KR920007926A - 화학적으로 안정화된 홍연석 - Google Patents
화학적으로 안정화된 홍연석 Download PDFInfo
- Publication number
- KR920007926A KR920007926A KR1019910018545A KR910018545A KR920007926A KR 920007926 A KR920007926 A KR 920007926A KR 1019910018545 A KR1019910018545 A KR 1019910018545A KR 910018545 A KR910018545 A KR 910018545A KR 920007926 A KR920007926 A KR 920007926A
- Authority
- KR
- South Korea
- Prior art keywords
- composition
- sio
- ratio
- cao
- mol
- Prior art date
Links
- 239000000203 mixture Substances 0.000 claims 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000002245 particle Substances 0.000 claims 2
- 208000006558 Dental Calculus Diseases 0.000 claims 1
- 238000002441 X-ray diffraction Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 229920000620 organic polymer Polymers 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
- C03C14/004—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2214/00—Nature of the non-vitreous component
- C03C2214/04—Particles; Flakes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Glass Compositions (AREA)
- Silicon Compounds (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (6)
- 필수적으로 SiO290-98몰%, Al2O32-12몰%, 및 금속산화물(MexO) 0.5-8 몰%로 이루어지며, MexO는 Na,Ca,Sr 및 그의 혼합물로부터 선택되며, 조성물 중 Al2O3에 대한 MeO의 비는 0.2-0.9인, 실리카의 고온 홍연석과 본질적으로 동일한 X-선 회절 패턴을 갖는 결정질 조성물.
- 제1항에 있어서, SiO2를 91-96% 함유하고, Me가 Ca이고, Al2O3에 대한 CaO의 비가 0.4-0.7임을 특징으로 하는 조성물.
- 제1항에 있어서, SiO2를 90-92% 함유하고, Me가 Ca이고, Al2O3에 대한 CaO의 비가 0.5-0.8임을 특징으로 하는 조성물.
- 제1항에 있어서, SiO2를 92-96% 함유하고, Me가 Ca이고, Al2O3에 대한 CaO의 비가 0.3-0.8임을 특징으로 하는 조성물.
- 휘발성 유기 매질에 분산된 제1항의 조성물의 미분 입자로 이루어진 스크린 인쇄 가능한 후막 조성물.
- 고체 휘발성 유기 중합체의 매트릭스 중에 분산된 제1항의 조성물의 미분 입자의 필름으로 이루어진 그린 테이프(green tape).※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US606,079 | 1990-10-22 | ||
US07/606,079 US5096857A (en) | 1990-10-22 | 1990-10-22 | Chemically stabilized cristobalite |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920007926A true KR920007926A (ko) | 1992-05-27 |
KR940006543B1 KR940006543B1 (ko) | 1994-07-22 |
Family
ID=24426441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910018545A KR940006543B1 (ko) | 1990-10-22 | 1991-10-21 | 화학적으로 안정화된 홍연석 |
Country Status (7)
Country | Link |
---|---|
US (1) | US5096857A (ko) |
EP (1) | EP0482537B1 (ko) |
JP (1) | JP2540676B2 (ko) |
KR (1) | KR940006543B1 (ko) |
CN (1) | CN1033019C (ko) |
CA (1) | CA2053581A1 (ko) |
DE (1) | DE69118807T2 (ko) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040095874A (ko) * | 2003-04-29 | 2004-11-16 | 현대자동차주식회사 | 자동차용 알루미늄 실린더 헤드의 열처리 방법 |
KR200455653Y1 (ko) * | 2011-06-17 | 2011-09-16 | 한경희 | 분리형 폐어 유리 단조품 |
KR101226484B1 (ko) * | 2010-10-29 | 2013-01-25 | 국방과학연구소 | 인듐을 첨가한 2090 알루미늄 합금의 다단 열처리 방법 |
US9926620B2 (en) | 2012-03-07 | 2018-03-27 | Arconic Inc. | 2xxx aluminum alloys, and methods for producing the same |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6235669B1 (en) | 1993-06-01 | 2001-05-22 | General Electric Company | Viscosity tailoring of fused silica |
US5807798A (en) * | 1996-12-20 | 1998-09-15 | E. I. Du Pont De Nemours And Company | Refractory compositions for use in fluid bed chlorinators |
BR9809188A (pt) * | 1998-03-27 | 2000-08-01 | Kawasaki Steel Co | Mistura em pó para reparo por pulverização com chama |
US6749769B2 (en) | 2001-03-09 | 2004-06-15 | E. I. Du Pont De Nemours And Company | Crystalline compositions of doped aluminum phosphate |
MXPA04000118A (es) * | 2001-07-06 | 2004-06-03 | 3M Innovative Properties Co | Sustratos de fibras inorganicas para sistemas de escape y metodos de fabricacion de los mismos. |
US7101820B2 (en) * | 2002-03-06 | 2006-09-05 | E. I. Du Pont De Nemours And Company | Crystalline compositions of doped aluminum phosphate |
US7507194B2 (en) * | 2006-11-29 | 2009-03-24 | Corning Incorporated | Pulling roll material for manufacture of sheet glass |
JP5158064B2 (ja) * | 2009-12-14 | 2013-03-06 | 住友化学株式会社 | シリカ粒子の製造方法 |
JP6365826B2 (ja) * | 2013-07-11 | 2018-08-01 | 日本電気硝子株式会社 | ガラス |
MY181487A (en) * | 2014-08-25 | 2020-12-23 | Nippon Steel Chemical & Mat Co Ltd | Spherical crystalline silica particles and method for producing same |
US10908102B2 (en) * | 2015-10-23 | 2021-02-02 | Ep Minerals Llc | Methods of determining the mineralogy of calcined and flux-calcined diatomite |
CN108675308B (zh) * | 2018-06-21 | 2021-10-01 | 浙江仟源海力生制药有限公司 | 一种方英石的制备方法及含该方英石的蒙脱石标准对照品的制备方法 |
CA3149171A1 (en) | 2019-08-29 | 2021-03-04 | Gregory Kenneth BEDFORD | Ultra-white silica-based filler |
US11873574B2 (en) | 2019-12-13 | 2024-01-16 | Globalwafers Co., Ltd. | Systems and methods for production of silicon using a horizontal magnetic field |
US20230332032A1 (en) * | 2020-09-25 | 2023-10-19 | Denka Company Limited | Oxide powder and method for producing same, and resin composition |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE750722C (de) * | 1938-02-03 | 1945-01-26 | Elektrisches Entladungsgefaess, dessen Wandung aus einem hocherweichenden, mindestens 80 % Kieselsaeure und Aluminiumoxyd sowie Erdalkalien, einschliesslich Berylliumoxyd, enthaltenden, alkalifreien Glas besteht | |
US2255558A (en) * | 1939-04-22 | 1941-09-09 | Corning Glass Works | Glass composition |
US3445252A (en) * | 1966-09-14 | 1969-05-20 | Corning Glass Works | Alpha- and beta-cristobalite glassceramic articles and methods |
US3951670A (en) * | 1975-02-10 | 1976-04-20 | Corning Glass Works | Cristobalite suppression in high-silica Li2 O-Al2 O-SiO2 devitrified glass frits |
US4073655A (en) * | 1976-10-22 | 1978-02-14 | Owens-Illinois, Inc. | Glasses, thermally stable high (beta)-cristobalite glass-ceramics and method |
US4180618A (en) * | 1977-07-27 | 1979-12-25 | Corning Glass Works | Thin silicon film electronic device |
US4395388A (en) * | 1981-11-16 | 1983-07-26 | Standard Oil Company (Indiana) | Synthetic cristobalite |
US4632846A (en) * | 1984-09-17 | 1986-12-30 | Kyocera Corporation | Process for preparation of glazed ceramic substrate and glazing composition used therefor |
JPS6210593A (ja) * | 1985-07-08 | 1987-01-19 | Mitsubishi Electric Corp | 熱交換器 |
JPS63156039A (ja) * | 1986-12-18 | 1988-06-29 | Fujitsu Ltd | ガラス・セラミツクス複合焼成体 |
US4818729A (en) * | 1987-10-13 | 1989-04-04 | Aluminum Company Of America | Process for preparing stabilized high cristobalite |
JPH01126238A (ja) * | 1987-11-09 | 1989-05-18 | Shinetsu Sekiei Kk | 石英ガラス炉芯管 |
US4961998A (en) * | 1988-09-23 | 1990-10-09 | National Starch And Chemical Investment Holding Corporation | Dielectric composition having controlled thermal expansion |
-
1990
- 1990-10-22 US US07/606,079 patent/US5096857A/en not_active Expired - Fee Related
-
1991
- 1991-10-16 CA CA002053581A patent/CA2053581A1/en not_active Abandoned
- 1991-10-19 EP EP91117873A patent/EP0482537B1/en not_active Expired - Lifetime
- 1991-10-19 DE DE69118807T patent/DE69118807T2/de not_active Expired - Fee Related
- 1991-10-21 JP JP3272495A patent/JP2540676B2/ja not_active Expired - Lifetime
- 1991-10-21 KR KR1019910018545A patent/KR940006543B1/ko not_active IP Right Cessation
- 1991-10-22 CN CN91109959A patent/CN1033019C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20040095874A (ko) * | 2003-04-29 | 2004-11-16 | 현대자동차주식회사 | 자동차용 알루미늄 실린더 헤드의 열처리 방법 |
KR101226484B1 (ko) * | 2010-10-29 | 2013-01-25 | 국방과학연구소 | 인듐을 첨가한 2090 알루미늄 합금의 다단 열처리 방법 |
KR200455653Y1 (ko) * | 2011-06-17 | 2011-09-16 | 한경희 | 분리형 폐어 유리 단조품 |
US9926620B2 (en) | 2012-03-07 | 2018-03-27 | Arconic Inc. | 2xxx aluminum alloys, and methods for producing the same |
Also Published As
Publication number | Publication date |
---|---|
CN1060830A (zh) | 1992-05-06 |
JPH04292440A (ja) | 1992-10-16 |
DE69118807T2 (de) | 1996-09-26 |
JP2540676B2 (ja) | 1996-10-09 |
CN1033019C (zh) | 1996-10-16 |
US5096857A (en) | 1992-03-17 |
EP0482537A3 (en) | 1993-01-13 |
DE69118807D1 (de) | 1996-05-23 |
EP0482537B1 (en) | 1996-04-17 |
CA2053581A1 (en) | 1992-04-23 |
EP0482537A2 (en) | 1992-04-29 |
KR940006543B1 (ko) | 1994-07-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19980619 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |