KR920005358A - 매몰트렌치 커패시터 셀 제조방법 - Google Patents

매몰트렌치 커패시터 셀 제조방법

Info

Publication number
KR920005358A
KR920005358A KR1019900012333A KR900012333A KR920005358A KR 920005358 A KR920005358 A KR 920005358A KR 1019900012333 A KR1019900012333 A KR 1019900012333A KR 900012333 A KR900012333 A KR 900012333A KR 920005358 A KR920005358 A KR 920005358A
Authority
KR
South Korea
Prior art keywords
capacitor cell
trench capacitor
buried trench
manufacturing buried
manufacturing
Prior art date
Application number
KR1019900012333A
Other languages
English (en)
Other versions
KR930006135B1 (ko
Inventor
라사균
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR1019900012333A priority Critical patent/KR930006135B1/ko
Publication of KR920005358A publication Critical patent/KR920005358A/ko
Application granted granted Critical
Publication of KR930006135B1 publication Critical patent/KR930006135B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019900012333A 1990-08-10 1990-08-10 매몰트렌치 커패시터 셀 제조방법 KR930006135B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900012333A KR930006135B1 (ko) 1990-08-10 1990-08-10 매몰트렌치 커패시터 셀 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900012333A KR930006135B1 (ko) 1990-08-10 1990-08-10 매몰트렌치 커패시터 셀 제조방법

Publications (2)

Publication Number Publication Date
KR920005358A true KR920005358A (ko) 1992-03-28
KR930006135B1 KR930006135B1 (ko) 1993-07-07

Family

ID=19302230

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900012333A KR930006135B1 (ko) 1990-08-10 1990-08-10 매몰트렌치 커패시터 셀 제조방법

Country Status (1)

Country Link
KR (1) KR930006135B1 (ko)

Also Published As

Publication number Publication date
KR930006135B1 (ko) 1993-07-07

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070622

Year of fee payment: 15

LAPS Lapse due to unpaid annual fee