KR900015579A - Manufacturing method of thin film EL element - Google Patents

Manufacturing method of thin film EL element Download PDF

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Publication number
KR900015579A
KR900015579A KR1019890004290A KR890004290A KR900015579A KR 900015579 A KR900015579 A KR 900015579A KR 1019890004290 A KR1019890004290 A KR 1019890004290A KR 890004290 A KR890004290 A KR 890004290A KR 900015579 A KR900015579 A KR 900015579A
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KR
South Korea
Prior art keywords
manufacturing
thin film
doped
insulating layer
gas
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Application number
KR1019890004290A
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Korean (ko)
Inventor
류재화
정경득
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이헌조
주식회사 금성사
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Publication date
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Priority to KR1019890004290A priority Critical patent/KR900015579A/en
Publication of KR900015579A publication Critical patent/KR900015579A/en

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Abstract

내용 없음.No content.

Description

박막이엘 소자의 제조방법Manufacturing method of thin film EL element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 일반적인 박막 이엘 소자의 단면도, 제2도 및 제3도는 본 발명 박막 이엘 소자의 단면도.1 is a cross-sectional view of a general thin film EL element, and FIG. 2 and FIG. 3 are a cross-sectional view of the thin film EL element of the present invention.

Claims (2)

투명기판(11)상부에 투명전극(12)을 형성시킨후, SiO2/TaO5를 Si, Ta타깃트롤 이용하여 반응성 스퍼터링법으로 Ar+O2가스를 주입시켜 제1절연층(13a)(13a')을 형성시키고, 스퍼터링법을 이용하여 6000Å정도의 두께로 발광층(14)을 형성한 후 Ta 타깃트를 이용하여 Ar+N2가스를 주입하여 광흡수층(15)을 형성시키고, 오퍼레이팅가스를 Ar+O2로 연속변화시켜 Ta2O5로 된 제2절연층(13b)고, SiO2로 된 제2절연층(13b')을 증착시키며, Al를 열증착 및 스퍼터링을 이용하여 배면전극(16)을 형성하는 과정으로 이루어지는 것을 특징으로 하는 박막 이엘소자의 제조방법.After the transparent electrode 12 is formed on the transparent substrate 11, Ar + O 2 gas is injected by reactive sputtering using SiO 2 / TaO 5 using Si and Ta target trawls to form the first insulating layer 13a ( 13a '), the light emitting layer 14 is formed to a thickness of about 6000 mV by the sputtering method, and then a light absorbing layer 15 is formed by injecting Ar + N 2 gas using a Ta target to form an operating gas. Is continuously changed to Ar + O 2 to form a second insulating layer 13b made of Ta 2 O 5 , and a second insulating layer 13b ′ made of SiO 2 is deposited, and Al is formed by thermal deposition and sputtering. A method of manufacturing a thin film EL element, comprising the process of forming an electrode (16). 제1항의 발광층(14) 제조방법에 있어서, ZnS:Mn에 0.5mol%의 Mn을 도핑한 발광체내의 전면에 걸쳐 Al이나 In 또는 Ga을 도핑하여 가입한 다음 800℃로 신터링한 것을 전자빔법으로 형성하는 것을 특징으로 하는 박막 이엘 소자의 제조방법.In the method of manufacturing the light emitting layer 14 according to claim 1, ZnS: Mn is doped with Al, In, or Ga over the entire surface of the light-doped member doped with 0.5 mol% of Mn, and then sintered at 800 ° C. by electron beam method. Method for manufacturing a thin film EL device, characterized in that the formation. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890004290A 1989-03-31 1989-03-31 Manufacturing method of thin film EL element KR900015579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890004290A KR900015579A (en) 1989-03-31 1989-03-31 Manufacturing method of thin film EL element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890004290A KR900015579A (en) 1989-03-31 1989-03-31 Manufacturing method of thin film EL element

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KR900015579A true KR900015579A (en) 1990-10-27

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KR1019890004290A KR900015579A (en) 1989-03-31 1989-03-31 Manufacturing method of thin film EL element

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100786231B1 (en) * 2006-04-26 2007-12-17 두산메카텍 주식회사 Evaporation apparatus of cathode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100786231B1 (en) * 2006-04-26 2007-12-17 두산메카텍 주식회사 Evaporation apparatus of cathode

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