KR920007325A - 차동증폭기 - Google Patents

차동증폭기 Download PDF

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Publication number
KR920007325A
KR920007325A KR1019910016473A KR910016473A KR920007325A KR 920007325 A KR920007325 A KR 920007325A KR 1019910016473 A KR1019910016473 A KR 1019910016473A KR 910016473 A KR910016473 A KR 910016473A KR 920007325 A KR920007325 A KR 920007325A
Authority
KR
South Korea
Prior art keywords
mosfet
power source
gate
source
differential amplifier
Prior art date
Application number
KR1019910016473A
Other languages
English (en)
Inventor
도시나리 다카야나기
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR920007325A publication Critical patent/KR920007325A/ko
Priority to KR2019960011968U priority Critical patent/KR960005954Y1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45394—Indexing scheme relating to differential amplifiers the AAC of the dif amp comprising FETs whose sources are not coupled, i.e. the AAC being a pseudo-differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45454—Indexing scheme relating to differential amplifiers the CSC comprising biasing means controlled by the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45626—Indexing scheme relating to differential amplifiers the LC comprising biasing means controlled by the input signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45644—Indexing scheme relating to differential amplifiers the LC comprising a cross coupling circuit, e.g. comprising two cross-coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45646—Indexing scheme relating to differential amplifiers the LC comprising an extra current source

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Abstract

내용 없음

Description

차동증폭기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 차동증폭기의 기본적 구성을 갖춘 제1실시예를 나타낸 도면,
제2도는 제1도에 나타낸 차동증폭기를 간략화한 실시예를 나타낸 도면.

Claims (4)

  1. 드레인이 제1출력단자(OUTI)에, 게이트가 제1입력단자(IN1)에, 소오스가 제1접점(T1)에 접속된 제1MOSFET(Q1)와, 드레인이 제2출력단자(OUT2)에, 게이트가 제2입력단자(IN2)에, 소오스가 제1접점(T1)에 접속된 제2MOSFET(Q2), 제1접점(T1)과 제1전원(P1)사이에 직렬로 삽입된 전류제어용 제3MOSFET(Q3), 드레인이 제2전원(P2)에, 게이트가 제2입력단자(IN2)에, 소오스가 제1출력단자(OUT1)에 접속된 부하용 제4MOSFET(Q4) 및, 드레인 제2전원(P2)에, 게이트 제1입력단자(IN1)에, 소오스가 제2출력단자(OUT2)에 접속된 부하용 제5MOSFET(Q5)를 구비하고, 상실 제1, 제2. 제3, 제4및 제5MOSFET(Q1,Q2,Q3,Q4,Q5,)가 동일한 도전형인 것을 특징으로 하는 차동증폭기.
  2. 제1항에 있어서, 상기 제1MOSFET(Q1)와 상기 제2MOSFET(Q2)의 디멘젼이 같고, 상기 제4MOSFET(Q4)와 상기 제5MOSFET(Q5)의 디멘젼이 같은 것을 특징으로 하는 차동증폭기.
  3. 제1항에 있어서, 상기 제4MOSFET(Q4) 및 상기 제5MOSFET(Q5)가 디플리션형인 것을 특징으로 하는 차동증폭기.
  4. 제1항에 있어서, 상기 제1전원(P1)이 저전위전원이고, 상기 제2전원(P2)이 고전위전원이며, 상기 제1, 제2, 제3, 제4 및 제5MOSFET(Q1,Q2,Q3,Q4,Q5)가 N형인 것을 특징으로 하는 차동증폭기.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910016473A 1990-09-10 1991-09-20 차동증폭기 KR920007325A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019960011968U KR960005954Y1 (ko) 1990-09-21 1996-05-15 차동증폭기(differential amplifier)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90-250375 1990-09-10
JP2250375A JPH04130808A (ja) 1990-09-21 1990-09-21 差動増幅器

Publications (1)

Publication Number Publication Date
KR920007325A true KR920007325A (ko) 1992-04-28

Family

ID=17206984

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910016473A KR920007325A (ko) 1990-09-10 1991-09-20 차동증폭기

Country Status (3)

Country Link
US (1) US5210236A (ko)
JP (1) JPH04130808A (ko)
KR (1) KR920007325A (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485490A (en) * 1992-05-28 1996-01-16 Rambus, Inc. Method and circuitry for clock synchronization
USRE38482E1 (en) * 1992-05-28 2004-03-30 Rambus Inc. Delay stage circuitry for a ring oscillator
US5610429A (en) * 1994-05-06 1997-03-11 At&T Global Information Solutions Company Differential analog transistors constructed from digital transistors
DE19503036C1 (de) * 1995-01-31 1996-02-08 Siemens Ag Differenzverstärker
US5986479A (en) * 1997-05-05 1999-11-16 National Semiconductor Corporation Fully switched, class-B, high speed current amplifier driver
US5990743A (en) * 1997-12-11 1999-11-23 Lucent Technologies Inc. Amplifier having improved common mode voltage range
US6999372B2 (en) * 2003-03-18 2006-02-14 Sun Microsystems, Inc. Multi-ported memory cell
US6885610B2 (en) * 2003-04-11 2005-04-26 Sun Microsystems, Inc. Programmable delay for self-timed-margin
US7049889B2 (en) * 2004-03-31 2006-05-23 Analog Devices, Inc. Differential stage voltage offset trim circuitry
EP1806751A1 (en) 2005-12-30 2007-07-11 STMicroelectronics Pvt. Ltd. Programmable delay introducing circuit in self timed memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139506A (ja) * 1982-02-13 1983-08-18 Mitsubishi Electric Corp 差動増幅回路
JPS59151511A (ja) * 1983-02-17 1984-08-30 Mitsubishi Electric Corp 差動増幅器
US4586166A (en) * 1983-08-31 1986-04-29 Texas Instruments Incorporated SRAM with improved sensing circuit
JPH0241115A (ja) * 1988-08-02 1990-02-09 Mazda Motor Corp 車両用シート装置
US5098789A (en) * 1989-11-27 1992-03-24 The Dow Chemical Company Method of producing low friction under high vacuum on a ceramic or metal-ceramic

Also Published As

Publication number Publication date
US5210236A (en) 1993-05-11
JPH04130808A (ja) 1992-05-01

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A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application
WICV Withdrawal of application forming a basis of a converted application