KR920005391B1 - Contact window manufacturing method of semiconductor device using conductive matrial spacer - Google Patents

Contact window manufacturing method of semiconductor device using conductive matrial spacer Download PDF

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KR920005391B1
KR920005391B1 KR1019890009674A KR890009674A KR920005391B1 KR 920005391 B1 KR920005391 B1 KR 920005391B1 KR 1019890009674 A KR1019890009674 A KR 1019890009674A KR 890009674 A KR890009674 A KR 890009674A KR 920005391 B1 KR920005391 B1 KR 920005391B1
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conductive material
insulating material
forming
layer
spacer
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KR1019890009674A
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Korean (ko)
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KR910003759A (en
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김재갑
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현대전자산업 주식회사
정몽현
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract

forming first insulation, second conduction, second insulation and conduction layers (2,3,4,5) on a first conduction layer (1) sequentially; etching the layers (5,4,3,2) to form a groove; forming an insulating layer (4') into the groove region to form a protective conduction layer (7) on the layer (4'); etching the layer (7) by anisotropic etching process to form a conductive spacer (7') on the side wall of the contact groove to remove the exposed insulating layer (4'); and forming a third conduction layer (8) on the whole substrate to connect the upper conduction layer (5) to the first conduction layer (1) through the contact groove. The insulation layer with a uniform thickness is formed on the wall of the contact.

Description

전도물질 스페이서를 이용한 반도체 소자의 접속장치 제조방법Method for manufacturing a connection device of a semiconductor device using a conductive spacer

제1도는 본 발명의 다층 전도물질 접촉장치의 마스크층의 평면도.1 is a plan view of a mask layer of a multilayer conductive contact device of the present invention.

제2도는 종래 기술에 의해 형성된 다층전도물질 접속장치의 단면도.2 is a cross-sectional view of a multilayer conductive material connecting device formed by the prior art.

제3도는 본 발명에 의한 제조방법에 의해 제조된 다층 전도물질 접속장치의 단면도.3 is a cross-sectional view of a multilayer conductive material connecting device manufactured by the manufacturing method according to the present invention.

제4a도부터 제4d도까지는 본 발명의 제조공정을 나타내는 단면도.4A to 4D are sectional views showing the manufacturing process of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

A : 제1차 전도물질의 마스크 B : 제2차 전도물질의 마스크A: mask of primary conductive material B: mask of secondary conductive material

C : 콘택마스크 D : 제3차 전도물질의 마스크C: Contact mask D: Mask of tertiary conductive material

1 : 제1차 전도물질 2 : 제1차 절연물질1: primary conductive material 2: primary insulating material

3 : 제2차 전도물질 4 : 제2차 절연물질3: secondary conductive material 4: secondary insulating material

4' : 절연물질 5 및 7 : 전도물질4 ': insulating material 5 and 7: conductive material

7' : 전도물질 스페이서 6 : 감광물질7 ': conductive material spacer 6: photosensitive material

8 : 제3차 전도물질 9 : 절연물질 스페이서8: tertiary conductive material 9: insulating material spacer

본 발명은 고집적 반도체 소자에서 다층전도물질을 선택적으로 접속시키는 접속장치의 그 제조방법에 관한 것으로, 특히 하부의 전도물질과 상부의 전도물질을 접속시키면서 중간층의 전도물질과는 중간층 전도물질 표면 전체에 걸쳐 균일한 두께의 절연물질로 절연시키는 전도물질 스페이서를 이용한 반도체 소자의 접속장치의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a connecting device for selectively connecting a multilayer conductive material in a highly integrated semiconductor device. In particular, the conductive material in the middle layer and the conductive material in the upper layer are connected to the entire surface of the intermediate layer conductive material. The present invention relates to a method for manufacturing a semiconductor device connecting device using a conductive material spacer which is insulated with an insulating material having a uniform thickness.

종래의 자기정렬방식에 의해 다층전도물질을 선택적으로 접속시키는 구조는 제 2도에서 보는 바와 같이, 중간층의 전도물질 측벽에 절연목적의 스페이서를 형성함으로써, 다른 층의 전도물질과 절연시켰다. 이와같이 중간층 전도물질 측벽에 형성된 절연물질 스페이서는 측벽 전체에 걸쳐 균일한 두께를 유지할 수 없으며, 또한 중간층 전도물질에 형성하는 절연물질의 두께가 얇을 경우(300Å 미만)는 스페이서를 형성하기가 쉽지 않다. 그러므로, 중간층의 전도물질 측벽에 형성되는 절연물질의 스페이서가 단순히 절연목적으로만 사용될 경우는 그 목적을 충분히 달성할 수 있지만, 측벽 전체에 걸쳐 균일한 두께의 절연물질을 형성하고자 할때, 특히 캐패시터 유전체막으로 사용할 경우는 캐패시터 용량면에서 그 두께의 절연물질을 형성하고자 할때, 특히 캐패시터 유전체막으로 사용할 경우는 캐패시터 용량면에서 그 두께가 매우 얇고(300Å 미만), 중간층 전도물질 표면 전체에 걸쳐 그 두께가 균일해야만 하므로, 종래의 방법을 사용하여 절연물질 스페이서를 형성하는 방법으로는 그 목적을 달성하기가 결코 쉽지 않다. 또한, 상부의 전도물질을 침착하기전에 대기중의 산소에 의해 접속시키고자 하는 부분의 노출된 전도물질 위에 형성된 자연산화막을 제거하기위해 행하는 식각공정에서 절연물질 스페이서가 식각되어 그 특성을 저하시키게 된다.The structure for selectively connecting the multilayer conductive material by the conventional self-aligning method is insulated from the conductive material of the other layer by forming a spacer for insulating purpose on the sidewall of the conductive material as shown in FIG. In this way, the insulating material spacer formed on the sidewall of the intermediate layer conductive material cannot maintain a uniform thickness throughout the sidewall, and when the thickness of the insulating material formed on the intermediate layer conductive material is thin (less than 300 kPa), it is difficult to form the spacer. Therefore, if the spacer of the insulating material formed on the sidewall of the conductive material of the intermediate layer is used only for insulating purposes, the object can be sufficiently achieved, but especially when the insulating material having a uniform thickness is formed over the entire sidewall, When used as a dielectric film, when forming an insulating material of that thickness in the capacitor capacitance, especially when used as a capacitor dielectric film, the thickness of the capacitor is very thin (less than 300 microns), and the entire surface of the intermediate layer conductive material Since the thickness must be uniform, a method of forming an insulating material spacer using a conventional method is never easy to achieve the object. In addition, the insulating material spacer is etched in the etching process performed to remove the natural oxide film formed on the exposed conductive material in the portion to be connected by oxygen in the atmosphere before the upper conductive material is deposited, thereby deteriorating its characteristics. .

본 발명은 상기한 종래기술의 문제점을 해소하기 위하여 콘택 벽면에 일정두께의 졀연막을 형성한 후 전도물질 스페이서를 이용한 반도체 소자의 접속장치의 제조방법을 제공하는데 그 목적이 있다.An object of the present invention is to provide a method for manufacturing a semiconductor device connecting device using a conductive material spacer after forming a film of a predetermined thickness on the contact wall in order to solve the above problems of the prior art.

본 발명의 특징은 제1차 전도물질(1)상부에 제1차 절연물질(2), 제2차 전도물질(3), 제2차 절연물질(4) 및 전도물질(5)을 각각 소정두께로 순차적으로 형성하는 단계와, 상기 전도물질(5), 제2차 절연물질(4), 제2차 전도물질(3) 및 제1차 절연물질(2)의 일부분 식각하여 흠을 형성하는 단계와, 상기 흠이 형성된 부분에 절연물질(4')을 소정의 두께로 형성하고 절연물질(4')상부에 보호막용 전도물질(7)을 형성하는 단계와, 상기 콘택흠 측벽에 스페이서를 형성하도록 비등방성 식각으로 상기 전도물질(7)식각하여 전도물질 스페이서(7')를 형성한후 노출된 절연물질(4')을 제거하는 단계와, 전체적으로 제3차 전도물질(8)을 형성하여 상부의 전도물질(5)을 콘택흠을 통하여 제1차 전도물질(1)에 접속시키는 단계로 이루어지는 전도물질 스페이서를 이용한 반도체 소자의 접속장치의 제조방법에 있다.A characteristic of the present invention is that the primary insulating material 2, the secondary conductive material 3, the secondary insulating material 4 and the conductive material 5 are respectively disposed on the primary conductive material 1. Sequentially forming a thickness, and etching a portion of the conductive material (5), the secondary insulating material (4), the secondary conductive material (3) and the primary insulating material (2) to form a defect Forming an insulating material 4 'with a predetermined thickness on the portion where the groove is formed, and forming a conductive material 7 for the protective layer on the insulating material 4', and forming a spacer on the sidewall of the contact groove. Etching the conductive material 7 by anisotropic etching to form a conductive material spacer 7 ', and then removing the exposed insulating material 4' and forming the third conductive material 8 as a whole. Connecting the upper conductive material (5) to the primary conductive material (1) through a contact flaw. A method for manufacturing a connecting device.

본 발명에 의하면, 중간층의 전도물질위에 일정두께의 절연물질을 균일하게 형성한후, 그 위에 전도물질을 형성하여 중간층 전도물질 상부의 절연물질을 보호하고, 그리고 하부의 전도물질 위의 일정부분을 식각하여 콘택을 형성한다. 그후, 전체적으로 일정두께의 절연물질을 균일하게 형성하여 중간층 전도물질 측벽에 균일한 절연물질을 형성한 후, 상기 측벽의 절연물질을 보호하기 위한 전도물질 스페이서를 형성한 다음, 노출된 부분의 절연물질을 식각하여 콘택하부의 전도물질을 노출시키고, 다시 전도물질을 침착함으로써 중간층의 전도물질 상부 및 측벽의 절연물질의 두께를 균일하게 하고, 또한 그 두께를 정확히 제어하면서 하부의 전도물질과 상부의 전도물질을 접속시킬 수 있다.According to the present invention, after uniformly forming an insulating material having a predetermined thickness on the conductive material of the intermediate layer, and forming a conductive material thereon to protect the insulating material on the upper conductive material of the intermediate layer, and a portion of the conductive material below It is etched to form a contact. Thereafter, an insulating material having a predetermined thickness is formed uniformly to form a uniform insulating material on the sidewall of the intermediate layer conductive material, and then a conductive material spacer is formed to protect the insulating material on the sidewall. To expose the conductive material under the contact, and deposit the conductive material to make the thickness of the insulating material on the upper and sidewalls of the intermediate layer uniform, and also control the thickness of the lower conductive material and the upper conductive material. The material can be connected.

이하, 본 발명을 첨부된 도면을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

제1도는 본 발명의 다층전도물질 접촉장치의 마스크층을 나타내는 평면도로써, 제1차 전도물질 마스크(A), 제2차 전도물질 마스크(B), 콘택마스트(C), 제3차 전도물질 마스크(D)를 겹쳐놓은 것으로, 접속영역은 전도물질이 모두 중첩된 부분에 형성되어 상부와 하부의 전도물질을 접속해 준다.1 is a plan view showing a mask layer of the multi-layer conductive material contact device of the present invention, the first conductive material mask (A), the second conductive material mask (B), the contact mast (C), the third conductive material By overlapping the mask (D), the connection region is formed in the overlapping portion of the conductive material to connect the upper and lower conductive material.

제2도는 종래의 방법에 따라 형성된 다층전도물질 접속장치를 나타내는 단면도로서, 1차 전도물질(1)상에 순차적으로 제1차 절연물질(2), 제 2차 전도물질(3) 및 제2차 절연물질(4)을 형성하고, 소정부분에 콘택(홈)을 형성한 다음 전체적으로 절연물질을 형성한 후 비등방성 식각으로 절연물질 스페이서(9)을 형성하고 제3차 전도물질(8)을 형성하여 제1차 전도물질(1)에 접속한다. 그리고 콘택측벽에 절연목적의 스페이서(9)를 형성한 자기정렬 방식을 사용함으로써 제2차 전도물질(3)측벽전체에 걸쳐 형성된 스페이서의 두께가 균일하지 못함을 알 수 있다.2 is a cross-sectional view showing a multi-layer conductive material connection device formed according to a conventional method, the primary insulating material (2), the secondary conductive material (3) and the second on the primary conductive material (1) sequentially After forming the primary insulating material 4, forming a contact (groove) in a predetermined portion, and then forming an insulating material as a whole, an insulating material spacer 9 is formed by anisotropic etching, and the third conductive material 8 is formed. It is formed and connected to the primary conductive material (1). The thickness of the spacer formed over the entire sidewall of the secondary conductive material 3 is not uniform by using the self-aligning method in which the spacer 9 for insulation purposes is formed on the contact side wall.

제3도는 본 발명에 따라 형성된 다층 전도물질 접속장치를 나타내는 단면도로서, 제2차 전도물질(3)의 하부, 상부 및 측벽전체에 걸쳐 일정두께의 균일한 절연물질(2,4 및 4')이 형성되고 제3차 전도물질(8)이 콘택을 통하여 제1차 전도물질(1)에 접속되어 있음을 알 수 있다.3 is a cross-sectional view showing a multi-layer conductive material connection device formed in accordance with the present invention, wherein a uniform thickness of uniform insulating materials 2, 4 and 4 'are provided over the lower, upper and sidewalls of the secondary conductive material 3. It can be seen that the third conductive material 8 is formed and connected to the primary conductive material 1 through the contact.

제4a도부터 제4d도까지는 본 발명의 제조과정을 나타내는 단면도로서, 제4a도는 제1차 전도물질(1)을 형성하고 그위에 제1차 절연물질(2)을 형성한 후, 그위에 다시 제2차 전도물질(3), 제2차 절연물질(4)을 보호하기 위한 전도물질(5)을 순서대로 형성한다. 그후, 감광물질(6)을 코팅하고 콘택마스크를 이용하여 사진현상기술에 의해 일정부분을 제거한 상태의 단면도이다.4A to 4D are cross-sectional views showing the manufacturing process of the present invention, and FIG. 4A shows the primary conductive material 1 and the primary insulating material 2 formed thereon, and then again thereon. The secondary conductive material 3 and the conductive material 5 for protecting the secondary insulating material 4 are sequentially formed. Thereafter, the photosensitive material 6 is coated and a cross-sectional view of a state in which a certain portion is removed by a photo development technique using a contact mask.

제4b도는 감광물질(6)을 마스크로하여 전도물질(5), 제2차 절연물질(4), 제2차 전도물질(3), 제1차 절연물질(2)을 순차로 식각하고 감광물질(6)을 제거한 후, 콘택부분의 제2차 전도물질(3)측벽에 절연물질을 형성하기 위해 전체적으로 절연물질(4')을 일정두께 균일하게 형성한 다음, 콘택측면에 형성된 절연물질(4')을 보호하기 위한 전도물질(7)을 침착한 상태의 단면도이다.4B shows the photosensitive material 6 as a mask. The conductive material 5, the secondary insulating material 4, the secondary conductive material 3, and the primary insulating material 2 are sequentially etched and photosensitive. After removing the material (6), in order to form an insulating material on the side wall of the secondary conductive material (3) of the contact portion, an overall insulating material 4 'is uniformly formed to a certain thickness, and then the insulating material formed on the contact side ( 4 ') is a cross-sectional view of a conductive material 7 deposited therein for protection.

제4c도는 전도물질(7)을 비등방성으로 식각하여 콘택측벽에 전도물질 스페이서(7')를 형성한 후, 상기 전도물질 스페이서(7')와, 제2차 절연물질(4)을 보호하기 위한 전도물질(5)을 식각장벽 층으로 하여 노출된 절연물질(4')을 식각한 상태의 단면도로서, 제2차 전도물질(3)상부의 절연물질(4)과 측벽의 절연물질(4')은 각각 전도물질(5)과 전도물질 스페이서(7')가 보호하게 된다.FIG. 4C illustrates that the conductive material 7 is anisotropically etched to form the conductive material spacers 7 'on the contact side walls, and then the conductive material spacers 7' and the secondary insulating material 4 are protected. A cross-sectional view of the exposed insulating material 4 'using the conductive material 5 as an etch barrier layer, wherein the insulating material 4 on the secondary conductive material 3 and the insulating material 4 on the sidewalls are etched. ') Is protected by the conductive material 5 and the conductive material spacer 7', respectively.

제4d도는 상부에 전체적으로 제3차 전도물질(8)을 침착하여 제1차 전도물질(1)과 접속된 상태를 나타낸 단면도이다.4d is a cross-sectional view showing a state in which the third conductive material 8 is entirely deposited on the upper portion and connected to the primary conductive material 1.

상기의 제조방법으로 콘택측벽에 균일한 절연막을 형성하는 제조방법은 반도체 제조공정에서 중요하게 적용될 수 있는데, 특히 다층 적층캐패시터 제공공정시 콘택을 형성하여, 상부의 전도물질을 하부에 접속할때 측벽의 절연막을 유전체막으로 사용하게 되면 작은 면적에서 캐패시터 용량을 증대시킬 수 있는 효과가 있다.The manufacturing method of forming a uniform insulating film on the contact side wall by the above manufacturing method can be important in the semiconductor manufacturing process, in particular, forming a contact in the process of providing a multi-layer laminated capacitor, when the upper conductive material is connected to the lower side of the sidewall When the insulating film is used as the dielectric film, the capacitor capacity can be increased in a small area.

Claims (2)

고집적 반도체 소자의 접속장치 제조방법에 있어서, 제1차 전도물질(1)상부에 제1차 절연물질(2), 제2차 전도물질(3), 제2차 절연물질(4) 및 전도물질(5)을 각각 소정두께로 순차적으로 형성하는 단계와 상기 전도물질(5), 제2차 절연물질(4), 제2차 전도물질(3) 및 제1차 절연물질(2)의 일부분 식각하여 흠을 형성하는 단계와, 상기 흠이 형성된 부분에 절연물질(4')을 소정의 두께로 형성하고 절연물질(4') 상부에 보호막용 전도물질(7)을 형성하는 단계와, 상기 콘택흠 측벽에 스페이서를 형성하도록 비등방성 식각으로 상기 전도물질(7)을 식각하여 전도물질 스페이서(7')를 형성한 후 노출된 절연물질(4')을 제거하는 단계와, 전체적으로 제3차 전도물질(8)을 형성하여 상부의 전도물질(5)을 콘택흠을 통하여 제1차 전도물질(1)에 접속시키는 단계로 이루어지는 것을 특징으로 하는 전도물질 스페이서를 이용한 반도체 소자의 접속장치의 제조방법.A method for manufacturing a connection device for a highly integrated semiconductor device, comprising: a primary insulating material (2), a secondary conductive material (3), a secondary insulating material (4), and a conductive material on top of a primary conductive material (1) (5) sequentially forming a predetermined thickness, respectively, and etching part of the conductive material (5), the secondary insulating material (4), the secondary conductive material (3) and the primary insulating material (2). Forming a flaw, forming an insulating material 4 'on a portion where the flaw is formed to a predetermined thickness, and forming a conductive material 7 for a protective film on the insulating material 4'; Etching the conductive material 7 by anisotropic etching to form spacers on the lateral sidewalls to form the conductive material spacers 7 ', and then removing the exposed insulating material 4', and the overall third conductive material. Forming a material (8) to connect the upper conductive material (5) to the primary conductive material (1) through contact defects. The method of access of the semiconductor device using the conducting material of the spacer to the gong. 제1항에 있어서, 제2차 전도물질 상부 및 측면에 형성되는 제2차 절연물질(4) 및 절연물질(4')의 두께를 균일하게 형성하는 것을 특징으로 하는 전도물질 스페이서를 이용한 반도체 소자의 접속장치의 제조방법.The semiconductor device according to claim 1, wherein the thicknesses of the secondary insulating material 4 and the insulating material 4 'formed on the upper and side surfaces of the secondary conductive material are uniformly formed. Method for manufacturing a connection device of the.
KR1019890009674A 1989-07-07 1989-07-07 Contact window manufacturing method of semiconductor device using conductive matrial spacer KR920005391B1 (en)

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