KR920008246B1 - A semiconductor memory circuit - Google Patents

A semiconductor memory circuit

Info

Publication number
KR920008246B1
KR920008246B1 KR8901414A KR890001414A KR920008246B1 KR 920008246 B1 KR920008246 B1 KR 920008246B1 KR 8901414 A KR8901414 A KR 8901414A KR 890001414 A KR890001414 A KR 890001414A KR 920008246 B1 KR920008246 B1 KR 920008246B1
Authority
KR
South Korea
Prior art keywords
semiconductor memory
memory circuit
circuit
semiconductor
memory
Prior art date
Application number
KR8901414A
Other languages
English (en)
Other versions
KR890013652A (ko
Inventor
Noriaki Sato
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR890013652A publication Critical patent/KR890013652A/ko
Application granted granted Critical
Publication of KR920008246B1 publication Critical patent/KR920008246B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
KR8901414A 1988-02-08 1989-02-08 A semiconductor memory circuit KR920008246B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-27220 1988-02-08
JP63027220A JPH01204298A (ja) 1988-02-08 1988-02-08 半導体記憶回路

Publications (2)

Publication Number Publication Date
KR890013652A KR890013652A (ko) 1989-09-25
KR920008246B1 true KR920008246B1 (en) 1992-09-25

Family

ID=12215017

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8901414A KR920008246B1 (en) 1988-02-08 1989-02-08 A semiconductor memory circuit

Country Status (5)

Country Link
US (1) US5079746A (ko)
EP (1) EP0328458B1 (ko)
JP (1) JPH01204298A (ko)
KR (1) KR920008246B1 (ko)
DE (1) DE68915018T2 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0834257B2 (ja) * 1990-04-20 1996-03-29 株式会社東芝 半導体メモリセル
JPH07122989B2 (ja) * 1990-06-27 1995-12-25 株式会社東芝 半導体記憶装置
US5208780A (en) * 1990-07-17 1993-05-04 Kabushiki Kaisha Toshiba Structure of electrically programmable read-only memory cells and redundancy signature therefor
JP2564046B2 (ja) * 1991-02-13 1996-12-18 株式会社東芝 半導体記憶装置
JP2660111B2 (ja) * 1991-02-13 1997-10-08 株式会社東芝 半導体メモリセル
US5276653A (en) * 1991-02-13 1994-01-04 Mckenny Vernon G Fuse protection circuit
DE69222793T2 (de) * 1991-03-14 1998-03-12 Toshiba Kawasaki Kk Halbleiterspeicheranordnung
JP3181311B2 (ja) * 1991-05-29 2001-07-03 株式会社東芝 半導体記憶装置
JP3464803B2 (ja) * 1991-11-27 2003-11-10 株式会社東芝 半導体メモリセル
US5381364A (en) * 1993-06-24 1995-01-10 Ramtron International Corporation Ferroelectric-based RAM sensing scheme including bit-line capacitance isolation
US5787044A (en) * 1995-10-23 1998-07-28 Micron Technology, Inc. Memory-cell array and a method for repairing the same
KR100214462B1 (ko) * 1995-11-27 1999-08-02 구본준 반도체메모리셀의 라이트 방법
US6188239B1 (en) * 1996-08-12 2001-02-13 Micron Technology, Inc. Semiconductor programmable test arrangement such as an antifuse to ID circuit having common access switches and/or common programming switches
US5909049A (en) * 1997-02-11 1999-06-01 Actel Corporation Antifuse programmed PROM cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828750B2 (ja) * 1979-12-25 1983-06-17 富士通株式会社 半導体装置
EP0229081A4 (en) * 1985-07-09 1990-03-22 Motorola Inc ADAPTABLE LINE DRIVER CIRCUIT AND OUTPUT CIRCUIT FOR PROGRAMMABLE READ-ONLY MEMORY.
US4782466A (en) * 1985-09-04 1988-11-01 Fujitsu Limited Programmable semiconductor read only memory device

Also Published As

Publication number Publication date
DE68915018D1 (de) 1994-06-09
DE68915018T2 (de) 1994-08-18
EP0328458A3 (en) 1992-01-02
JPH01204298A (ja) 1989-08-16
EP0328458B1 (en) 1994-05-04
EP0328458A2 (en) 1989-08-16
US5079746A (en) 1992-01-07
KR890013652A (ko) 1989-09-25

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee