KR910015040A - 두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터 - Google Patents

두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터 Download PDF

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KR910015040A
KR910015040A KR1019910001599A KR910001599A KR910015040A KR 910015040 A KR910015040 A KR 910015040A KR 1019910001599 A KR1019910001599 A KR 1019910001599A KR 910001599 A KR910001599 A KR 910001599A KR 910015040 A KR910015040 A KR 910015040A
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South Korea
Prior art keywords
terminals
high frequency
emitter
lead frame
emitter terminals
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KR1019910001599A
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English (en)
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한스 하스가서
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발도르프. 피켄셔
지멘스 악티엔게젤샤프트
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Publication of KR910015040A publication Critical patent/KR910015040A/ko

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    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)

Abstract

내용 없음

Description

두개의 에미터 단자를 갖는 고주파수 SMD 트랜지스터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제12도 내지 제13도는 각각 본 발명의 실시예의 평면도.

Claims (5)

  1. 제1 및 제2 에미터 접점을 포함하는 고주파수 트랜지스터로 구성되는 반도체 칩; 두개의 에미터 단자를 포함하는 다수의 단자로 구성되며 상기 제1 및 제2 에미터 단자가 함께 연결되는 동일판 구성의 리드 프레임; 및 상기 제1 및 제2 에미터 접점과 상기 동일판 리드 프레임의 상기 두개 에미터 단자 사이에 제1 및 제2 전기적 연결로 이루어지는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
  2. 제1항에 있어서, 상기 리드 프레임은 SOT-143의 구성으로 배열된 상기 다수의 단자로 구성되는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
  3. 제1항에 있어서, 상기 구성부분은 사각형의 덮개로 구성되고; 상기 두개의 에미터 단자는 각각의 대각선으로 마주보는 장소에서 상기 구성부분의 상기 덮개로부터 연장되는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
  4. 제1항에 있어서, 상기 구성부분은 사각형의 덮개로 구성되고; 두개의 에미터 단자는 상기 구성부분의 상기 사각형 덮개의 동일한 긴쪽상에서 서로 떨어져 상기 덮개로부터 연장되는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
  5. 제1항에 있어서, 상기 리드 프레임은 상기 두개의 에머티 단자를 전기적 및 기계적으로 연결되는 중심 웨브로 구성되는 것을 특징으로 하는 고주파수 SMD 트랜지스터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910001599A 1990-01-31 1991-01-31 두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터 KR910015040A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP90101915.8 1990-01-31
EP90101915A EP0439652A1 (de) 1990-01-31 1990-01-31 Hochfrequenz-SMD-Transistor mit zwei Emitteranschlüssen

Publications (1)

Publication Number Publication Date
KR910015040A true KR910015040A (ko) 1991-08-31

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ID=8203566

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Application Number Title Priority Date Filing Date
KR1019910001599A KR910015040A (ko) 1990-01-31 1991-01-31 두개의 에미터 단자를 갖는 고주파수 smd 트랜지스터

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EP (1) EP0439652A1 (ko)
KR (1) KR910015040A (ko)
CA (1) CA2035214A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK0602278T3 (da) * 1992-12-18 1998-09-28 Siemens Ag Bipolar højfrekvenstransistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6604964A (ko) * 1966-04-14 1967-10-16
US3518504A (en) * 1966-11-15 1970-06-30 Int Standard Electric Corp Transistor with lead-in electrodes
US4556896A (en) * 1982-08-30 1985-12-03 International Rectifier Corporation Lead frame structure

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EP0439652A1 (de) 1991-08-07
CA2035214A1 (en) 1991-08-01

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