KR890012376A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR890012376A
KR890012376A KR1019890000486A KR890000486A KR890012376A KR 890012376 A KR890012376 A KR 890012376A KR 1019890000486 A KR1019890000486 A KR 1019890000486A KR 890000486 A KR890000486 A KR 890000486A KR 890012376 A KR890012376 A KR 890012376A
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KR
South Korea
Prior art keywords
ceramic composition
semiconductor device
interconnect
superconducting
transition point
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Application number
KR1019890000486A
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English (en)
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KR910009358B1 (en
Inventor
준지 사꾸라이
Original Assignee
야마모도 다꾸마
후지쓰 가부시끼가이샤
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Application filed by 야마모도 다꾸마, 후지쓰 가부시끼가이샤 filed Critical 야마모도 다꾸마
Publication of KR890012376A publication Critical patent/KR890012376A/ko
Application granted granted Critical
Publication of KR910009358B1 publication Critical patent/KR910009358B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53285—Conductive materials containing superconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 원리를 설명하는 사시도.
제3A도 및 3B도는 본 발명을 설명하는 사시도.
제4도는 전기저항과 초전도물질의 온도사이의 관계를 설명하는 그라프.

Claims (9)

  1. 세라믹 초전도물질로 구성되는 상호접속부(13)와 상기 상호접속부(13)사이에 위치하며 상기 상호접속부의 주조성물과 동일한 주조성물을 가지는 부분(14)으로 구성되며, 상기 상호접속부(13)가 상기 부분(14)에 의하여 전기 절연되는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 상호접속부(13)가 초전도체이며, 상기 상호접속부(13)의 초전도물질의 초전도전이온도(Tc)가 상기 부분 (14)의 물질이 전이온도 보다 더 높은 것을 특징으로 하는 반도체 장치.
  3. 제1항에 있어서, 상기 상호접속부(13)와 상기 부분(14)은 M-L-Cu-O 세라믹 조성물을 갖는 박막을 형성함으로써 얻어지며, 여기서 M은 알칼리토원소와 알칼리토원소의 조합이며, L은 회토류원소와 회토류원소의 조합이며 Cu는 구리이고, O는 산소이며, 및 원소(M, L, Cu)중 어느 하나가 빠지며 빠진 1원소 또는 원소들이 상호접속부(13)에만 이식되는 것을 특징으로 하는 반도체 장치.
  4. 제3항에 있어서, 상기 M-L-Cu-O 세라믹 조성물은 Y1Ba2Cu3O7-X이며, 및 원소 (M, L, Cu)중 어느 하나가 생략된 상기 세라믹 조성물은 B-Cu-O인 어느 것을 특징으로 하는 반도체 장치.
  5. 제2항 내지 4항중 어느 한 항에 있어서, 상기 Y1Ba2Cu3O7-X의 상기 초전도전이점(Tc)이 약 90K(R=O)이며, 및 상기 Ba-Cu-O의 상기 초전도전이점(Tc)이 약 5K(R=O)인 것을 특징으로 하는 반도체 장치.
  6. 제3항에 있어서, 상기 M-L-Cu-O 세라믹 조성물은 La·Ba·Sr·Cu·O3이고, 및 원소 (M, L, Cu)중 어느 하나가 생략되는 상기 세라믹 조성물이 La·Ba·Sr·O3인 것을 특징으로 하는 반도체 장치.
  7. 제2,3 및 6항중 어느 한 항에 있어서, 상기 La·Ba·Sr·Cu·O3의 상기 초전도전이점(Tc)이 약 50K(R=O)이고, 상기 초전도 전이점(Tc)이 약 6K(R=O)인 것을 특징으로 하는 반도체 장치.
  8. 제3항에 있어서, 상기 M-L-Cu-O 세라믹 조성물은 Bi2Ba2Ca2Cu3O10-X이고, 원소 (M, L, Cu) 중 어느 하나가 생략되는 상기 세라믹 조성물이 Ba·Ca·Cu·Cx인 것을 특징으로 하는 반도체 장치.
  9. 제2, 제3및 8항중 어느 한 항에 있어서, Bi2Ba2Ca2Cu3O10-X의 상기 초전도전이점(Tc)이 약 110K(R=O)이며 Ba·Ca·Cu·Ox의 상기 초전도전이점(Tc)이 4.2K(R=O)인 것을 특징으로 하는 반도체 장치.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8900486A 1988-01-18 1989-01-18 Semiconductor devices KR910009358B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-6830 1988-01-18
JP63006830A JPH01183138A (ja) 1988-01-18 1988-01-18 半導体装置

Publications (2)

Publication Number Publication Date
KR890012376A true KR890012376A (ko) 1989-08-26
KR910009358B1 KR910009358B1 (en) 1991-11-12

Family

ID=11649141

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8900486A KR910009358B1 (en) 1988-01-18 1989-01-18 Semiconductor devices

Country Status (3)

Country Link
EP (1) EP0325408A3 (ko)
JP (1) JPH01183138A (ko)
KR (1) KR910009358B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0355889A (ja) * 1989-07-25 1991-03-11 Furukawa Electric Co Ltd:The 超電導多層回路の製造方法
JPH0371147U (ko) * 1989-11-13 1991-07-18
US5012319A (en) * 1990-05-14 1991-04-30 At&T Bell Laboratories Integrated electronic assembly comprising a transmission line
US5420101A (en) * 1991-06-24 1995-05-30 Forschungszentrum Julich Gmbh Structures super conductor tracks and process for making them
US6156513A (en) * 1995-09-15 2000-12-05 Ramareddy V. Guntaka Oligmers which inhibit expression of collagen genes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0648733B2 (ja) * 1984-01-25 1994-06-22 株式会社日立製作所 極低温用半導体装置
KR950010206B1 (ko) * 1987-03-09 1995-09-11 가부시끼가이샤 한도다이 에네르기 겐꾸쇼 전자 장치 및 그 제조 방법

Also Published As

Publication number Publication date
EP0325408A2 (en) 1989-07-26
JPH01183138A (ja) 1989-07-20
EP0325408A3 (en) 1989-09-06
KR910009358B1 (en) 1991-11-12

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