KR920012894A - 바이채널 라디에이션 검출방법 - Google Patents
바이채널 라디에이션 검출방법 Download PDFInfo
- Publication number
- KR920012894A KR920012894A KR1019910017893A KR910017893A KR920012894A KR 920012894 A KR920012894 A KR 920012894A KR 1019910017893 A KR1019910017893 A KR 1019910017893A KR 910017893 A KR910017893 A KR 910017893A KR 920012894 A KR920012894 A KR 920012894A
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- South Korea
- Prior art keywords
- master
- objects
- pyrometer
- distribution
- determining
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- 230000005855 radiation Effects 0.000 title claims description 6
- 238000001514 detection method Methods 0.000 title claims 2
- 238000000034 method Methods 0.000 claims description 17
- 235000012431 wafers Nutrition 0.000 claims description 3
- 230000002285 radioactive effect Effects 0.000 claims 8
- 238000000576 coating method Methods 0.000 claims 1
- 230000004907 flux Effects 0.000 claims 1
- 235000019692 hotdogs Nutrition 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000007943 implant Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/60—Radiation pyrometry, e.g. infrared or optical thermometry using determination of colour temperature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Radiation Pyrometers (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 처리를 나타내는 흐름도, 제3도는 본 발명에 따라 결정된 흐측(back side) 방사성을 갖는 1군의 웨이퍼에 대한 한쌍의 채널로 부터의 차분온도 신호들의 함수로서 일채널에 따른 방사성곡선을 나타내는 그래프; 제4도는 제1도의 시스템 작동에서 고온도계 신호들을 나타내는 그래프; 제5도는 본 발명에 따른 산화처리 결과를 종래처리에 따른 결과와 비교하여 나타내는 그래프; 및 제6도는 각각 발명의 방법 없이 및 본 발명의 방법에 의한 임플랜.
Claims (9)
- 처리실내의 대상으로부터 처리실의 벽을 통해 받은 라이에이션에 대해 다른 웨이브밴드에서 작동하는 복수개의 고온도계(pyrometers)를 사용하여 유사한 대상들의 분포로 부터 선택된 대상의 처리실내의 온도를 비파괴 비접촉식으로 정확하게 결정하는 방법에 있어서, 적어도 한 기준온도에서 처리실내 기준대상에 대한 각 고온도계의 반응을 거의 동화하는 단계; 마스터 대상을 선택하는 단계; 동화된 고온도계 각각의 반응으로 부터 기준온도에서 처리실 내 마스터 대상의 마스터 방사성들을 결정하는 단계; 상기 분포로 부터 선택된 일련의 대상들 각각의 처리실 내로 부터 기준온도에서 라디에이션에 반응하는 등화된 고온도계로 부터의 방사성 극단값들을 형성하는 단계; 마스터 방사성들에 따라 등화된 고온도계들의 반응으로 부터 상기 분포로 부터 선택된 상기 일련의 대상들 각각에 대해 결정된 신호치를 저장하는 단계; 저장된 신호 레벨들과 극단값들을 제공하는 대상들의 방사성 값들 사이에서 적어도 하나의 상관 관계를 결정하는 단계; 배치(batch)로 부터 선택된 다른 대상을 처리실내 기준온도로 상승시키는 단계; 상기 상관에 따라 등화된 고온도게들의 반응으로부터 상기 다른 대상의 방사성 값들을 계산 하는 단계; 및 상기 다른 대상의 계산된 방사성 값들에 따라 처리실내 상기 다른 대상의 방사성 값들을 변경하는 단계들로 구성됨을 특징으로 하는 방법.
- 제1항에 있어서, 마스터 방사성들을 결정하는 단계어서, 마스터 방사성들의 결정은 선택된 범위에 걸쳐 복수의 기준온도에서 행해짐을 특징으로 하는 방법.
- 제1항에 있어서, 형성하는 단계에서, 방사성 값들은 상기 분포내 모든 대상에 대해 형성됨을 특징으로 하는 방법.
- 제1항에 있어서, 대상들이 다양한 표면 방사성의 유사한 흐측 코오팅들을 갖는 반도체 웨이퍼들이고, 고온도계는 처리실내 웨이퍼의 후측으로 부터 받은 라디에이션에 작동함을 특징으로 하는 방법.
- 제1항에 있어서, 적어도 하나의 상관관계를 결정하는 단계에서, 최적상관이 결정됨을 특징으로 하는 방법.
- 제1항에 있어서, 선택하는 단계에서, 마스터 대상은 유사한 대상들의 분포로 부터 선택됨을 특징으로 하는 방법.
- 제1항에 있어서, 처리실벽으로 부터의 라디에이션 검출에 반응하여 각 고온게의 반응을 보정하는 단계를 포함함을 특징으로 하는 방법.
- 제1항에 있어서, 대상들은 상기 기준 온도와 다른 온도들에서 처리실에서 열적으로 처리됨을 특징으로 하는 방법.
- 제1항에 있어서, 다른 웨이브밴드에서 작동하는 2개 이상의 고온도계 채널들을 포함하고, 그 각각은 한 대상으로 받은 방사 플럭스를 나타내고, 대상의 방사성의 표시를 산출하도록 논리조합에 따라 처리되는 신호값들을 제공함을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/624,206 US5114242A (en) | 1990-12-07 | 1990-12-07 | Bichannel radiation detection method |
US624,206 | 1990-12-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR920012894A true KR920012894A (ko) | 1992-07-28 |
Family
ID=24501099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910017893A KR920012894A (ko) | 1990-12-07 | 1991-10-11 | 바이채널 라디에이션 검출방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5114242A (ko) |
EP (1) | EP0490290B1 (ko) |
JP (1) | JPH05196505A (ko) |
KR (1) | KR920012894A (ko) |
DE (1) | DE69112184T2 (ko) |
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US4764026A (en) * | 1986-07-07 | 1988-08-16 | Varian Associates, Inc. | Semiconductor wafer temperature measuring device and method |
US4817020A (en) * | 1987-06-22 | 1989-03-28 | General Electric Company | Cooling rate determination apparatus for laser material processing |
US4854727A (en) * | 1987-10-26 | 1989-08-08 | Ag Processing Technologies, Inc. | Emissivity calibration apparatus and method |
US4881823A (en) * | 1988-03-29 | 1989-11-21 | Purdue Research Foundation | Radiation thermometry |
GB2230607B (en) * | 1989-04-05 | 1992-10-28 | Plessey Co Plc | Temperature-controlled bodies |
US4969748A (en) * | 1989-04-13 | 1990-11-13 | Peak Systems, Inc. | Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing |
US4984902A (en) * | 1989-04-13 | 1991-01-15 | Peak Systems, Inc. | Apparatus and method for compensating for errors in temperature measurement of semiconductor wafers during rapid thermal processing |
-
1990
- 1990-12-07 US US07/624,206 patent/US5114242A/en not_active Expired - Lifetime
-
1991
- 1991-10-11 KR KR1019910017893A patent/KR920012894A/ko active IP Right Grant
- 1991-12-06 DE DE69112184T patent/DE69112184T2/de not_active Expired - Fee Related
- 1991-12-06 EP EP91120967A patent/EP0490290B1/en not_active Expired - Lifetime
- 1991-12-06 JP JP3323080A patent/JPH05196505A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH05196505A (ja) | 1993-08-06 |
EP0490290A1 (en) | 1992-06-17 |
EP0490290B1 (en) | 1995-08-16 |
DE69112184T2 (de) | 1996-04-18 |
US5114242A (en) | 1992-05-19 |
DE69112184D1 (de) | 1995-09-21 |
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