JPH02237073A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH02237073A
JPH02237073A JP5691589A JP5691589A JPH02237073A JP H02237073 A JPH02237073 A JP H02237073A JP 5691589 A JP5691589 A JP 5691589A JP 5691589 A JP5691589 A JP 5691589A JP H02237073 A JPH02237073 A JP H02237073A
Authority
JP
Japan
Prior art keywords
gate
layer
wsi
interface
insulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5691589A
Other languages
Japanese (ja)
Inventor
Kazuyuki Fujiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5691589A priority Critical patent/JPH02237073A/en
Publication of JPH02237073A publication Critical patent/JPH02237073A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To enable an insulated gate of this design to be small enough in gate resistance even if it is formed thin by a method wherein a gate electrode pattern is formed of a high melting metal silicide layer which contains oversaturated silicon, which is heated in a non-oxidizing atmosphere to separate oversaturated silicon at an interface between the gate electrode pattern and a gate insulating film.
CONSTITUTION: A tungsten silicide (WSix) layer 6 whose compositional ratio of Si to W is 3:1 is formed in vacuum on a substrate 1, on which a gate oxide film and others have been formed, using a tungsten silicide (WSix) target whose compositional ratio of Si to W is 3:1 or which contains excessive silicon as compared with a stoichiometric composition, which is subjected to an annealing treatment in a non-oxidizing atmosphere (N2). By this treatment, most of excessive Si contained in the WSix layer 6 is separated at an interface between a gate insulating film 5 and a field oxide film 3 to form a deposited Si layer 7 at the interface. By this setup, an insulated gate, which is low enough in gate resistance even if it is formed thin and possessed of a stable threshold voltage without being accompanied with the complication of a process and the deterioration of a gate insulated film is insulating property, can be formed.
COPYRIGHT: (C)1990,JPO&Japio
JP5691589A 1989-03-09 1989-03-09 Manufacture of semiconductor device Pending JPH02237073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5691589A JPH02237073A (en) 1989-03-09 1989-03-09 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5691589A JPH02237073A (en) 1989-03-09 1989-03-09 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH02237073A true JPH02237073A (en) 1990-09-19

Family

ID=13040771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5691589A Pending JPH02237073A (en) 1989-03-09 1989-03-09 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH02237073A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654242A (en) * 1994-09-28 1997-08-05 Sony Corporation Method for making refractory metal silicide electrode
DE19703223A1 (en) * 1996-07-31 1998-02-05 Lg Semicon Co Ltd Electrode manufacturing method for semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654242A (en) * 1994-09-28 1997-08-05 Sony Corporation Method for making refractory metal silicide electrode
DE19703223A1 (en) * 1996-07-31 1998-02-05 Lg Semicon Co Ltd Electrode manufacturing method for semiconductor device
DE19703223B4 (en) * 1996-07-31 2006-04-27 LG Semicon Co., Ltd., Cheongju Method for producing an electrode of a semiconductor device

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