KR920005242A - Method of manufacturing transistor having structure of gate-insulator-semiconductor - Google Patents

Method of manufacturing transistor having structure of gate-insulator-semiconductor Download PDF

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Publication number
KR920005242A
KR920005242A KR1019900012815A KR900012815A KR920005242A KR 920005242 A KR920005242 A KR 920005242A KR 1019900012815 A KR1019900012815 A KR 1019900012815A KR 900012815 A KR900012815 A KR 900012815A KR 920005242 A KR920005242 A KR 920005242A
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KR
South Korea
Prior art keywords
conductive layer
gate
insulator
semiconductor
transistor
Prior art date
Application number
KR1019900012815A
Other languages
Korean (ko)
Inventor
김경태
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019900012815A priority Critical patent/KR920005242A/en
Priority to FR9103299A priority patent/FR2665980A1/en
Priority to DE4114166A priority patent/DE4114166A1/en
Priority to GB9117195A priority patent/GB2247349A/en
Priority to ITRM910621A priority patent/IT1250463B/en
Publication of KR920005242A publication Critical patent/KR920005242A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2

Abstract

내용 없음No content

Description

게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법Method of manufacturing transistor having structure of gate-insulator-semiconductor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 단면도.3 is a cross-sectional view according to the present invention.

제4도는 본 발명에 따른 제조 공정도.4 is a manufacturing process diagram according to the present invention.

Claims (11)

게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법에 있어서, 제1또는 제2도전형의 채널영역이 형성된 제1도전형의 반도체 기판상면에 게이트 절연막을 형성하는 제1공정과 상기 게이트 절연막 상면에 소정의 일함수를 가지는 제1도전층과 사익 제1도전층보다 높은 도전율을 가지는 제2도전층을 순차적으로 형성하는 제2공정과, 상기 제1,제2도전층 및 게이트 절연막을 선택 식각하여 소정영역에 게이트 전극을 형성한 후 이온주입법 또는 확산방법으로 제2도전형의 소오스 및 드레인 영역을 형성하는 제3공정이 순차적으로 이루어짐을 특징으로하는 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법.A method of manufacturing a transistor having a gate-insulator-semiconductor structure, the method comprising: forming a gate insulating film on an upper surface of a semiconductor substrate of a first conductive type in which a channel region of a first or second conductive type is formed; A second process of sequentially forming a first conductive layer having a predetermined work function and a second conductive layer having a higher conductivity than the wing first conductive layer, and selectively etching the first and second conductive layers and the gate insulating film Of the transistor having a gate-insulator-semiconductor structure in which a gate electrode is formed in a predetermined region, and a third process of forming a source and a drain region of the second conductivity type is sequentially performed by ion implantation or diffusion. Manufacturing method. 제1항에 있어서, 상기 게이트 절연막이 실리콘 산화막, 또는 실리콘 질화막, 또는 상기 실리콘 산화막과 실리콘 질화막의 조합으로 이루어짐을 특징으로 하는 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법.The method of manufacturing a transistor having a structure of a gate-insulator-semiconductor according to claim 1, wherein the gate insulating film is made of a silicon oxide film, a silicon nitride film, or a combination of the silicon oxide film and the silicon nitride film. 제2항에 있어서, 상기 게이트 절연막의 두께가 5nm-50nm임을 특징으로하는 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법.3. The method of claim 2, wherein the gate insulating film has a thickness of 5 nm to 50 nm. 제1항에 있어서, 상기 제1도전층이 4.1eV-5.2eV사이의 일함수를 가짐을 특징으로 하는 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법.The method of claim 1, wherein the first conductive layer has a work function between 4.1 eV and 5.2 eV. 제4항에 있어서, 상기 제1도전층이 타이타늄 나이트라이드(TiN)임을 특징으로 하는 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법.The method of claim 4, wherein the first conductive layer is titanium nitride (TiN). 제5항에 있어서, 상기 제1도전층의 두께가 10nm-200nm임을 특징으로 하는 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법.The method of claim 5, wherein the first conductive layer has a thickness of about 10 nm to about 200 nm. 제1항에 있어서, 상기 제2도전층이 공융점 금속 또는 상기 공융점 금속의 실리사이드임을 특징으로 하는 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법.2. The method of claim 1, wherein the second conductive layer is a eutectic metal or a silicide of the eutectic metal. 제7항에 있어서, 상기 제2도전층을 고융점 금속으로 형성할 경우 상기 고융점 금속이 텅스텐(W), 타이타늄(Ti), 코발트(Co), 니켈(Ni), 필리듐(Pd), 크롬(Cr), 지르코늄(Zr), 탄탈륨(Ta), 바나듐(V), 하프늄(Hf)등임을 특징으로 하는 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법.The method of claim 7, wherein when the second conductive layer is formed of a high melting point metal, the high melting point metal may be tungsten (W), titanium (Ti), cobalt (Co), nickel (Ni), phidium (Pd), A method of manufacturing a transistor having a structure of a gate-insulator-semiconductor, characterized by chromium (Cr), zirconium (Zr), tantalum (Ta), vanadium (V), hafnium (Hf), and the like. 제8항에 있어서, 상기 제2도전층의 두께가 50nm-200nm임을 특징으로 하는 게이트-절연체-반도체-의 구조를 가지는 트랜지스터의 제조방법.The method of claim 8, wherein the second conductive layer has a thickness of 50 nm to 200 nm. 제1항에 있어서, 상기 소오스 및 드레인이 단일구조, 또는 LDD구조, 또는 DDD구조, 또는 상기 단일구조와 LDD구조와 DDD구조의 조합으로 이루어지는 구조로 형성됨을 특징으로 하는 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법.The gate-insulator-semiconductor structure according to claim 1, wherein the source and drain are formed of a single structure or an LDD structure, or a DDD structure, or a combination of the single structure and the LDD structure and the DDD structure. Method of manufacturing a transistor having a. 제1항에 있어서, 상기 게이트전극이 타이타늄 나이트라이드의 단일층으로 형성될 수 있음을 특징으로 하는 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법.The method of claim 1, wherein the gate electrode may be formed of a single layer of titanium nitride. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.
KR1019900012815A 1990-08-20 1990-08-20 Method of manufacturing transistor having structure of gate-insulator-semiconductor KR920005242A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019900012815A KR920005242A (en) 1990-08-20 1990-08-20 Method of manufacturing transistor having structure of gate-insulator-semiconductor
FR9103299A FR2665980A1 (en) 1990-08-20 1991-03-19 METHOD FOR MANUFACTURING A TRANSISTOR HAVING AN INSULATED GRID SEMICONDUCTOR STRUCTURE.
DE4114166A DE4114166A1 (en) 1990-08-20 1991-04-30 METHOD FOR PRODUCING A TRANSISTOR THAT HAS THE STRUCTURE OF A GATE INSULATION LAYER SEMICONDUCTOR
GB9117195A GB2247349A (en) 1990-08-20 1991-08-08 Method for fabricating MOS transistors
ITRM910621A IT1250463B (en) 1990-08-20 1991-08-19 PROCEDURE FOR THE MANUFACTURE OF TRANSISTORS WITH GATE STRUCTURE -INSULATING -SEMICONDUCTOR.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900012815A KR920005242A (en) 1990-08-20 1990-08-20 Method of manufacturing transistor having structure of gate-insulator-semiconductor

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DE (1) DE4114166A1 (en)
FR (1) FR2665980A1 (en)
GB (1) GB2247349A (en)
IT (1) IT1250463B (en)

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Publication number Priority date Publication date Assignee Title
KR100589865B1 (en) * 1997-03-31 2006-09-20 프리스케일 세미컨덕터, 인크. Semiconductor device and a process for forming the device

Also Published As

Publication number Publication date
DE4114166A1 (en) 1992-02-27
GB2247349A (en) 1992-02-26
ITRM910621A1 (en) 1993-02-19
GB9117195D0 (en) 1991-09-25
ITRM910621A0 (en) 1991-08-19
IT1250463B (en) 1995-04-07
FR2665980A1 (en) 1992-02-21

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