KR920018847A - Bi-Sr-Ca-Cu-O계 초전도 박막과 그의 제조방법 - Google Patents

Bi-Sr-Ca-Cu-O계 초전도 박막과 그의 제조방법 Download PDF

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KR920018847A
KR920018847A KR1019920004150A KR920004150A KR920018847A KR 920018847 A KR920018847 A KR 920018847A KR 1019920004150 A KR1019920004150 A KR 1019920004150A KR 920004150 A KR920004150 A KR 920004150A KR 920018847 A KR920018847 A KR 920018847A
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thin film
superconducting thin
unit cells
atom
based superconducting
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KR960000947B1 (ko
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세이겐 오따니
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세끼자와 요시
후지쓰 가부시끼가이샤
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Abstract

내용 없음

Description

Bi－Sr－Ca－Cu－O계 초전도 박막과 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 방법에 의한 원자층 제어상태하에서 기판에 형성된 Bi－Sr－Ca－Cu－O계 초전도 박막의 개략 단면도.
제3도는 Bi－Sr－Ca－Cu－O계 초전도 박막의 임계전류밀도와 자기장세기(megnetic field intensity)의 관계를 도시한 그래프.

Claims (4)

  1. 두 개의 반쪽 단위 셀(helf－unit cell)들을 페로브스키트(Perovskite) 구조층을 형성하고, 상기 반쪽 단위 셀들 사이에 놓여있는 스트론튬(Sr)과 비스무스(Bi)는 원자층 제어 레벨 능력을 갖는 MBE공정 또는 MO－MBE공정을 사용하여 산화 작용없이 각각 석출되어짐을 특징으로 하는 Bi－Sr－Ca－Cu－O계 초전도 박막의 제조방법.
  2. 제1항에 있어서, 상기 반쪽 단위 셀들의 CuO원자층 사이에는 하나의 실제금속스트론튬(Sr)원자층과 두개의 실제금속 비스무스(Bi)원자층이 놓여짐을 특징으로 하는 Bi－Sr－Ca－Cu－O계 초전도 박막의 제조방법.
  3. 두 개의 반쪽 단위 셀들은 페로브스키트 구조층을 형성하고, 상기 반쪽단위 셀들의 CuO원자층 사이에는 하나의 실제금속스크론튬(Sr)원자층과 두개의 실제금속 비스무스(Bi)원자층이 놓여짐을 특징으로 하는 Bi－Sr－Ca－Cu－O계 초전도 박막.
  4. 제3항에 있어서, 상기 초전도 박막은 Bi2SR2CaCu2Ox(2－2－1－2)로 이루어짐을 특징으로 하는 Bi－Sr－Ca－Cu－O계 초전도 박막.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920004150A 1991-03-15 1992-03-13 Bi-Sr-Ca-Cu-O계 초전도 박막과 그의 제조방법 KR960000947B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-51049 1991-03-15
JP3051049A JPH04285012A (ja) 1991-03-15 1991-03-15 酸化物超伝導体薄膜の形成方法

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KR920018847A true KR920018847A (ko) 1992-10-22
KR960000947B1 KR960000947B1 (ko) 1996-01-15

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US (1) US5300484A (ko)
EP (1) EP0505112B1 (ko)
JP (1) JPH04285012A (ko)
KR (1) KR960000947B1 (ko)
DE (1) DE69201384D1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0461592B1 (en) * 1990-06-11 1996-09-04 Mitsubishi Chemical Corporation Thin film Josephson device
JP3435966B2 (ja) 1996-03-13 2003-08-11 株式会社日立製作所 強誘電体素子とその製造方法
JP2939530B2 (ja) * 1996-11-29 1999-08-25 工業技術院長 ビスマスを構成元素に含む多元系酸化物薄膜の結晶成長法
JP2958455B1 (ja) * 1998-03-27 1999-10-06 工業技術院長 酸化物薄膜の結晶成長方法
JP5100313B2 (ja) * 2007-10-31 2012-12-19 株式会社東芝 酸化ランタン化合物の製造方法

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EP0292958B1 (en) * 1987-05-26 1993-12-29 Sumitomo Electric Industries Limited Method for preparing thin film of compound oxide superconductor
CA1313335C (en) * 1987-08-24 1993-02-02 Keizo Harada Process for preparing a thin film of superconducting compound oxide

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KR960000947B1 (ko) 1996-01-15
EP0505112A1 (en) 1992-09-23
EP0505112B1 (en) 1995-02-15
US5300484A (en) 1994-04-05
JPH04285012A (ja) 1992-10-09
DE69201384D1 (de) 1995-03-23

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