ES528254A0 - Perfeccionamientos introducidos en un aparato de deposicion por descarga incandescente - Google Patents
Perfeccionamientos introducidos en un aparato de deposicion por descarga incandescenteInfo
- Publication number
- ES528254A0 ES528254A0 ES528254A ES528254A ES528254A0 ES 528254 A0 ES528254 A0 ES 528254A0 ES 528254 A ES528254 A ES 528254A ES 528254 A ES528254 A ES 528254A ES 528254 A0 ES528254 A0 ES 528254A0
- Authority
- ES
- Spain
- Prior art keywords
- deposition device
- improvements introduced
- incandescent discharge
- incandescent
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008021 deposition Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/452,224 US4513684A (en) | 1982-12-22 | 1982-12-22 | Upstream cathode assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES528254A0 true ES528254A0 (es) | 1984-11-01 |
| ES8501168A1 ES8501168A1 (es) | 1984-11-01 |
Family
ID=23795607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES528254A Expired ES8501168A1 (es) | 1982-12-22 | 1983-12-21 | Perfeccionamientos introducidos en un aparato de deposicion por descarga incandescente |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4513684A (es) |
| EP (1) | EP0118644A1 (es) |
| JP (1) | JPS59155123A (es) |
| KR (1) | KR920006893B1 (es) |
| AU (1) | AU564627B2 (es) |
| BR (1) | BR8307044A (es) |
| CA (1) | CA1214253A (es) |
| ES (1) | ES8501168A1 (es) |
| MX (1) | MX154312A (es) |
| ZA (2) | ZA839420B (es) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4483883A (en) * | 1982-12-22 | 1984-11-20 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
| DE3427057A1 (de) * | 1984-07-23 | 1986-01-23 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum |
| JPH0722127B2 (ja) * | 1985-02-20 | 1995-03-08 | 株式会社日立製作所 | 反応・処理装置内の清浄化および反応・処理用気相物質の純化方法、および反応・処理装置 |
| US4601260A (en) * | 1985-04-01 | 1986-07-22 | Sovonics Solar Systems | Vertical semiconductor processor |
| DE3706482A1 (de) * | 1986-02-28 | 1987-09-03 | Politechnika Warszawska | Verfahren und vorrichtungen zur herstellung von diffusionsoberflaechenschichten auf metallenen werkstuecken durch glimmentladung |
| US6677001B1 (en) * | 1986-11-10 | 2004-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD method and apparatus |
| EP0267513B1 (en) * | 1986-11-10 | 1998-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD method and apparatus |
| JPH0672306B2 (ja) | 1987-04-27 | 1994-09-14 | 株式会社半導体エネルギー研究所 | プラズマ処理装置およびプラズマ処理方法 |
| US4870030A (en) * | 1987-09-24 | 1989-09-26 | Research Triangle Institute, Inc. | Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer |
| KR930011413B1 (ko) * | 1990-09-25 | 1993-12-06 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 펄스형 전자파를 사용한 플라즈마 cvd 법 |
| GB2264957B (en) * | 1992-03-12 | 1995-09-20 | Bell Communications Res | Deflected flow in a chemical vapor deposition cell |
| DE4324320B4 (de) * | 1992-07-24 | 2006-08-31 | Fuji Electric Co., Ltd., Kawasaki | Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE7700229L (sv) * | 1976-01-22 | 1977-07-23 | Western Electric Co | Forfarande for beleggning av substrat genom utfellning fran ett plasma |
| US4301765A (en) * | 1979-01-10 | 1981-11-24 | Siemens Aktiengesellschaft | Apparatus for generating layers on a carrier foil |
| US4282267A (en) * | 1979-09-20 | 1981-08-04 | Western Electric Co., Inc. | Methods and apparatus for generating plasmas |
| US4262631A (en) * | 1979-10-01 | 1981-04-21 | Kubacki Ronald M | Thin film deposition apparatus using an RF glow discharge |
| JPS5934421B2 (ja) * | 1979-11-29 | 1984-08-22 | 住友電気工業株式会社 | 薄膜製造法 |
| CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
| US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
| JPS56165371A (en) * | 1980-05-26 | 1981-12-18 | Shunpei Yamazaki | Semiconductor device |
| JPS5756923A (en) * | 1980-09-23 | 1982-04-05 | Mitsubishi Electric Corp | Manufacture of thin film |
| US4379181A (en) * | 1981-03-16 | 1983-04-05 | Energy Conversion Devices, Inc. | Method for plasma deposition of amorphous materials |
| JPS5833829A (ja) * | 1981-08-24 | 1983-02-28 | Toshiba Corp | 薄膜形成装置 |
| US4462333A (en) * | 1982-10-27 | 1984-07-31 | Energy Conversion Devices, Inc. | Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus |
-
1982
- 1982-12-22 US US06/452,224 patent/US4513684A/en not_active Expired - Lifetime
-
1983
- 1983-12-15 AU AU22453/83A patent/AU564627B2/en not_active Ceased
- 1983-12-20 ZA ZA839420A patent/ZA839420B/xx unknown
- 1983-12-20 CA CA000443731A patent/CA1214253A/en not_active Expired
- 1983-12-20 ZA ZA839419A patent/ZA839419B/xx unknown
- 1983-12-21 JP JP58241829A patent/JPS59155123A/ja active Granted
- 1983-12-21 KR KR1019830006055A patent/KR920006893B1/ko not_active IP Right Cessation
- 1983-12-21 MX MX199856A patent/MX154312A/es unknown
- 1983-12-21 ES ES528254A patent/ES8501168A1/es not_active Expired
- 1983-12-21 BR BR8307044A patent/BR8307044A/pt unknown
- 1983-12-22 EP EP83307894A patent/EP0118644A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| AU2245383A (en) | 1984-06-28 |
| ZA839420B (en) | 1984-08-29 |
| JPS59155123A (ja) | 1984-09-04 |
| EP0118644A1 (en) | 1984-09-19 |
| AU564627B2 (en) | 1987-08-20 |
| ES8501168A1 (es) | 1984-11-01 |
| ZA839419B (en) | 1984-08-29 |
| KR840007319A (ko) | 1984-12-06 |
| JPH0576172B2 (es) | 1993-10-22 |
| MX154312A (es) | 1987-06-30 |
| US4513684A (en) | 1985-04-30 |
| CA1214253A (en) | 1986-11-18 |
| BR8307044A (pt) | 1984-07-31 |
| KR920006893B1 (ko) | 1992-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FD1A | Patent lapsed |
Effective date: 20020727 |