KR910007169A - Thin film EL device and its manufacturing method - Google Patents

Thin film EL device and its manufacturing method Download PDF

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Publication number
KR910007169A
KR910007169A KR1019890012685A KR890012685A KR910007169A KR 910007169 A KR910007169 A KR 910007169A KR 1019890012685 A KR1019890012685 A KR 1019890012685A KR 890012685 A KR890012685 A KR 890012685A KR 910007169 A KR910007169 A KR 910007169A
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KR
South Korea
Prior art keywords
insulating layer
light emitting
layer
emitting layer
film
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Application number
KR1019890012685A
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Korean (ko)
Inventor
정경득
윤태용
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인헌조
주식회사 금성사
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Priority to KR1019890012685A priority Critical patent/KR910007169A/en
Publication of KR910007169A publication Critical patent/KR910007169A/en

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Abstract

내용 없음No content

Description

박막 EL소자와 그 제조방법Thin film EL device and manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 2 도는 본 발명의 박막 EL소자의 구성도.2 is a block diagram of a thin film EL device of the present invention.

제 3도는 본 발명의 다른 실시예를 나타낸 구성도.3 is a block diagram showing another embodiment of the present invention.

Claims (3)

기판(1)위에 투명전극(2)과 제 1 절연층(3)을 형성하고 이 제 1 절연층(3)위에는 Ta2O5막(7)을 증착한 후 발광층(4)과 제 2 절연층(5) 및 배면전극(6)을 순차적층하여서됨을 특징으로 하는 박막 EL소자.A transparent electrode 2 and a first insulating layer 3 are formed on the substrate 1, and a Ta 2 O 5 film 7 is deposited on the first insulating layer 3, and then the light emitting layer 4 and the second insulating layer are deposited. A thin film EL element characterized in that the layer 5 and the back electrode 6 are sequentially layered. 제1항에 있어서, 발광층(제1발광층(4a)과 제2발광층(4b) 사이에 버퍼층(8)을 삽입시켜서 됨을 특징으로 하는 박막 EL의 소자.A device according to claim 1, wherein a buffer layer (8) is inserted between the light emitting layer (the first light emitting layer (4a) and the second light emitting layer (4b). 기판(1)위에 투명전극(2)과 제 1 절연층(3) 그리고 발광층(4)과 제 2 절연층 (5) 및 배면전극(6)을 순차적으로 형성하되 상기 제 1 절연층(3)위에 결정성이 양호한 Ta2O5막(7)을 Ta 타켓트를 이용하여 반응 가스로서 Ar,O2를 주입한 후 기판 온도 200℃에서 리액티브 스파터링 방법으로 증착함을 특징으로 하는 박막 EL소자 제조방법.A transparent electrode 2, a first insulating layer 3, a light emitting layer 4, a second insulating layer 5, and a back electrode 6 are sequentially formed on the substrate 1, but the first insulating layer 3 is formed. A thin-film EL having a good crystallinity Ta 2 O 5 film 7 deposited thereon by injecting Ar, O 2 as a reaction gas using a Ta target and reacting at a substrate temperature of 200 ° C. by a reactive spattering method. Device manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890012685A 1989-09-01 1989-09-01 Thin film EL device and its manufacturing method KR910007169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890012685A KR910007169A (en) 1989-09-01 1989-09-01 Thin film EL device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890012685A KR910007169A (en) 1989-09-01 1989-09-01 Thin film EL device and its manufacturing method

Publications (1)

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KR910007169A true KR910007169A (en) 1991-04-30

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KR1019890012685A KR910007169A (en) 1989-09-01 1989-09-01 Thin film EL device and its manufacturing method

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100373320B1 (en) * 1999-12-23 2003-02-25 한국전자통신연구원 method for fabricting AC driving type electroluminescent devices using Ta2O5 layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100373320B1 (en) * 1999-12-23 2003-02-25 한국전자통신연구원 method for fabricting AC driving type electroluminescent devices using Ta2O5 layer

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