FI920948A0 - Tunnfilm-elektroluminescenselement. - Google Patents

Tunnfilm-elektroluminescenselement.

Info

Publication number
FI920948A0
FI920948A0 FI920948A FI920948A FI920948A0 FI 920948 A0 FI920948 A0 FI 920948A0 FI 920948 A FI920948 A FI 920948A FI 920948 A FI920948 A FI 920948A FI 920948 A0 FI920948 A0 FI 920948A0
Authority
FI
Finland
Prior art keywords
tunnfilm
elektroluminescenselement
Prior art date
Application number
FI920948A
Other languages
English (en)
Inventor
Takashi Nire
Original Assignee
Komatsu Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Mfg Co Ltd filed Critical Komatsu Mfg Co Ltd
Publication of FI920948A0 publication Critical patent/FI920948A0/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7743—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing terbium
    • C09K11/7744—Chalcogenides
    • C09K11/7745—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
FI920948A 1989-09-04 1992-03-03 Tunnfilm-elektroluminescenselement. FI920948A0 (fi)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1989/000909 WO1991003918A1 (en) 1989-09-04 1989-09-04 Thin-film el element

Publications (1)

Publication Number Publication Date
FI920948A0 true FI920948A0 (fi) 1992-03-03

Family

ID=13958844

Family Applications (1)

Application Number Title Priority Date Filing Date
FI920948A FI920948A0 (fi) 1989-09-04 1992-03-03 Tunnfilm-elektroluminescenselement.

Country Status (5)

Country Link
US (1) US5311035A (fi)
EP (1) EP0493592A4 (fi)
KR (1) KR970002016B1 (fi)
FI (1) FI920948A0 (fi)
WO (1) WO1991003918A1 (fi)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993021744A1 (en) * 1992-04-16 1993-10-28 Kabushiki Kaisha Komatsu Seisakusho Thin-film el element
US5700592A (en) * 1995-12-13 1997-12-23 Hewlett-Pacard Company Electroluminescent materials for edge emitters
JP3792390B2 (ja) * 1998-02-24 2006-07-05 富士通株式会社 半導体装置及びその製造方法
KR100377716B1 (ko) * 1998-02-25 2003-03-26 인터내셔널 비지네스 머신즈 코포레이션 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법
US6531414B1 (en) * 1999-05-05 2003-03-11 The United States Of America As Represented By The National Security Agency Method of oxidizing strain-compensated superlattice of group III-V semiconductor
JP5604147B2 (ja) * 2010-03-25 2014-10-08 パナソニック株式会社 トランジスタ及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59181485A (ja) * 1983-03-31 1984-10-15 柊元　宏 発光素子
US4695857A (en) * 1983-06-24 1987-09-22 Nec Corporation Superlattice semiconductor having high carrier density
US4751427A (en) * 1984-03-12 1988-06-14 Planar Systems, Inc. Thin-film electroluminescent device
JPH077849B2 (ja) * 1984-12-17 1995-01-30 株式会社東芝 半導体発光素子
JPS61158691A (ja) * 1984-12-28 1986-07-18 日本電気株式会社 薄膜ｅｌ素子
JPS61268079A (ja) * 1985-05-20 1986-11-27 Stanley Electric Co Ltd 青色発光素子
JPS62224985A (ja) * 1986-03-27 1987-10-02 Seiko Epson Corp 半導体発光素子
JPH0793196B2 (ja) * 1987-03-25 1995-10-09 株式会社日立製作所 Ｅｌ素子およびその製造法
JP2547340B2 (ja) * 1988-03-22 1996-10-23 株式会社小松製作所 薄膜ｅｌ素子
JPH0240891A (ja) * 1988-07-29 1990-02-09 Toshiba Corp 薄膜型エレクトロルミネッセンス表示素子
JPH02244031A (ja) * 1988-12-27 1990-09-28 Toshiba Corp 薄膜型エレクトロルミネッセンス表示素子

Also Published As

Publication number Publication date
KR920704545A (ko) 1992-12-19
EP0493592A1 (en) 1992-07-08
EP0493592A4 (en) 1993-09-01
US5311035A (en) 1994-05-10
KR970002016B1 (ko) 1997-02-20
WO1991003918A1 (en) 1991-03-21

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Legal Events

Date Code Title Description
FD Application lapsed