KR920009705A - 초고순도 강유전체 박막 - Google Patents

초고순도 강유전체 박막 Download PDF

Info

Publication number
KR920009705A
KR920009705A KR1019910020427A KR910020427A KR920009705A KR 920009705 A KR920009705 A KR 920009705A KR 1019910020427 A KR1019910020427 A KR 1019910020427A KR 910020427 A KR910020427 A KR 910020427A KR 920009705 A KR920009705 A KR 920009705A
Authority
KR
South Korea
Prior art keywords
thin film
general formula
ferroelectric thin
less
mixed solution
Prior art date
Application number
KR1019910020427A
Other languages
English (en)
Other versions
KR100220345B1 (ko
Inventor
카쯔미 오기
노부유키 소야마
Original Assignee
후지무라 마사야
미쯔비시 마테리알 카부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지무라 마사야, 미쯔비시 마테리알 카부시키가이샤 filed Critical 후지무라 마사야
Publication of KR920009705A publication Critical patent/KR920009705A/ko
Application granted granted Critical
Publication of KR100220345B1 publication Critical patent/KR100220345B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/409—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005—Epitaxial layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Insulating Materials (AREA)
  • Semiconductor Memories (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Chemically Coating (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음.

Description

초고순도 강유전체 박막
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 티탄산지르콘산납(PZT)박막의 알칼리금속불순물량과 누설전류밀도 사이의 관계를 나타내는 그래프.

Claims (4)

  1. 일반식
    pb1－xLax(ZryTi1－x)1－x/4O3
    (식중 x, y는, 0, 1또는 1보다 작은 소수)으로 표시되는 Pb함유 강유전체로 이루어지며, 그 유전체에 함유되는 알칼리금속불순물의 함유량이 1ppm 이하인 것을 특징으로 하는 강유전체박막.
  2. 일반식
    pb1－xLax(ZryTi1－x)1－x/4O3
    (식중 x, y는, 0, 1또는 1보다 작은 소수)으로 표시되는 Pb함유 강유전체로 이루어지며, 그 유전체에 함유되는 알칼리금속불순물의 함유량이 0.1ppm 이하이고, U, Th의 합계함유량이 10ppb 이하인 것을 특징으로 하는 강유전체박막.
  3. 제1항 또는 제2항에 있어서, Pb 함유강유전체가 티탄산납(상기한 일반식에서 x=y=o), 티탄산지르콘산납(상기한 일반식에서 x=0, 0<y<1), 또는 타탄함유티탄산지르콘산납(상기한 일반식에서 x>0, y<1)인 것을 특징으로 하는 강유전체박막.
  4. 제1항에 있어서, 납, 란탄, 티탄, 지르코늄의 금속유기화합물을 유기용매에 용해하는 것에 의해서, 이들 금속의 각각에 대해 산소를 개재하여 유기기와 결합한 금속화합물의 혼합용액을 형성하고, 이 혼합용액에 안정화제를 첨가한 후에, 이 혼합용액에 소정량의 물을 가하여 부분가수분해시켜서, 혼합용액중에 금속－산소－금속결합을 형성한 전구체용액을 사용하여 형성된 것을 특징으로 하는 강유전체박막.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910020427A 1990-11-16 1991-11-16 초고순도 강유전체박막 및 그 제조방법 KR100220345B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-310890 1990-11-16
JP2310890A JP2891304B2 (ja) 1990-11-16 1990-11-16 超高純度強誘電体薄膜

Publications (2)

Publication Number Publication Date
KR920009705A true KR920009705A (ko) 1992-06-25
KR100220345B1 KR100220345B1 (ko) 1999-09-15

Family

ID=18010616

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910020427A KR100220345B1 (ko) 1990-11-16 1991-11-16 초고순도 강유전체박막 및 그 제조방법

Country Status (5)

Country Link
US (1) US5244742A (ko)
EP (1) EP0485907B1 (ko)
JP (1) JP2891304B2 (ko)
KR (1) KR100220345B1 (ko)
DE (1) DE69116106T2 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5723361A (en) * 1991-12-13 1998-03-03 Symetrix Corporation Thin films of ABO3 with excess A-site and B-site modifiers and method of fabricating integrated circuits with same
JPH0773732A (ja) * 1993-06-23 1995-03-17 Sharp Corp 誘電体薄膜素子及びその製造方法
KR0147245B1 (ko) * 1993-12-01 1998-09-15 모리시타 요이찌 강유전체박막 및 그 제조방법
JP3007795B2 (ja) * 1994-06-16 2000-02-07 シャープ株式会社 複合金属酸化物誘電体薄膜の製造方法
CN1083161C (zh) * 1994-07-05 2002-04-17 西梅特里克司有限公司 具有过量的a－位及b－位调节剂的abo3薄膜及其制造方法
US5897912A (en) * 1997-09-03 1999-04-27 Ferro Corporation Method of making conductive electrodes for use in multilayer ceramic capacitors or inductors using organometallic ink
US6203608B1 (en) * 1998-04-15 2001-03-20 Ramtron International Corporation Ferroelectric thin films and solutions: compositions
DE19908213B4 (de) * 1998-07-27 2005-03-10 Mitsubishi Heavy Ind Ltd Basisrohr für eine Brennstoffzelle
US6623865B1 (en) 2000-03-04 2003-09-23 Energenius, Inc. Lead zirconate titanate dielectric thin film composites on metallic foils
JP2004107181A (ja) * 2002-09-20 2004-04-08 Canon Inc 圧電体素子形成用組成物、圧電体膜の製造方法、圧電体素子及びインクジェット記録ヘッド
US20040175585A1 (en) * 2003-03-05 2004-09-09 Qin Zou Barium strontium titanate containing multilayer structures on metal foils
JP4851108B2 (ja) * 2005-03-24 2012-01-11 富士フイルム株式会社 複合ペロブスカイト型化合物の膜の成膜方法、並びに、それを用いた液体吐出ヘッドの製造方法
JP6597430B2 (ja) * 2015-03-26 2019-10-30 三菱マテリアル株式会社 強誘電体膜及びその製造方法
KR102242304B1 (ko) * 2015-03-26 2021-04-19 미쓰비시 마테리알 가부시키가이샤 강유전체막 및 그 제조 방법
JP2020025069A (ja) * 2018-03-19 2020-02-13 株式会社リコー 酸化物形成用塗布液、酸化物膜の製造方法、及び電界効果型トランジスタの製造方法
TWI702186B (zh) * 2018-03-19 2020-08-21 日商理光股份有限公司 形成氧化物用的塗佈液、製造氧化物薄膜的方法及製造場效電晶體的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303133A (en) * 1964-02-06 1967-02-07 Honeywell Inc Process for producing dense ceramic of lead zirconate-titanate
US3816750A (en) * 1971-06-04 1974-06-11 Honeywell Inc Pyroelectric detector
JPS4838313A (ko) * 1971-09-18 1973-06-06
US3917780A (en) * 1973-08-09 1975-11-04 Us Air Force Preparation of lead lanthanum zirconate titanate bodies
US3997690A (en) * 1975-05-27 1976-12-14 Honeywell Inc. Method of adjusting refractive index of PLZT optical coating on optical element
JPS5941930A (ja) * 1982-08-31 1984-03-08 Mitsubishi Electric Corp 高周波ノイズ除去回路
JPS6353264A (ja) * 1986-08-25 1988-03-07 Sumitomo Electric Ind Ltd 強誘電体薄膜の製造方法
JPH0688790B2 (ja) * 1986-11-07 1994-11-09 三菱マテリアル株式会社 磁器組成物の製造方法
US4963390A (en) * 1988-10-05 1990-10-16 The Aerospace Corporation Metallo-organic solution deposition (MOSD) of transparent, crystalline ferroelectric films

Also Published As

Publication number Publication date
KR100220345B1 (ko) 1999-09-15
JPH04183872A (ja) 1992-06-30
DE69116106D1 (de) 1996-02-15
JP2891304B2 (ja) 1999-05-17
EP0485907B1 (en) 1996-01-03
EP0485907A1 (en) 1992-05-20
US5244742A (en) 1993-09-14
DE69116106T2 (de) 1996-05-15

Similar Documents

Publication Publication Date Title
KR920009705A (ko) 초고순도 강유전체 박막
JPS56131979A (en) Piezoelectric material for transparent vibrator and transparent vibrator
EP0131231B1 (en) Process for producing a piezo- and pyro-electric film
WO2003049172B1 (en) Lanthanide series layered superlattice materials for integrated circuit applications
KR20060073890A (ko) 압전 재료와 그 제조 방법 및 비선형 압전 소자
JPS5355986A (en) Manufacture of semiconductor device
WO2005037508B1 (en) Compositions for high power piezoelectric ceramics
KR900017956A (ko) 강유전성 세라믹재
KR970008675A (ko) 높은 전기기계적 변환 효율로 넓은 주파수 영역에서 진동하기 위하여 화학량론적으로 납의 성분을 감소시킨 압전기 세라믹 물질
GB1116283A (en) Improvements in or relating to ceramic materials
KR970067419A (ko) 유전체 세라믹 조성물
KR900011059A (ko) 압전세라믹 조성물
KR890017735A (ko) 투광성 압전세라믹스 조성물
EP0666244A1 (fr) Céramique ferroélectrique
KR970017707A (ko) 고순도 유전체 박막의 제작 방법 및 고순도 유전체 박막용 착체
Bellaiche et al. Unusual evolution of the lowest unoccupied state in Ga (As 0.5− y P 0.5− y N 2 y)
US3532628A (en) Piezoelectric ceramic material
Kornphom The Study of Local Atomic Structure and Phase Transition with Effecting on Piezoelectric Property of (1-x) BNT-xBCST Ceramics by Using Synchrotron and Raman Spectroscopy Technique
JPS6489485A (en) Piezo-electric ceramic composition
SU299873A1 (ru) Пьезокерамический материал
Takada et al. Equilibrium Phase Diagrams for the Systems Bi2O3-Pbo-Cao and Bi2O3-Pbo-Sro at 873K and 1073K in Air
KR100277845B1 (ko) 비휘발성강유전체메모리소자및그제조방법
Khodakov et al. PRODUCTION AND DIELECTRIC PROPERTIES OF SOLID SOLUTIN MONOCRYSTALS Pb (TiO-ZrO $ sub 3$), LEAD METANIOBATES AND SOLID SOLUTIONS OF LEAD METANIOBATES AND TITATANATES
SU376340A1 (ru) Радиокерамический материал
KR910006178A (ko) 전기적특성이 우수한 압전세라믹 조성물

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Re-publication after modification of scope of protection [patent]
FPAY Annual fee payment

Payment date: 20110614

Year of fee payment: 13

EXPY Expiration of term