KR920007119A - 종형 열처리 장치 - Google Patents

종형 열처리 장치 Download PDF

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Publication number
KR920007119A
KR920007119A KR1019910016609A KR910016609A KR920007119A KR 920007119 A KR920007119 A KR 920007119A KR 1019910016609 A KR1019910016609 A KR 1019910016609A KR 910016609 A KR910016609 A KR 910016609A KR 920007119 A KR920007119 A KR 920007119A
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KR
South Korea
Prior art keywords
heat treatment
vertical heat
treatment apparatus
stocker
container
Prior art date
Application number
KR1019910016609A
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English (en)
Other versions
KR0147387B1 (ko
Inventor
니시히로노브
Original Assignee
이노우에 다케시
도오교오 에레구토론 사가미 가부시끼가이샤
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Publication date
Priority claimed from JP25493190A external-priority patent/JP2888369B2/ja
Priority claimed from JP25493090A external-priority patent/JPH04133318A/ja
Application filed by 이노우에 다케시, 도오교오 에레구토론 사가미 가부시끼가이샤 filed Critical 이노우에 다케시
Publication of KR920007119A publication Critical patent/KR920007119A/ko
Application granted granted Critical
Publication of KR0147387B1 publication Critical patent/KR0147387B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/912—Differential etching apparatus having a vertical tube reactor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

내용 없음

Description

종형 열처리 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는, 성형품 자동추출기의 개략을 나타내는 사시도,
제2도는, 상학동장치의 분해사시도,
제3도 및 제1도는, 작용을 나타내는 정면도.

Claims (14)

  1. 피처리물(2)을 수용하고, 이 피처리물에 대하여 소정의 열처리를 실시하기 위한 세로형 열처리로(30)와, 미처리의 이 피처리물(2)을 적절하게 덮도록 설치된 포위용기를 가지며 이 피처리물(2)을 일시적으로 대기시키기 위한 피처리물 스톡커(3)와, 이 포위용기 내부와 연결되어 통하며, 이 내부에 불활성 가스 또는 전처리 가스를 도입하기 위한 가스 도입수단과, 이 세로형 열처리로(30)와 피처리물 스톡커(3)사이에서 이 피처리물(2)을 반송하기 위한 반송장치(40)을 구비하여 되는 세로형 열처리장치.
  2. 제1항에 있어서, 피처리물 스톡커(3)가 피처리물(2)이 수용되는 열처리용의 열처리 용기를 수납하는 세로형 열처리장치.
  3. 제2항에 있어서, 처리용 용기가 피처리물인 반도체 웨이퍼(2)를 적층하여 수납하는 세로형 열처리장치.
  4. 제1항에 있어서, 있어서, 이 피처리물(2)이 수용된 반송용 용기를 수용하기 위한 반송용 용기 스톡커(10)와, 이 반송용 용기와 피처리물(2)이 수용되는 열처리용의 피처리용기와의 사이에서 이 피처리물(2)의 이송을 실행하기 위한 실어서 이송하는 기구(2)로 구비되는 세로형 열처리장치.
  5. 제1항에 있어서, 피처리물이 반도체 웨이퍼(2)인 세로형 열처리장치.
  6. 제1항에 있어서, 세로형 열처리로(30)가, 여러개 설치되어 있고, 피처리물 스톡커(3)도 이것과 같은 수로 설치되어 있는 세로형 열처리장치.
  7. 제4항에 있어서, 세로형 열처리로(30)가, 적어도 4개 설치되어 있는 세로형 열처리장치.
  8. 제1항에 있어서, 이 포위용기가 하단이 트여지고 상단에 가스 도입 수단이 접속되어 있으며, 승강장치에 의하여 지지되어 있는 세로형 열처리장치.
  9. 제1항에 있어서, 이 처리물 스톡커가 세도형 열처리로(30)와 병렬 설치되어 있고 이들앞에 이 반송기구(40)가 직선상으로 설치되어 있는 세로형 열처리 장치.
  10. 제1항에 있어서, 이 처리물 스톡커가 세로형 열처리로(3)와의 사이에 이 실어서 이송하는 기구(20)가 설치되어 있는 세로형 열처리장치.
  11. 제1항에 있어서, 이 처리물 스톡커의 아래쪽으로 이 피처리물을 회전이 자유롭게 지지하는 턴테이블(35)이 설치되어 있는 세로형 열처리장치.
  12. 제1항에 있어서, 이 불화성 가스가 질소가스인 세로형 열처리장치.
  13. 제1항에 있어서, 이 전처리 가스가 산화물 에칭가스인 세로형 열처리장치.
  14. 제1항에 있어서, 이 반송기구(40)가 적어도 2개 설치되어 있는 세로형 열처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910016609A 1990-09-25 1991-09-24 종형 열처리 장치 KR0147387B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP90-254931 1990-09-25
JP25493190A JP2888369B2 (ja) 1990-09-25 1990-09-25 縦型熱処理装置
JP25493090A JPH04133318A (ja) 1990-09-25 1990-09-25 縦型熱処理装置
JP90-254930 1990-09-25

Publications (2)

Publication Number Publication Date
KR920007119A true KR920007119A (ko) 1992-04-28
KR0147387B1 KR0147387B1 (ko) 1998-11-02

Family

ID=26541917

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910016609A KR0147387B1 (ko) 1990-09-25 1991-09-24 종형 열처리 장치

Country Status (2)

Country Link
US (1) US5234528A (ko)
KR (1) KR0147387B1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JP3186262B2 (ja) * 1992-10-14 2001-07-11 ソニー株式会社 半導体装置の製造方法
US5900105A (en) * 1996-07-09 1999-05-04 Gamma Precision Technology, Inc. Wafer transfer system and method of using the same
JP3664897B2 (ja) 1998-11-18 2005-06-29 東京エレクトロン株式会社 縦型熱処理装置
JP2001023978A (ja) 1999-07-05 2001-01-26 Mitsubishi Electric Corp 半導体装置の製造装置および製造方法
KR20020019414A (ko) * 2000-09-05 2002-03-12 엔도 마코토 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법
US20070084408A1 (en) * 2005-10-13 2007-04-19 Applied Materials, Inc. Batch processing chamber with diffuser plate and injector assembly
US20070084406A1 (en) * 2005-10-13 2007-04-19 Joseph Yudovsky Reaction chamber with opposing pockets for gas injection and exhaust
KR100826269B1 (ko) * 2006-06-13 2008-04-29 삼성전기주식회사 복합 소성로 및 이에 채용되는 승하강 장치
JP7429252B2 (ja) 2022-03-18 2024-02-07 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法、基板処理方法及びプログラム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4770590A (en) * 1986-05-16 1988-09-13 Silicon Valley Group, Inc. Method and apparatus for transferring wafers between cassettes and a boat
JPS6384016A (ja) * 1986-09-26 1988-04-14 Sumitomo Metal Ind Ltd 気相成長装置
JPS63157870A (ja) * 1986-12-19 1988-06-30 Anelva Corp 基板処理装置
US5015330A (en) * 1989-02-28 1991-05-14 Kabushiki Kaisha Toshiba Film forming method and film forming device
NL8900544A (nl) * 1989-03-06 1990-10-01 Asm Europ Behandelingsstelsel, behandelingsvat en werkwijze voor het behandelen van een substraat.

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Publication number Publication date
KR0147387B1 (ko) 1998-11-02
US5234528A (en) 1993-08-10

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