KR910012348A - 매우 높은 열전도율을 가진 단결정 다이아몬드 - Google Patents
매우 높은 열전도율을 가진 단결정 다이아몬드 Download PDFInfo
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- KR910012348A KR910012348A KR1019900020262A KR900020262A KR910012348A KR 910012348 A KR910012348 A KR 910012348A KR 1019900020262 A KR1019900020262 A KR 1019900020262A KR 900020262 A KR900020262 A KR 900020262A KR 910012348 A KR910012348 A KR 910012348A
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- diamond
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- single crystal
- crystal diamond
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/25—Diamond
- C01B32/26—Preparation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/061—Graphite
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/062—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0625—Carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0655—Diamond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/0685—Crystal sintering
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Optical Filters (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (29)
- (A) 동위원소적으로 순수한 탄소-12 또는 탄소-13으로 이루어진 다이아몬드를 제조하는 단계 : 및 (B) 상기 다이아몬드를 금속성 촉매-용매 재료를 통해 고압하에 다이아몬드 씨드(seed) 결정을 함유하는 영역으로 확산시킴으로써 단결정 다이아몬드로 전환시키는 단계를 포함하는, 높은 동위원소 순도를 가진 단결정 다이아몬드의 제조방법.
- 제1항에 있어서, 탄소가 탄소-12인 방법.
- 제2항에 있어서, 단계(A)의 생성물을 분쇄시키는 방법.
- 제3항에 있어서, 탄소가 99.2% 이상 동위원소적으로 순수한 방법.
- 제4항에 있어서, 단계(A)의 다이아몬드를 화학적 증착법에 의해 제조하는 방법.
- 제5항에 있어서, 단계(A)에 사용된 장비가 실질적으로 탄소를 용해시킬 수 없는 재료로 구성된 방법.
- 제4항에 있어서, 분쇄에 의해 수득된 입경이 그릿 다이아몬드의 입경인 방법.
- 제7항에 있어서, 단계(A)를 최소한 2000℃의 필라멘트 온도, 900 내지 1000℃ 범위의 기재 온도 및 약 10torr의 압력에서 수행하는 방법.
- 제8항에 있어서, 필라멘트가 텅스텐으로 이루어지고, 기재가 몰리브덴인 방법.
- 제6항에 있어서, 탄소가 99.9% 이상 동위원소적으로 순수한 방법.
- 제10항에 있어서, 단계(B)에 사용된 촉매-용매 재료가 철-알루미늄 혼합물인 방법.
- 제11항에 있어서, 단계(B)에 전환시킬 재료와 침착 영역간에 네가티브 온도 구배를 유지시키는 방법.
- 제12항에 있어서, 단계(B)에 사용된 촉매-용매 재료가 철 95중량%와 알루미늄 5중량%의 혼합물인 방법.
- 제13항에 있어서, 온도 구배가 약 50℃인 방법.
- 제12항에 있어서, 단계(B)에서의 압력이 50,000 내지 60,000 기압 범위이고, 온도가 약 1300 내지 1500℃ 범위인 방법.
- 제15항에 있어서, 씨드 결정이 정상적인 동위원소 분포를 가진 단결정 다이아몬드인 방법.
- 제16항에 있어서, 씨드 결정에 기인된 생성물 다이아몬드의 부분을 연마에 의해 제거하는 방법.
- 99.2중량% 이상 동위원소적으로 순수한 탄소-12 또는 탄소-13으로 이루어지고 300°K에서의 열 전도율이 천연 IIA 유형 다이아몬드의 열 전도율 보다 10% 이상 더 큰 단결정 다이아몬드.
- 제18항에 있어서, 탄소-12로 이루어진 다이아몬드.
- 열전도체로서의 제18항의 다이아몬드와 접촉하는 열-발생원을 포함하는 제품.
- 제18항의 다이아몬드를 포함하는 연마 제품.
- 핀홀(pinhole) 구멍을 가진 제18항의 다이아몬드를 포함하는 광-여과용 제품.
- 99.5중량% 이상 동위원소적으로 순수한 탄소-12 또는 탄소-13으로 이루어지고 300°K에서의 열전도율이 천연IIA 유형 다이아몬드의 열 전도율 보다 25% 이상 더 큰 단결정 다이아몬드.
- 99.9중량% 이상 동위원소적으로 순수한 탄소-12 또는 탄소-13으로 이루어지고 300°K에서의 열전도율이 천연IIA 유형 다이아몬드의 열 전도율 보다 40% 이상 더 큰 단결정 다이아몬드.
- 제1항의 방법에 의해 제조된 단결정 다이아몬드.
- 제2항의 방법에 의해 제조된 단결정 다이아몬드.
- 제4항의 방법에 의해 제조된 단결정 다이아몬드.
- 제10항의 방법에 의해 제조된 단결정 다이아몬드.
- 제17항의 방법에 의해 제조된 단결정 다이아몬드.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44846989A | 1989-12-11 | 1989-12-11 | |
US448,469 | 1989-12-11 | ||
US53637190A | 1990-06-11 | 1990-06-11 | |
US448469 | 1990-06-11 | ||
US536371 | 1990-06-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910012348A true KR910012348A (ko) | 1991-08-07 |
KR930007855B1 KR930007855B1 (ko) | 1993-08-20 |
Family
ID=27035375
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900020262A KR930007855B1 (ko) | 1989-12-11 | 1990-12-10 | 매우 높은 열전도율을 가진 단결정 다이아몬드 |
Country Status (13)
Country | Link |
---|---|
US (1) | US5419276A (ko) |
JP (1) | JPH0671549B2 (ko) |
KR (1) | KR930007855B1 (ko) |
CN (1) | CN1052340A (ko) |
AU (1) | AU634601B2 (ko) |
BE (1) | BE1004218A3 (ko) |
BR (1) | BR9006262A (ko) |
DE (1) | DE4038190C2 (ko) |
FR (1) | FR2655639B1 (ko) |
GB (1) | GB2239011B (ko) |
IE (1) | IE904441A1 (ko) |
NL (1) | NL9002600A (ko) |
SE (1) | SE9003939L (ko) |
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US4034066A (en) * | 1973-11-02 | 1977-07-05 | General Electric Company | Method and high pressure reaction vessel for quality control of diamond growth on diamond seed |
JPS5927754B2 (ja) * | 1981-12-17 | 1984-07-07 | 科学技術庁無機材質研究所長 | ダイヤモンドの合成法 |
US4434188A (en) * | 1981-12-17 | 1984-02-28 | National Institute For Researches In Inorganic Materials | Method for synthesizing diamond |
US4544540A (en) * | 1982-06-25 | 1985-10-01 | Sumitomo Electric Industries, Ltd. | Diamond single crystals, a process of manufacturing and tools for using same |
US4617181A (en) * | 1983-07-01 | 1986-10-14 | Sumitomo Electric Industries, Ltd. | Synthetic diamond heat sink |
JPS60112699A (ja) * | 1983-11-24 | 1985-06-19 | Nec Corp | ダイヤモンドの製造方法 |
JPS60118694A (ja) * | 1983-11-29 | 1985-06-26 | Mitsubishi Metal Corp | ダイヤモンドの低圧合成法 |
JPS60121271A (ja) * | 1983-12-01 | 1985-06-28 | Mitsubishi Metal Corp | 超硬質被覆層の形成方法 |
EP0206820A3 (en) * | 1985-06-27 | 1987-10-28 | De Beers Industrial Diamond Division (Proprietary) Limited | Diamond synthesis |
DE3690606T (ko) * | 1985-11-25 | 1988-08-25 |
-
1990
- 1990-11-16 AU AU66725/90A patent/AU634601B2/en not_active Ceased
- 1990-11-28 NL NL9002600A patent/NL9002600A/nl not_active Application Discontinuation
- 1990-11-30 DE DE4038190A patent/DE4038190C2/de not_active Expired - Fee Related
- 1990-12-06 GB GB9026610A patent/GB2239011B/en not_active Expired - Fee Related
- 1990-12-07 BE BE9001166A patent/BE1004218A3/fr not_active IP Right Cessation
- 1990-12-07 FR FR9015372A patent/FR2655639B1/fr not_active Expired - Fee Related
- 1990-12-10 KR KR1019900020262A patent/KR930007855B1/ko not_active IP Right Cessation
- 1990-12-10 SE SE9003939A patent/SE9003939L/xx not_active Application Discontinuation
- 1990-12-10 JP JP2407185A patent/JPH0671549B2/ja not_active Expired - Lifetime
- 1990-12-10 IE IE444190A patent/IE904441A1/en unknown
- 1990-12-10 BR BR909006262A patent/BR9006262A/pt not_active Application Discontinuation
- 1990-12-11 CN CN90109930A patent/CN1052340A/zh active Pending
-
1993
- 1993-12-06 US US08/163,608 patent/US5419276A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH04108532A (ja) | 1992-04-09 |
BE1004218A3 (fr) | 1992-10-13 |
AU634601B2 (en) | 1993-02-25 |
DE4038190C2 (de) | 1994-03-10 |
SE9003939L (sv) | 1991-06-12 |
KR930007855B1 (ko) | 1993-08-20 |
AU6672590A (en) | 1991-06-13 |
FR2655639B1 (fr) | 1993-02-19 |
GB2239011A (en) | 1991-06-19 |
BR9006262A (pt) | 1991-09-24 |
IE904441A1 (en) | 1991-06-19 |
US5419276A (en) | 1995-05-30 |
NL9002600A (nl) | 1991-07-01 |
SE9003939D0 (sv) | 1990-12-10 |
CN1052340A (zh) | 1991-06-19 |
DE4038190A1 (de) | 1991-06-13 |
FR2655639A1 (fr) | 1991-06-14 |
GB2239011B (en) | 1993-09-15 |
GB9026610D0 (en) | 1991-01-23 |
JPH0671549B2 (ja) | 1994-09-14 |
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