KR920003507A - 반도체집적회로 - Google Patents

반도체집적회로 Download PDF

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Publication number
KR920003507A
KR920003507A KR1019910012321A KR910012321A KR920003507A KR 920003507 A KR920003507 A KR 920003507A KR 1019910012321 A KR1019910012321 A KR 1019910012321A KR 910012321 A KR910012321 A KR 910012321A KR 920003507 A KR920003507 A KR 920003507A
Authority
KR
South Korea
Prior art keywords
analog circuit
semiconductor integrated
circuit
integrated circuit
cell
Prior art date
Application number
KR1019910012321A
Other languages
English (en)
Other versions
KR950012660B1 (ko
Inventor
히로미 구사카베
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR920003507A publication Critical patent/KR920003507A/ko
Application granted granted Critical
Publication of KR950012660B1 publication Critical patent/KR950012660B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체집적회로에 사용되는 아날로그회로셀중 기본적인 전류증폭셀의 모델을 나타낸 등가 회로도.
제2도는 본 발명의 반도체집적회로에 사용되는 아날로그회로셀중 진폭제한형 증폭셀을 나타낸 회로도.
제3도는 본 발명의 반도체집적회로에 사용되는 아날로그회로셀중 오버드라이브형(over drive 型)증폭셀을 나타낸 회로도.

Claims (4)

  1. 입력단자(3a,3b) 및 출력단자(4a,4b)중 한쪽이 전류흡입형이고 다른쪽이 전류배출형인 전류모드기능 아날로그회로셀을 포함하는 복수개의 아날로그회로셀 (12,13,15,16)이 조합되어 구성된 특정 시스템 또는 서브시스템을 형성하는 회로를 갖춘 것을 특징으로 하는 반도체집적회로.
  2. 제1항에 있어서, 상기 복수개의 아날로그회로셀(12,13,15,16)이 캐스케이드 접속되어 이루어진 것을 특징으로 하는 반도체 직접회로.
  3. 제1항에 있어서, 상기 복수개의 아날로그회로셀(12,13,15,16)중 초단(初段)이 아날로그회로셀은 고임피던스의 전압입력단자 및 고임피던스의 전류출력단자를 갖춘 Gm증폭형 아날로그회로셀(12)인 것을 특징으로 하는 반도체접적회로.
  4. 제1항에 있어서, 상기 복수개의 아날로그회로셀(12,13,15,16)중 최종단(最終段)의 아날로그회로셀은 저임피던스의 전류입력단자 및 싱글엔드 출력단자(4)를 갖춘 싱글앤드형 아날로그회로 셀인 것을 특징으로 하는 반도체접적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910012321A 1990-07-19 1991-07-19 반도체집적회로 KR950012660B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2189531A JP2610361B2 (ja) 1990-07-19 1990-07-19 半導体集積回路
JP02-189531 1990-07-19

Publications (2)

Publication Number Publication Date
KR920003507A true KR920003507A (ko) 1992-02-29
KR950012660B1 KR950012660B1 (ko) 1995-10-19

Family

ID=16242857

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910012321A KR950012660B1 (ko) 1990-07-19 1991-07-19 반도체집적회로

Country Status (3)

Country Link
US (1) US5198781A (ko)
JP (1) JP2610361B2 (ko)
KR (1) KR950012660B1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2712127B1 (fr) * 1993-11-02 1995-12-01 Alcatel Radiotelephone Elément d'amplification à structure différentielle en mode de courant.
US5550492A (en) * 1994-12-01 1996-08-27 Analog Devices, Inc. Analog to digital converter using complementary differential emitter pairs
US5684419A (en) * 1994-12-01 1997-11-04 Analog Devices, Inc. n-bit analog-to-digital converter with n-1 magnitude amplifiers and n comparators
US5554943A (en) * 1994-12-01 1996-09-10 Analog Devices, Inc. Analog to digital converter having a magnitude amplifier with an improved differential input amplifier
FR2730363A1 (fr) * 1995-02-08 1996-08-09 Philips Electronics Nv Amplificateur a gain eleve en hautes frequences et oscillateur a circuit resonant muni d'un tel amplificateur
US20040198287A1 (en) * 2002-10-08 2004-10-07 Kramer Bradley A. Simultaneous Gm-C filter and variable gain amplifier circuit
DE10313332A1 (de) * 2003-03-25 2004-10-21 Infineon Technologies Ag Frequenzteiler-Anordnung mit Stromsignaleinpeisung
US7183851B2 (en) * 2004-06-30 2007-02-27 Intel Corporation Differential dual port current conveyor circuit
US20080182519A1 (en) * 2007-01-30 2008-07-31 Hesam Amir Aslanzadeh Method and System for Robust Single Sideband LO Generation
JP4845868B2 (ja) 2007-12-25 2011-12-28 富士通株式会社 差動カレントミラー回路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3509364A (en) * 1969-03-27 1970-04-28 Ibm Video amplifier particularly adapted for integrated circuit fabrication
NL6915478A (ko) * 1969-10-13 1971-04-15
US3931583A (en) * 1972-05-30 1976-01-06 Tektronix, Inc. Wideband differential amplifier
JPS5325230A (en) * 1976-08-06 1978-03-08 Honda Motor Co Ltd Method of casting
JPS5828006B2 (ja) * 1977-07-27 1983-06-13 川崎製鉄株式会社 熱間仕上げ圧延における圧延材の板クラウンの制御方法
JPS5961206A (ja) * 1982-09-29 1984-04-07 Toshiba Corp 差動増幅装置
US4641108A (en) * 1985-10-16 1987-02-03 Raytheon Company Configurable analog integrated circuit
JPH01223807A (ja) * 1988-03-02 1989-09-06 Matsushita Electric Ind Co Ltd 出力回路
JPH0250607A (ja) * 1988-08-12 1990-02-20 Sanyo Electric Co Ltd 利得制御増幅回路
JP2846034B2 (ja) * 1989-02-17 1999-01-13 株式会社日立製作所 高周波増幅回路

Also Published As

Publication number Publication date
US5198781A (en) 1993-03-30
JP2610361B2 (ja) 1997-05-14
KR950012660B1 (ko) 1995-10-19
JPH0476941A (ja) 1992-03-11

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