KR920007926A - 화학적으로 안정화된 홍연석 - Google Patents

화학적으로 안정화된 홍연석 Download PDF

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KR920007926A
KR920007926A KR1019910018545A KR910018545A KR920007926A KR 920007926 A KR920007926 A KR 920007926A KR 1019910018545 A KR1019910018545 A KR 1019910018545A KR 910018545 A KR910018545 A KR 910018545A KR 920007926 A KR920007926 A KR 920007926A
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composition
sio
ratio
cao
mol
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KR1019910018545A
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KR940006543B1 (ko
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후 융하우
아론 솔츠버그 마이클
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미리암 디. 메코너헤이
이. 아이. 듀우판 드 네모아 앤드 캄파니
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Publication of KR940006543B1 publication Critical patent/KR940006543B1/ko

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/113Silicon oxides; Hydrates thereof
    • C01B33/12Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/004Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of particles or flakes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867Applying pastes or inks, e.g. screen printing
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2214/00Nature of the non-vitreous component
    • C03C2214/04Particles; Flakes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Glass Compositions (AREA)
  • Silicon Compounds (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)

Abstract

내용 없음.

Description

화학적으로 안정화된 홍연석
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 필수적으로 SiO290-98몰%, Al2O32-12몰%, 및 금속산화물(MexO) 0.5-8 몰%로 이루어지며, MexO는 Na,Ca,Sr 및 그의 혼합물로부터 선택되며, 조성물 중 Al2O3에 대한 MeO의 비는 0.2-0.9인, 실리카의 고온 홍연석과 본질적으로 동일한 X-선 회절 패턴을 갖는 결정질 조성물.
  2. 제1항에 있어서, SiO2를 91-96% 함유하고, Me가 Ca이고, Al2O3에 대한 CaO의 비가 0.4-0.7임을 특징으로 하는 조성물.
  3. 제1항에 있어서, SiO2를 90-92% 함유하고, Me가 Ca이고, Al2O3에 대한 CaO의 비가 0.5-0.8임을 특징으로 하는 조성물.
  4. 제1항에 있어서, SiO2를 92-96% 함유하고, Me가 Ca이고, Al2O3에 대한 CaO의 비가 0.3-0.8임을 특징으로 하는 조성물.
  5. 휘발성 유기 매질에 분산된 제1항의 조성물의 미분 입자로 이루어진 스크린 인쇄 가능한 후막 조성물.
  6. 고체 휘발성 유기 중합체의 매트릭스 중에 분산된 제1항의 조성물의 미분 입자의 필름으로 이루어진 그린 테이프(green tape).
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910018545A 1990-10-22 1991-10-21 화학적으로 안정화된 홍연석 KR940006543B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US606,079 1990-10-22
US07/606,079 US5096857A (en) 1990-10-22 1990-10-22 Chemically stabilized cristobalite

Publications (2)

Publication Number Publication Date
KR920007926A true KR920007926A (ko) 1992-05-27
KR940006543B1 KR940006543B1 (ko) 1994-07-22

Family

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KR1019910018545A KR940006543B1 (ko) 1990-10-22 1991-10-21 화학적으로 안정화된 홍연석

Country Status (7)

Country Link
US (1) US5096857A (ko)
EP (1) EP0482537B1 (ko)
JP (1) JP2540676B2 (ko)
KR (1) KR940006543B1 (ko)
CN (1) CN1033019C (ko)
CA (1) CA2053581A1 (ko)
DE (1) DE69118807T2 (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040095874A (ko) * 2003-04-29 2004-11-16 현대자동차주식회사 자동차용 알루미늄 실린더 헤드의 열처리 방법
KR200455653Y1 (ko) * 2011-06-17 2011-09-16 한경희 분리형 폐어 유리 단조품
KR101226484B1 (ko) * 2010-10-29 2013-01-25 국방과학연구소 인듐을 첨가한 2090 알루미늄 합금의 다단 열처리 방법
US9926620B2 (en) 2012-03-07 2018-03-27 Arconic Inc. 2xxx aluminum alloys, and methods for producing the same

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US6235669B1 (en) 1993-06-01 2001-05-22 General Electric Company Viscosity tailoring of fused silica
US5807798A (en) * 1996-12-20 1998-09-15 E. I. Du Pont De Nemours And Company Refractory compositions for use in fluid bed chlorinators
BR9809188A (pt) * 1998-03-27 2000-08-01 Kawasaki Steel Co Mistura em pó para reparo por pulverização com chama
US6749769B2 (en) 2001-03-09 2004-06-15 E. I. Du Pont De Nemours And Company Crystalline compositions of doped aluminum phosphate
MXPA04000118A (es) * 2001-07-06 2004-06-03 3M Innovative Properties Co Sustratos de fibras inorganicas para sistemas de escape y metodos de fabricacion de los mismos.
US7101820B2 (en) * 2002-03-06 2006-09-05 E. I. Du Pont De Nemours And Company Crystalline compositions of doped aluminum phosphate
US7507194B2 (en) * 2006-11-29 2009-03-24 Corning Incorporated Pulling roll material for manufacture of sheet glass
JP5158064B2 (ja) * 2009-12-14 2013-03-06 住友化学株式会社 シリカ粒子の製造方法
JP6365826B2 (ja) * 2013-07-11 2018-08-01 日本電気硝子株式会社 ガラス
MY181487A (en) * 2014-08-25 2020-12-23 Nippon Steel Chemical & Mat Co Ltd Spherical crystalline silica particles and method for producing same
US10908102B2 (en) * 2015-10-23 2021-02-02 Ep Minerals Llc Methods of determining the mineralogy of calcined and flux-calcined diatomite
CN108675308B (zh) * 2018-06-21 2021-10-01 浙江仟源海力生制药有限公司 一种方英石的制备方法及含该方英石的蒙脱石标准对照品的制备方法
CA3149171A1 (en) 2019-08-29 2021-03-04 Gregory Kenneth BEDFORD Ultra-white silica-based filler
US11873574B2 (en) 2019-12-13 2024-01-16 Globalwafers Co., Ltd. Systems and methods for production of silicon using a horizontal magnetic field
US20230332032A1 (en) * 2020-09-25 2023-10-19 Denka Company Limited Oxide powder and method for producing same, and resin composition

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040095874A (ko) * 2003-04-29 2004-11-16 현대자동차주식회사 자동차용 알루미늄 실린더 헤드의 열처리 방법
KR101226484B1 (ko) * 2010-10-29 2013-01-25 국방과학연구소 인듐을 첨가한 2090 알루미늄 합금의 다단 열처리 방법
KR200455653Y1 (ko) * 2011-06-17 2011-09-16 한경희 분리형 폐어 유리 단조품
US9926620B2 (en) 2012-03-07 2018-03-27 Arconic Inc. 2xxx aluminum alloys, and methods for producing the same

Also Published As

Publication number Publication date
CN1060830A (zh) 1992-05-06
JPH04292440A (ja) 1992-10-16
DE69118807T2 (de) 1996-09-26
JP2540676B2 (ja) 1996-10-09
CN1033019C (zh) 1996-10-16
US5096857A (en) 1992-03-17
EP0482537A3 (en) 1993-01-13
DE69118807D1 (de) 1996-05-23
EP0482537B1 (en) 1996-04-17
CA2053581A1 (en) 1992-04-23
EP0482537A2 (en) 1992-04-29
KR940006543B1 (ko) 1994-07-22

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