DE69115374T2 - Vorrichtung zum Herstellen eines reduzierten Drucks und zur Objektverarbeitung - Google Patents

Vorrichtung zum Herstellen eines reduzierten Drucks und zur Objektverarbeitung

Info

Publication number
DE69115374T2
DE69115374T2 DE69115374T DE69115374T DE69115374T2 DE 69115374 T2 DE69115374 T2 DE 69115374T2 DE 69115374 T DE69115374 T DE 69115374T DE 69115374 T DE69115374 T DE 69115374T DE 69115374 T2 DE69115374 T2 DE 69115374T2
Authority
DE
Germany
Prior art keywords
producing
reduced pressure
object processing
processing
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69115374T
Other languages
English (en)
Other versions
DE69115374D1 (de
Inventor
Satoshi Kaneko
Taichi Fugita
Toshihisa Nozawa
Yoichi Ueda
Yukimasa Yoshida
Isahiro Hasegawa
Haruo Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokyo Electron Ltd
Original Assignee
Toshiba Corp
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP19246890A external-priority patent/JPH0478134A/ja
Application filed by Toshiba Corp, Tokyo Electron Ltd filed Critical Toshiba Corp
Publication of DE69115374D1 publication Critical patent/DE69115374D1/de
Application granted granted Critical
Publication of DE69115374T2 publication Critical patent/DE69115374T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE69115374T 1990-07-20 1991-07-19 Vorrichtung zum Herstellen eines reduzierten Drucks und zur Objektverarbeitung Expired - Fee Related DE69115374T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP19246790 1990-07-20
JP19246890A JPH0478134A (ja) 1990-07-20 1990-07-20 処理装置

Publications (2)

Publication Number Publication Date
DE69115374D1 DE69115374D1 (de) 1996-01-25
DE69115374T2 true DE69115374T2 (de) 1996-05-30

Family

ID=26507331

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69115374T Expired - Fee Related DE69115374T2 (de) 1990-07-20 1991-07-19 Vorrichtung zum Herstellen eines reduzierten Drucks und zur Objektverarbeitung

Country Status (4)

Country Link
US (1) US5223113A (de)
EP (1) EP0467397B1 (de)
KR (1) KR0151734B1 (de)
DE (1) DE69115374T2 (de)

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US6635853B2 (en) 1909-08-09 2003-10-21 Ibiden Co., Ltd. Hot plate unit
JP4330717B2 (ja) * 1999-08-09 2009-09-16 東京エレクトロン株式会社 ホットプレートユニット及びホットプレートユニットの使用方法
US5376211A (en) * 1990-09-29 1994-12-27 Tokyo Electron Limited Magnetron plasma processing apparatus and processing method
KR100238626B1 (ko) * 1992-07-28 2000-02-01 히가시 데쓰로 플라즈마 처리장치
US5427670A (en) * 1992-12-10 1995-06-27 U.S. Philips Corporation Device for the treatment of substrates at low temperature
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
DE9407482U1 (de) * 1994-05-05 1994-10-06 Leybold Ag Funktionseinrichtung für eine Vakuumanlage für die Behandlung von scheibenförmigen Werkstücken
JP3257328B2 (ja) 1995-03-16 2002-02-18 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
JPH1068094A (ja) * 1996-06-13 1998-03-10 Samsung Electron Co Ltd 遷移金属薄膜用蝕刻ガス混合物およびこれを用いた遷移金属薄膜の蝕刻方法
US6328096B1 (en) * 1997-12-31 2001-12-11 Temptronic Corporation Workpiece chuck
US6416318B1 (en) * 1999-06-16 2002-07-09 Silicon Valley Group, Inc. Process chamber assembly with reflective hot plate and pivoting lid
EP1079416A1 (de) * 1999-08-09 2001-02-28 Ibiden Co., Ltd. Heizplatteneinheit
US20020195201A1 (en) * 2001-06-25 2002-12-26 Emanuel Beer Apparatus and method for thermally isolating a heat chamber
US6800172B2 (en) * 2002-02-22 2004-10-05 Micron Technology, Inc. Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor
US6858264B2 (en) * 2002-04-24 2005-02-22 Micron Technology, Inc. Chemical vapor deposition methods
US6814813B2 (en) 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
JP3972195B2 (ja) * 2002-09-13 2007-09-05 株式会社安川電機 真空用モータ
US6926775B2 (en) * 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
JP4294976B2 (ja) * 2003-02-27 2009-07-15 東京エレクトロン株式会社 基板処理装置
US20040182315A1 (en) * 2003-03-17 2004-09-23 Tokyo Electron Limited Reduced maintenance chemical oxide removal (COR) processing system
US7214274B2 (en) * 2003-03-17 2007-05-08 Tokyo Electron Limited Method and apparatus for thermally insulating adjacent temperature controlled processing chambers
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US7344755B2 (en) 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
JP2005191494A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光装置、デバイスの製造方法
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US20050217799A1 (en) * 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly
US7584942B2 (en) * 2004-03-31 2009-09-08 Micron Technology, Inc. Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers
US8133554B2 (en) 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
KR100631479B1 (ko) * 2004-09-25 2006-10-09 두산디앤디 주식회사 유도 결합 플라즈마 처리장치
US20060144337A1 (en) * 2005-01-06 2006-07-06 Hsien-Che Teng Heater for heating a wafer and method for preventing contamination of the heater
JP2008192802A (ja) * 2007-02-05 2008-08-21 Spansion Llc 半導体製造装置およびその製造方法
US20110180097A1 (en) * 2010-01-27 2011-07-28 Axcelis Technologies, Inc. Thermal isolation assemblies for wafer transport apparatus and methods of use thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
JPS59163826A (ja) * 1983-03-08 1984-09-14 Toshiba Corp ドライエツチング方法
KR910005733B1 (ko) * 1986-01-17 1991-08-02 가부시기가이샤 히다찌 세이사꾸쇼 플라즈마 처리방법 및 장치
JPH0830273B2 (ja) * 1986-07-10 1996-03-27 株式会社東芝 薄膜形成方法及び装置
JPH0834205B2 (ja) * 1986-11-21 1996-03-29 株式会社東芝 ドライエツチング装置
JPS63204726A (ja) * 1987-02-20 1988-08-24 Anelva Corp 真空処理装置
EP0297898B1 (de) * 1987-07-02 1995-10-11 Kabushiki Kaisha Toshiba Verfahren zum Trockenätzen
KR970003885B1 (ko) * 1987-12-25 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 에칭 방법 및 그 장치
JPH01302726A (ja) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd 反応性イオンエッチング装置
JP2512783B2 (ja) * 1988-04-20 1996-07-03 株式会社日立製作所 プラズマエッチング方法及び装置
US5078851A (en) * 1989-07-26 1992-01-07 Kouji Nishihata Low-temperature plasma processor

Also Published As

Publication number Publication date
DE69115374D1 (de) 1996-01-25
EP0467397B1 (de) 1995-12-13
KR0151734B1 (ko) 1998-12-01
KR920003431A (ko) 1992-02-29
US5223113A (en) 1993-06-29
EP0467397A1 (de) 1992-01-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee