KR920003559A - 네이티브 옥사이드를 이용한 mns 케페시터 제조방법 - Google Patents
네이티브 옥사이드를 이용한 mns 케페시터 제조방법 Download PDFInfo
- Publication number
- KR920003559A KR920003559A KR1019900010612A KR900010612A KR920003559A KR 920003559 A KR920003559 A KR 920003559A KR 1019900010612 A KR1019900010612 A KR 1019900010612A KR 900010612 A KR900010612 A KR 900010612A KR 920003559 A KR920003559 A KR 920003559A
- Authority
- KR
- South Korea
- Prior art keywords
- mns
- capacitor
- native oxide
- manufacturing
- native
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 MNS케페시터 구조도.
Claims (1)
- IC 내부에 사용되는 케페시터에 있어서, MNS(METAL NITRIDE SILICON)구조를 가지며 화학적 성장 방법을 적용하여 Si3N4(3)와 Si(1)사이에 네이티브 옥사이드(5)를 형성시킨 것을 특징으로 하는 네이티브 옥사이드를 이용한 MNS케페시터 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900010612A KR930006146B1 (ko) | 1990-07-13 | 1990-07-13 | 네이티브 옥사이드를 이용한 mns 케페시터 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900010612A KR930006146B1 (ko) | 1990-07-13 | 1990-07-13 | 네이티브 옥사이드를 이용한 mns 케페시터 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920003559A true KR920003559A (ko) | 1992-02-29 |
| KR930006146B1 KR930006146B1 (ko) | 1993-07-07 |
Family
ID=19301214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900010612A KR930006146B1 (ko) | 1990-07-13 | 1990-07-13 | 네이티브 옥사이드를 이용한 mns 케페시터 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR930006146B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100231847B1 (ko) * | 1996-05-21 | 1999-12-01 | 김영환 | 반도체소자 제조방법 |
-
1990
- 1990-07-13 KR KR1019900010612A patent/KR930006146B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100231847B1 (ko) * | 1996-05-21 | 1999-12-01 | 김영환 | 반도체소자 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR930006146B1 (ko) | 1993-07-07 |
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Payment date: 20050620 Year of fee payment: 13 |
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| LAPS | Lapse due to unpaid annual fee |