KR920003431A - 진공분위기를 형성하는 장치 및 처리장치 - Google Patents

진공분위기를 형성하는 장치 및 처리장치 Download PDF

Info

Publication number
KR920003431A
KR920003431A KR1019910012430A KR910012430A KR920003431A KR 920003431 A KR920003431 A KR 920003431A KR 1019910012430 A KR1019910012430 A KR 1019910012430A KR 910012430 A KR910012430 A KR 910012430A KR 920003431 A KR920003431 A KR 920003431A
Authority
KR
South Korea
Prior art keywords
process chamber
susceptor
gap
processing apparatus
wall
Prior art date
Application number
KR1019910012430A
Other languages
English (en)
Other versions
KR0151734B1 (ko
Inventor
사또시 가네꼬
다이찌 후지다
도시히사 노자와
요이찌 우에다
유끼마사 요시다
이사히로 하세가와
하루오 오까노
Original Assignee
이노우레 아끼라
도꾜 일렉트론 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19246890A external-priority patent/JPH0478134A/ja
Application filed by 이노우레 아끼라, 도꾜 일렉트론 리미티드 filed Critical 이노우레 아끼라
Publication of KR920003431A publication Critical patent/KR920003431A/ko
Application granted granted Critical
Publication of KR0151734B1 publication Critical patent/KR0151734B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

내용 없음

Description

진공분위기를 형성하는 장치 및 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예에 관한 마그네트론 플라즈마 에칭시스템을 나타내는 전체 레이아웃도.
제2도는 마그네트론 플라즈마에칭 시스템의 프로세스 챔버의 개요를 나타내는 종단면도.
제3도는 냉각 자켓의 하면을 나타내는 평면도.

Claims (10)

  1. 피처리체를 재치 고정하기 위한 서셉터와, 상기 서셉터를 온도 콘트롤 하기 위한 온도 조절부와, 상기 서셉터 및 상기 온도 조절부를 둘러싸는 프로세스 챔버벽과, 상기 프로세스 챔버벽의 일부가 상기 서셉터 및 상기 온도조절부의 측주변면과 대면하는 것에 의해 형성된 간극을 상기 프로세스 챔버의 처리 분위기에서 차단하는 시일 수단과, 상기 간극의 안의 가스를 배기하는 비기수단을 가지고, 그 중에서 배기된 간극에 의해 상기 프로세스 챔버벽이 상기 서셉터 및 상기 온도 조절부에서 차단되는 것을 포함하는 처리장치.
  2. 제1항에 있어서, 상기 프로세스 챔버벽의 하부측벽에 가열용 히터가 매입되어 있는 것을 포함하는 처리장치.
  3. 제1항에 있어서, 상기 온도 조절부는 냉각자켓 및 가열용 히터를 가지는 것을 포함하는 처리장치.
  4. 제3항에 있어서, 상기 온도 조절부가 상기 서셉터상의 피처리체를 실온 이하로 냉각하는 냉각자켓을 가지는 것을 포함하는 처리장치.
  5. 제1항에 있어서, 상기 프로세스 챔버벽의 일부가 벽저부에서 상방으로 향하여 늘어나서 내부통을 형성하고, 이 내부통이 상기 서셉터 및 상기 온도조절부의 측 주변면과 대면하는 것에 의해 상기 간극이 형성되는 것을 포함하는 처리장치.
  6. 제5항에 있어서, 상기 간극을 형성하는 상기 내부통, 상기 서셉터, 및 상기 온도 조절부의 측주변면이 경면마무리 되어 있는 것을 포함하는 처리장치.
  7. 제1항에 있어서, 상기 서셉터에 RF전력을 공급하는 RF전원과, 상기 프로세스 챔버벽을 접지하는 수단을 가지고, 상기 서셉터에 통전하면, 상기 서셉터 및 상기 프로세스 챔버벽의 사이에 플라즈마가 형성되는 것을 포함하는 처리장치.
  8. 제7항에 있어서, 상기 서셉터 및 상기 프로세스 챔버벽의 사이에 형성된 플리즈마에 자계를 부여하는 자계부여 수단을 가지는 것을 포함하는 처리장치.
  9. 냉각부를 가지는 한쪽에서 챔버벽이 가열되는 프로세스 챔버와, 이 프로세스 챔버의 벽부와 상기 냉각부를 단열하는 수단과, 상기 프로세스 챔버에 인접하여 설치되고, 상기 프로세스 챔버에 대하여 피처리체를 반입 또는 반출하는 인접 챔버와, 상기 프로세스 챔버 및 상기 인접 챔버의 대향면 사이에 장입되는 단열 부재와, 상기 챔버내를 소망의 진공도에 배기하는 수단을 가지는 것을 포함하는 진공 분위기를 형성하는 처리장치.
  10. 제9항에 있어서, 상기 단열부재에 의해, 상기 프로세스 챔버 및 상기 로드록 챔버의 대향면 사이의 대부분의 영역에 간극이 형성되어 있는 것을 포함하는 진공 분위기를 형성하는 처리장치.
    ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.
KR1019910012430A 1990-07-20 1991-07-20 진공분위기를 형성하는 장치 및 처리장치 KR0151734B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP19246890A JPH0478134A (ja) 1990-07-20 1990-07-20 処理装置
JP2-192468 1990-07-20
JP2-192467 1990-07-20
JP90-192468 1990-07-20
JP19246790 1990-07-20
JP90-192467 1990-07-20

Publications (2)

Publication Number Publication Date
KR920003431A true KR920003431A (ko) 1992-02-29
KR0151734B1 KR0151734B1 (ko) 1998-12-01

Family

ID=26507331

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910012430A KR0151734B1 (ko) 1990-07-20 1991-07-20 진공분위기를 형성하는 장치 및 처리장치

Country Status (4)

Country Link
US (1) US5223113A (ko)
EP (1) EP0467397B1 (ko)
KR (1) KR0151734B1 (ko)
DE (1) DE69115374T2 (ko)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4330717B2 (ja) * 1999-08-09 2009-09-16 東京エレクトロン株式会社 ホットプレートユニット及びホットプレートユニットの使用方法
US5376211A (en) * 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
US5376213A (en) * 1992-07-28 1994-12-27 Tokyo Electron Limited Plasma processing apparatus
US5427670A (en) * 1992-12-10 1995-06-27 U.S. Philips Corporation Device for the treatment of substrates at low temperature
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
DE9407482U1 (de) * 1994-05-05 1994-10-06 Balzers und Leybold Deutschland Holding AG, 63450 Hanau Funktionseinrichtung für eine Vakuumanlage für die Behandlung von scheibenförmigen Werkstücken
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
TW409152B (en) * 1996-06-13 2000-10-21 Samsung Electronic Etching gas composition for ferroelectric capacitor electrode film and method for etching a transition metal thin film
US6328096B1 (en) * 1997-12-31 2001-12-11 Temptronic Corporation Workpiece chuck
US6646236B1 (en) 1999-01-25 2003-11-11 Ibiden Co., Ltd. Hot plate unit
US6416318B1 (en) * 1999-06-16 2002-07-09 Silicon Valley Group, Inc. Process chamber assembly with reflective hot plate and pivoting lid
EP1079416A1 (en) * 1999-08-09 2001-02-28 Ibiden Co., Ltd. Hot plate unit
US20020195201A1 (en) * 2001-06-25 2002-12-26 Emanuel Beer Apparatus and method for thermally isolating a heat chamber
US6800172B2 (en) * 2002-02-22 2004-10-05 Micron Technology, Inc. Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor
US6858264B2 (en) * 2002-04-24 2005-02-22 Micron Technology, Inc. Chemical vapor deposition methods
US6814813B2 (en) 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
JP3972195B2 (ja) * 2002-09-13 2007-09-05 株式会社安川電機 真空用モータ
US6926775B2 (en) 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
JP4294976B2 (ja) * 2003-02-27 2009-07-15 東京エレクトロン株式会社 基板処理装置
US7214274B2 (en) * 2003-03-17 2007-05-08 Tokyo Electron Limited Method and apparatus for thermally insulating adjacent temperature controlled processing chambers
US20040182315A1 (en) * 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) * 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
JP2005191494A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光装置、デバイスの製造方法
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US20050217799A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly
US7584942B2 (en) * 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
KR100631479B1 (ko) * 2004-09-25 2006-10-09 두산디앤디 주식회사 유도 결합 플라즈마 처리장치
US20060144337A1 (en) * 2005-01-06 2006-07-06 Hsien-Che Teng Heater for heating a wafer and method for preventing contamination of the heater
JP2008192802A (ja) * 2007-02-05 2008-08-21 Spansion Llc 半導体製造装置およびその製造方法
US20110180097A1 (en) * 2010-01-27 2011-07-28 Axcelis Technologies, Inc. Thermal isolation assemblies for wafer transport apparatus and methods of use thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS59163826A (ja) * 1983-03-08 1984-09-14 Toshiba Corp ドライエツチング方法
KR910005733B1 (ko) * 1986-01-17 1991-08-02 가부시기가이샤 히다찌 세이사꾸쇼 플라즈마 처리방법 및 장치
JPH0830273B2 (ja) * 1986-07-10 1996-03-27 株式会社東芝 薄膜形成方法及び装置
JPH0834205B2 (ja) * 1986-11-21 1996-03-29 株式会社東芝 ドライエツチング装置
JPS63204726A (ja) * 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
EP0297898B1 (en) * 1987-07-02 1995-10-11 Kabushiki Kaisha Toshiba Method of dry etching
KR970003885B1 (ko) * 1987-12-25 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 에칭 방법 및 그 장치
JPH01302726A (ja) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd 反応性イオンエッチング装置
JP2512783B2 (ja) * 1988-04-20 1996-07-03 株式会社日立製作所 プラズマエッチング方法及び装置
US5078851A (en) * 1989-07-26 1992-01-07 Kouji Nishihata Low-temperature plasma processor

Also Published As

Publication number Publication date
EP0467397A1 (en) 1992-01-22
KR0151734B1 (ko) 1998-12-01
DE69115374T2 (de) 1996-05-30
US5223113A (en) 1993-06-29
EP0467397B1 (en) 1995-12-13
DE69115374D1 (de) 1996-01-25

Similar Documents

Publication Publication Date Title
KR920003431A (ko) 진공분위기를 형성하는 장치 및 처리장치
US4099041A (en) Susceptor for heating semiconductor substrates
US3423562A (en) Glow discharge apparatus
KR970014484A (ko) 플라스마 처리장치
KR940016554A (ko) 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
KR930014813A (ko) 반도체 웨이퍼의 온도 조정 방법
JP2003517198A5 (ko)
KR960012316A (ko) 피처리체의 처리장치
KR940022689A (ko) 플라즈마 처리시스템 및 플라즈마 처리방법
TW328631B (en) Susceptor, apparatus of heat-treating semiconductor wafer, and method of heat-treating the same
WO1997003236A3 (en) System and method for thermal processing of a semiconductor substrate
KR950001932A (ko) 고속열처리로의 온도제어방법 및 그 장치
DE60229549D1 (de) Induktionsheizgerät und verfahren zum kontrollierten erheizen von einem artikel
DE60204279D1 (de) Vakuum- und gasdichter Behälter zur thermischen Isolierung von Induktionsheizeinrichtungen
KR980700675A (ko) 플라즈마 처리를 위한 방법 및 장치(Method and Apparatus for Plasma Processing)
ATE388482T1 (de) Örtliche erwärmung und kühlung von substraten
DE60237240D1 (de) Suszeptorsystem
KR910010753A (ko) 전자사이클로트론 공명을 사용한 플라즈마처리방법 및 장치
JP5276796B2 (ja) プラズマ処理炉
EP3494351A1 (en) Thermal process device with non-uniform insulation
JP2005072468A (ja) 半導体ウエハの熱処理装置
EP1377125A4 (en) THERMO-INSULATING PANEL OF INDUCTION HEATING APPARATUS
JP2540492B2 (ja) イオン源用ア−クチヤンバ−装置
FR2395663A1 (fr) Procede et dispositif de traitement thermique par microonde
JP2656503B2 (ja) マイクロ波プラズマ処理方法

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090609

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee