KR920704545A - 박막 el 소자 - Google Patents

박막 el 소자

Info

Publication number
KR920704545A
KR920704545A KR1019920700439A KR920700439A KR920704545A KR 920704545 A KR920704545 A KR 920704545A KR 1019920700439 A KR1019920700439 A KR 1019920700439A KR 920700439 A KR920700439 A KR 920700439A KR 920704545 A KR920704545 A KR 920704545A
Authority
KR
South Korea
Prior art keywords
light emitting
thin film
compound
dielectric
base material
Prior art date
Application number
KR1019920700439A
Other languages
English (en)
Other versions
KR970002016B1 (ko
Inventor
다가시 니레
Original Assignee
가타다 데츄야
가부시기가이샤 고마쯔 세이샤쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가타다 데츄야, 가부시기가이샤 고마쯔 세이샤쿠쇼 filed Critical 가타다 데츄야
Publication of KR920704545A publication Critical patent/KR920704545A/ko
Application granted granted Critical
Publication of KR970002016B1 publication Critical patent/KR970002016B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7743—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing terbium
    • C09K11/7744—Chalcogenides
    • C09K11/7745—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

내용 없음.

Description

박막 EL 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 본 발명의 박막 EL 소자와 일 구체예의 구조를 나타낸 개략단면도,
제7도는 본 발명의 구체예의 발광중심 불순물의 형태를 나타낸 모식도,
제8도는 본 발명의 구체예의 특성과 비교예의 특성을 비교하는 휘도-전압 특성선도,
제9도는 본 발명의 구체예와 비교예를 비교한 휘도의 시간 경과에 따른 변화 상태를 나타낸 선도.

Claims (4)

  1. 투명 기판상에 투명 도전막과, 제1 유전제와, 발광층과, 그리고 제2유전체가 순차 적층되고, 상기 투명 도전막과 상기 제2 유전체에 각각 전극이 설치된 2중 유전체 구조의 박박 EL 소자에 있어서, 상기 발광층이 발광모재/발광모재 : 발광중심물의 초격자 구조로 형성됨을 특징으로 하는 박막 EL 소자.
  2. 제1항에 있어서, 상기 발광모재가 II-VI족 화합물/III-VI족 화합물의 초격자 구조로 됨을 특징으로 하는 박막 EL 소자.
  3. 제1항에 있어서, 상기 발광중심 불순물이 III-VI족 화합물에 함유시킨 3가의 천이 금속 혹은 3가의 희토류 원소로 됨을 특징으로 하는 박막 EL 소자.
  4. 제1항에 있어서, 상기 발광중심 불순물이, II-VI족 화합물에 함유시킨 2가의 천이금속 혹은 2가의 희토류원소, 및 III-VI족 화합물에 함유시킨 3가의 천이금속 혹은 3가의 희토류 금속임을 특징으로 하는 박막 EL 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920700439A 1989-09-04 1989-09-04 박막 el 소자 KR970002016B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1989/000909 WO1991003918A1 (en) 1989-09-04 1989-09-04 Thin-film el element

Publications (2)

Publication Number Publication Date
KR920704545A true KR920704545A (ko) 1992-12-19
KR970002016B1 KR970002016B1 (ko) 1997-02-20

Family

ID=13958844

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920700439A KR970002016B1 (ko) 1989-09-04 1989-09-04 박막 el 소자

Country Status (5)

Country Link
US (1) US5311035A (ko)
EP (1) EP0493592A4 (ko)
KR (1) KR970002016B1 (ko)
FI (1) FI920948A0 (ko)
WO (1) WO1991003918A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5641582A (en) * 1992-04-16 1997-06-24 Komatsu Ltd. Thin-film EL element
US5700592A (en) * 1995-12-13 1997-12-23 Hewlett-Pacard Company Electroluminescent materials for edge emitters
JP3792390B2 (ja) * 1998-02-24 2006-07-05 富士通株式会社 半導体装置及びその製造方法
KR100377716B1 (ko) * 1998-02-25 2003-03-26 인터내셔널 비지네스 머신즈 코포레이션 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법
US6531414B1 (en) * 1999-05-05 2003-03-11 The United States Of America As Represented By The National Security Agency Method of oxidizing strain-compensated superlattice of group III-V semiconductor
JP5604147B2 (ja) * 2010-03-25 2014-10-08 パナソニック株式会社 トランジスタ及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181485A (ja) * 1983-03-31 1984-10-15 柊元　宏 発光素子
EP0133342B1 (en) * 1983-06-24 1989-11-29 Nec Corporation A superlattice type semiconductor structure having a high carrier density
US4751427A (en) * 1984-03-12 1988-06-14 Planar Systems, Inc. Thin-film electroluminescent device
JPH077849B2 (ja) * 1984-12-17 1995-01-30 株式会社東芝 半導体発光素子
JPS61158691A (ja) * 1984-12-28 1986-07-18 日本電気株式会社 薄膜ｅｌ素子
JPS61268079A (ja) * 1985-05-20 1986-11-27 Stanley Electric Co Ltd 青色発光素子
JPS62224985A (ja) * 1986-03-27 1987-10-02 Seiko Epson Corp 半導体発光素子
JPH0793196B2 (ja) * 1987-03-25 1995-10-09 株式会社日立製作所 Ｅｌ素子およびその製造法
JP2547340B2 (ja) * 1988-03-22 1996-10-23 株式会社小松製作所 薄膜ｅｌ素子
JPH0240891A (ja) * 1988-07-29 1990-02-09 Toshiba Corp 薄膜型エレクトロルミネッセンス表示素子
JPH02244031A (ja) * 1988-12-27 1990-09-28 Toshiba Corp 薄膜型エレクトロルミネッセンス表示素子

Also Published As

Publication number Publication date
EP0493592A4 (en) 1993-09-01
US5311035A (en) 1994-05-10
WO1991003918A1 (en) 1991-03-21
FI920948A0 (fi) 1992-03-03
KR970002016B1 (ko) 1997-02-20
EP0493592A1 (en) 1992-07-08

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