DE3442756A1 - Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen - Google Patents
Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungenInfo
- Publication number
- DE3442756A1 DE3442756A1 DE19843442756 DE3442756A DE3442756A1 DE 3442756 A1 DE3442756 A1 DE 3442756A1 DE 19843442756 DE19843442756 DE 19843442756 DE 3442756 A DE3442756 A DE 3442756A DE 3442756 A1 DE3442756 A1 DE 3442756A1
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- hoechst
- units
- acid
- kalle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- 239000012876 carrier material Substances 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 229920003086 cellulose ether Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- FOCAUTSVDIKZOP-UHFFFAOYSA-N chloroacetic acid Chemical compound OC(=O)CCl FOCAUTSVDIKZOP-UHFFFAOYSA-N 0.000 description 1
- 229940106681 chloroacetic acid Drugs 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 150000002084 enol ethers Chemical class 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- SLGWESQGEUXWJQ-UHFFFAOYSA-N formaldehyde;phenol Chemical compound O=C.OC1=CC=CC=C1 SLGWESQGEUXWJQ-UHFFFAOYSA-N 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- MBAKFIZHTUAVJN-UHFFFAOYSA-I hexafluoroantimony(1-);hydron Chemical compound F.F[Sb](F)(F)(F)F MBAKFIZHTUAVJN-UHFFFAOYSA-I 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical group OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Chemical group 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VHWYCFISAQVCCP-UHFFFAOYSA-N methoxymethanol Chemical compound COCO VHWYCFISAQVCCP-UHFFFAOYSA-N 0.000 description 1
- 125000004492 methyl ester group Chemical group 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Chemical group OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 229910000403 monosodium phosphate Inorganic materials 0.000 description 1
- 235000019799 monosodium phosphate Nutrition 0.000 description 1
- PMHOLXNNEPPFNZ-UHFFFAOYSA-N n-(3-hydroxyphenyl)prop-2-enamide Chemical compound OC1=CC=CC(NC(=O)C=C)=C1 PMHOLXNNEPPFNZ-UHFFFAOYSA-N 0.000 description 1
- NYJIXHQKWMNVNP-UHFFFAOYSA-N n-(5-hydroxynaphthalen-1-yl)-2-methylprop-2-enamide Chemical compound C1=CC=C2C(NC(=O)C(=C)C)=CC=CC2=C1O NYJIXHQKWMNVNP-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002896 organic halogen compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920001289 polyvinyl ether Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000013138 pruning Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XTHPWXDJESJLNJ-UHFFFAOYSA-N sulfurochloridic acid Chemical compound OS(Cl)(=O)=O XTHPWXDJESJLNJ-UHFFFAOYSA-N 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Chemical group OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 229910000406 trisodium phosphate Inorganic materials 0.000 description 1
- 235000019801 trisodium phosphate Nutrition 0.000 description 1
- HGBOYTHUEUWSSQ-UHFFFAOYSA-N valeric aldehyde Natural products CCCCC=O HGBOYTHUEUWSSQ-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 239000008207 working material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Heat Sensitive Colour Forming Recording (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Materials For Photolithography (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19843442756 DE3442756A1 (de) | 1984-11-23 | 1984-11-23 | Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen |
| EP85114454A EP0184044B1 (de) | 1984-11-23 | 1985-11-14 | Strahlungsempfindliches Gemisch, daraus hergestelltes Aufzeichnungsmaterial und Verfahren zur Herstellung von wärmebeständigen Reliefaufzeichnungen |
| DE8585114454T DE3585213D1 (de) | 1984-11-23 | 1985-11-14 | Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen. |
| AT85114454T ATE71747T1 (de) | 1984-11-23 | 1985-11-14 | Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen. |
| JP60261633A JPS61143747A (ja) | 1984-11-23 | 1985-11-22 | 放射線過敏性組成物、該組成物を用いて製造された記録材料及び耐熱性記録レリ−フ像の製造方法 |
| US06/800,965 US4699867A (en) | 1984-11-23 | 1985-11-22 | Radiation-sensitive positive working composition and material with aqueous-alkaline soluble acryamide or methacryamide copolymer having hydroxyl or carboxyl groups |
| KR1019850008740A KR930010774B1 (ko) | 1984-11-23 | 1985-11-22 | 방사선감수성 조성물, 이를 사용하여 제조한 기록물질, 및 내열성 기록 양각 상의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19843442756 DE3442756A1 (de) | 1984-11-23 | 1984-11-23 | Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3442756A1 true DE3442756A1 (de) | 1986-05-28 |
Family
ID=6250989
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843442756 Withdrawn DE3442756A1 (de) | 1984-11-23 | 1984-11-23 | Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen |
| DE8585114454T Expired - Fee Related DE3585213D1 (de) | 1984-11-23 | 1985-11-14 | Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen. |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8585114454T Expired - Fee Related DE3585213D1 (de) | 1984-11-23 | 1985-11-14 | Strahlungsempfindliches gemisch, daraus hergestelltes aufzeichnungsmaterial und verfahren zur herstellung von waermebestaendigen reliefaufzeichnungen. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4699867A (https=) |
| EP (1) | EP0184044B1 (https=) |
| JP (1) | JPS61143747A (https=) |
| KR (1) | KR930010774B1 (https=) |
| AT (1) | ATE71747T1 (https=) |
| DE (2) | DE3442756A1 (https=) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3528929A1 (de) * | 1985-08-13 | 1987-02-26 | Hoechst Ag | Strahlungsempfindliches gemisch, dieses enthaltendes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefbildern |
| EP0265387B1 (en) * | 1986-10-23 | 1995-11-15 | Ciba-Geigy Ag | Method of forming images |
| DE3787369T2 (de) * | 1986-11-26 | 1994-01-13 | Konishiroku Photo Ind | Farbbilddarstellungsmaterial und verfahren zur herstellung gefärbter bilder. |
| JPH06105355B2 (ja) * | 1986-12-15 | 1994-12-21 | 富士写真フイルム株式会社 | 感光性組成物 |
| JPS63303343A (ja) * | 1987-06-03 | 1988-12-09 | Konica Corp | 感光性組成物及び感光性平版印刷版 |
| DE3852559T2 (de) * | 1987-03-12 | 1995-05-24 | Konishiroku Photo Ind | Lichtempfindliche positive Flachdruckplatte. |
| DE3711264A1 (de) * | 1987-04-03 | 1988-10-13 | Hoechst Ag | Lichtempfindliches gemisch und hieraus hergestelltes lichtempfindliches kopiermaterial |
| DE3716848A1 (de) * | 1987-05-20 | 1988-12-01 | Hoechst Ag | Verfahren zur bebilderung lichtempfindlichen materials |
| US5081001A (en) * | 1987-05-22 | 1992-01-14 | Hoechst Celanese Corporation | Blocked monomer and polymers therefrom for use as photoresists |
| US4962171A (en) * | 1987-05-22 | 1990-10-09 | Hoechst Celanese Corporation | Blocked monomer and polymers therefrom for use as photoresists |
| US4810613A (en) * | 1987-05-22 | 1989-03-07 | Hoechst Celanese Corporation | Blocked monomer and polymers therefrom for use as photoresists |
| US5177172A (en) * | 1988-05-31 | 1993-01-05 | Ocg Microelectronic Materials, Inc. | Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions |
| US5002851A (en) * | 1988-05-31 | 1991-03-26 | Olin Hunt Specialty Products, Inc. | Light sensitive composition with o-quinone diazide and phenolic novolak resin made using methylol substituted trihydroxybenzophenone as reactant |
| US5239122A (en) * | 1988-05-31 | 1993-08-24 | Ocg Microelectronic Materials, Inc. | Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions |
| US5254440A (en) * | 1988-05-31 | 1993-10-19 | Ocg Microelectronic Materials, Inc. | Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions and processes of forming resist images |
| DE3820699A1 (de) * | 1988-06-18 | 1989-12-21 | Hoechst Ag | Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
| DE3907953A1 (de) * | 1989-03-11 | 1990-09-13 | Hoechst Ag | Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung |
| DE3907954A1 (de) * | 1989-03-11 | 1990-09-13 | Hoechst Ag | Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial fuer hochenergetische strahlung |
| DE4002397A1 (de) * | 1990-01-27 | 1991-08-01 | Hoechst Ag | Strahlungsempfindliches gemisch und hieraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial |
| DE4003025A1 (de) * | 1990-02-02 | 1991-08-08 | Hoechst Ag | Strahlungsempfindliches gemisch, hiermit hergestelltes strahlungsempfindliches aufzeichnungsmaterial und verfahren zur herstellung von reliefaufzeichnungen |
| US5403695A (en) * | 1991-04-30 | 1995-04-04 | Kabushiki Kaisha Toshiba | Resist for forming patterns comprising an acid generating compound and a polymer having acid decomposable groups |
| KR950002875B1 (ko) * | 1991-07-08 | 1995-03-27 | 가부시키가이샤 도시바 | 감광성 조성물 |
| DE19507618A1 (de) * | 1995-03-04 | 1996-09-05 | Hoechst Ag | Polymere und diese enthaltendes lichtempfindliches Gemisch |
| DE19803564A1 (de) | 1998-01-30 | 1999-08-05 | Agfa Gevaert Ag | Polymere mit Einheiten aus N-substituiertem Maleimid und deren Verwendung in strahlungsempfindlichen Gemischen |
| JP4213366B2 (ja) | 2001-06-12 | 2009-01-21 | Azエレクトロニックマテリアルズ株式会社 | 厚膜レジストパターンの形成方法 |
| DE10204114A1 (de) * | 2002-02-01 | 2003-08-14 | Basf Coatings Ag | Thermisch und mit aktinischer Strahlung härtbares Stoffgemisch, Verfahren zu seiner Herstellung und seine Verwendung |
| US20080305435A1 (en) * | 2007-06-05 | 2008-12-11 | Yasushi Miyamoto | Method of making lithographic printing plate substrate and imageable elements |
| JP5417422B2 (ja) * | 2010-12-13 | 2014-02-12 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物 |
| CN102540726B (zh) * | 2010-12-13 | 2016-07-06 | 富士胶片株式会社 | 正型感光性树脂组成物、硬化膜及其形成方法、层间绝缘膜以及显示装置 |
| JP5593405B2 (ja) * | 2012-02-28 | 2014-09-24 | 富士フイルム株式会社 | 感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機el表示装置および液晶表示装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1447913C3 (de) * | 1964-10-15 | 1979-08-09 | Hoechst Ag, 6000 Frankfurt | Verfahren zur Herstellung von Druckformen |
| US3637384A (en) * | 1969-02-17 | 1972-01-25 | Gaf Corp | Positive-working diazo-oxide terpolymer photoresists |
| US3900325A (en) * | 1972-06-12 | 1975-08-19 | Shipley Co | Light sensitive quinone diazide composition with n-3-oxohydrocarbon substituted acrylamide |
| US4164421A (en) * | 1972-12-09 | 1979-08-14 | Fuji Photo Film Co., Ltd. | Photocurable composition containing an o-quinonodiazide for printing plate |
| DE3039926A1 (de) * | 1980-10-23 | 1982-05-27 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch, daraus hergestelltes lichtempfindliches kopiermaterial und verfahren zur herstellung einer druckform aus dem kopiermaterial |
| US4439516A (en) * | 1982-03-15 | 1984-03-27 | Shipley Company Inc. | High temperature positive diazo photoresist processing using polyvinyl phenol |
| DE3231147A1 (de) * | 1982-08-21 | 1984-02-23 | Basf Ag, 6700 Ludwigshafen | Positiv arbeitendes verfahren zur herstellung von reliefbildern oder resistmustern |
| DE3323343A1 (de) * | 1983-06-29 | 1985-01-10 | Hoechst Ag, 6230 Frankfurt | Lichtempfindliches gemisch und daraus hergestelltes kopiermaterial |
| DE3325022A1 (de) * | 1983-07-11 | 1985-01-24 | Hoechst Ag, 6230 Frankfurt | Verfahren zur herstellung negativer kopien mittels eines materials auf basis von 1,2-chinondiaziden |
| DE3329443A1 (de) * | 1983-08-16 | 1985-03-07 | Hoechst Ag, 6230 Frankfurt | Durch strahlung polymerisierbares gemisch und daraus hergestelltes kopiermaterial |
| DE3406927A1 (de) * | 1984-02-25 | 1985-08-29 | Hoechst Ag, 6230 Frankfurt | Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen |
-
1984
- 1984-11-23 DE DE19843442756 patent/DE3442756A1/de not_active Withdrawn
-
1985
- 1985-11-14 DE DE8585114454T patent/DE3585213D1/de not_active Expired - Fee Related
- 1985-11-14 AT AT85114454T patent/ATE71747T1/de not_active IP Right Cessation
- 1985-11-14 EP EP85114454A patent/EP0184044B1/de not_active Expired - Lifetime
- 1985-11-22 KR KR1019850008740A patent/KR930010774B1/ko not_active Expired - Fee Related
- 1985-11-22 JP JP60261633A patent/JPS61143747A/ja active Granted
- 1985-11-22 US US06/800,965 patent/US4699867A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US4699867A (en) | 1987-10-13 |
| EP0184044B1 (de) | 1992-01-15 |
| DE3585213D1 (de) | 1992-02-27 |
| KR860004334A (ko) | 1986-06-20 |
| JPH0588834B2 (https=) | 1993-12-24 |
| JPS61143747A (ja) | 1986-07-01 |
| EP0184044A3 (en) | 1988-01-13 |
| ATE71747T1 (de) | 1992-02-15 |
| EP0184044A2 (de) | 1986-06-11 |
| KR930010774B1 (ko) | 1993-11-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |