KR920001331B1 - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR920001331B1
KR920001331B1 KR1019880007159A KR880007159A KR920001331B1 KR 920001331 B1 KR920001331 B1 KR 920001331B1 KR 1019880007159 A KR1019880007159 A KR 1019880007159A KR 880007159 A KR880007159 A KR 880007159A KR 920001331 B1 KR920001331 B1 KR 920001331B1
Authority
KR
South Korea
Prior art keywords
mos transistors
differential amplifier
amplifier
differential amplifiers
memory device
Prior art date
Application number
KR1019880007159A
Other languages
English (en)
Korean (ko)
Other versions
KR890001096A (ko
Inventor
마사코 오타
유키히토 오와키
겐지 누마타
시게요시 와타나베
츠네아키 후세
후지오 마스오카
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR890001096A publication Critical patent/KR890001096A/ko
Application granted granted Critical
Publication of KR920001331B1 publication Critical patent/KR920001331B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019880007159A 1987-06-15 1988-06-15 반도체기억장치 KR920001331B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP148192 1987-06-15
JP62-148192 1987-06-15
JP14819287 1987-06-15
JP329785 1987-12-28
JP62329785A JP2573272B2 (ja) 1987-06-15 1987-12-28 半導体記憶装置
JP62-329785 1987-12-28

Publications (2)

Publication Number Publication Date
KR890001096A KR890001096A (ko) 1989-03-18
KR920001331B1 true KR920001331B1 (ko) 1992-02-10

Family

ID=15447312

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880007159A KR920001331B1 (ko) 1987-06-15 1988-06-15 반도체기억장치

Country Status (2)

Country Link
JP (1) JP2573272B2 (ja)
KR (1) KR920001331B1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3067060B2 (ja) * 1992-10-20 2000-07-17 三洋電機株式会社 半導体記憶装置
KR950014255B1 (ko) * 1992-12-31 1995-11-23 현대전자산업주식회사 고속동작을 위한 데이타 패스 구조를 갖는 반도체 메모리소자
KR102204984B1 (ko) * 2020-02-20 2021-01-19 우석대학교 산학협력단 친환경 쌀을 이용한 가루식혜 및 그 제조방법
KR102425948B1 (ko) * 2020-03-12 2022-07-26 우석대학교 산학협력단 가루식혜 및 그 제조방법
KR102427839B1 (ko) * 2020-03-12 2022-07-29 우석대학교 산학협력단 가루식혜 및 그 제조방법

Also Published As

Publication number Publication date
KR890001096A (ko) 1989-03-18
JP2573272B2 (ja) 1997-01-22
JPH0198188A (ja) 1989-04-17

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