KR920006893B1 - 글로방전 침착장치 - Google Patents

글로방전 침착장치 Download PDF

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Publication number
KR920006893B1
KR920006893B1 KR1019830006055A KR830006055A KR920006893B1 KR 920006893 B1 KR920006893 B1 KR 920006893B1 KR 1019830006055 A KR1019830006055 A KR 1019830006055A KR 830006055 A KR830006055 A KR 830006055A KR 920006893 B1 KR920006893 B1 KR 920006893B1
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KR
South Korea
Prior art keywords
deposition
substrate
upstream
process gas
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019830006055A
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English (en)
Korean (ko)
Other versions
KR840007319A (ko
Inventor
프램나스
마사쯔구 이주
Original Assignee
에너지 컨버젼 디바이스 인코포레이티드
로렌스 지. 노리스
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Publication date
Application filed by 에너지 컨버젼 디바이스 인코포레이티드, 로렌스 지. 노리스 filed Critical 에너지 컨버젼 디바이스 인코포레이티드
Publication of KR840007319A publication Critical patent/KR840007319A/ko
Application granted granted Critical
Publication of KR920006893B1 publication Critical patent/KR920006893B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019830006055A 1982-12-22 1983-12-21 글로방전 침착장치 Expired KR920006893B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US452,224 1982-12-22
US452224 1982-12-22
US06/452,224 US4513684A (en) 1982-12-22 1982-12-22 Upstream cathode assembly

Publications (2)

Publication Number Publication Date
KR840007319A KR840007319A (ko) 1984-12-06
KR920006893B1 true KR920006893B1 (ko) 1992-08-21

Family

ID=23795607

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019830006055A Expired KR920006893B1 (ko) 1982-12-22 1983-12-21 글로방전 침착장치

Country Status (10)

Country Link
US (1) US4513684A (enExample)
EP (1) EP0118644A1 (enExample)
JP (1) JPS59155123A (enExample)
KR (1) KR920006893B1 (enExample)
AU (1) AU564627B2 (enExample)
BR (1) BR8307044A (enExample)
CA (1) CA1214253A (enExample)
ES (1) ES8501168A1 (enExample)
MX (1) MX154312A (enExample)
ZA (2) ZA839420B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4483883A (en) * 1982-12-22 1984-11-20 Energy Conversion Devices, Inc. Upstream cathode assembly
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
JPH0722127B2 (ja) * 1985-02-20 1995-03-08 株式会社日立製作所 反応・処理装置内の清浄化および反応・処理用気相物質の純化方法、および反応・処理装置
US4601260A (en) * 1985-04-01 1986-07-22 Sovonics Solar Systems Vertical semiconductor processor
DE3706482A1 (de) * 1986-02-28 1987-09-03 Politechnika Warszawska Verfahren und vorrichtungen zur herstellung von diffusionsoberflaechenschichten auf metallenen werkstuecken durch glimmentladung
DE3752208T2 (de) * 1986-11-10 1998-12-24 Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa Durch Mikrowellen gesteigertes CVD-Verfahren und -Gerät
US6677001B1 (en) * 1986-11-10 2004-01-13 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD method and apparatus
JPH0672306B2 (ja) * 1987-04-27 1994-09-14 株式会社半導体エネルギー研究所 プラズマ処理装置およびプラズマ処理方法
US4870030A (en) * 1987-09-24 1989-09-26 Research Triangle Institute, Inc. Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
KR930011413B1 (ko) * 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
GB2264957B (en) * 1992-03-12 1995-09-20 Bell Communications Res Deflected flow in a chemical vapor deposition cell
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE7700229L (sv) * 1976-01-22 1977-07-23 Western Electric Co Forfarande for beleggning av substrat genom utfellning fran ett plasma
US4301765A (en) * 1979-01-10 1981-11-24 Siemens Aktiengesellschaft Apparatus for generating layers on a carrier foil
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
US4262631A (en) * 1979-10-01 1981-04-21 Kubacki Ronald M Thin film deposition apparatus using an RF glow discharge
JPS5934421B2 (ja) * 1979-11-29 1984-08-22 住友電気工業株式会社 薄膜製造法
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
JPS56165371A (en) * 1980-05-26 1981-12-18 Shunpei Yamazaki Semiconductor device
JPS5756923A (en) * 1980-09-23 1982-04-05 Mitsubishi Electric Corp Manufacture of thin film
US4379181A (en) * 1981-03-16 1983-04-05 Energy Conversion Devices, Inc. Method for plasma deposition of amorphous materials
JPS5833829A (ja) * 1981-08-24 1983-02-28 Toshiba Corp 薄膜形成装置
US4462333A (en) * 1982-10-27 1984-07-31 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus

Also Published As

Publication number Publication date
CA1214253A (en) 1986-11-18
BR8307044A (pt) 1984-07-31
EP0118644A1 (en) 1984-09-19
AU2245383A (en) 1984-06-28
JPH0576172B2 (enExample) 1993-10-22
US4513684A (en) 1985-04-30
ZA839419B (en) 1984-08-29
MX154312A (es) 1987-06-30
ES528254A0 (es) 1984-11-01
AU564627B2 (en) 1987-08-20
JPS59155123A (ja) 1984-09-04
ES8501168A1 (es) 1984-11-01
ZA839420B (en) 1984-08-29
KR840007319A (ko) 1984-12-06

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