KR930022919A - Thin film EL element - Google Patents

Thin film EL element Download PDF

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Publication number
KR930022919A
KR930022919A KR1019920007264A KR920007264A KR930022919A KR 930022919 A KR930022919 A KR 930022919A KR 1019920007264 A KR1019920007264 A KR 1019920007264A KR 920007264 A KR920007264 A KR 920007264A KR 930022919 A KR930022919 A KR 930022919A
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KR
South Korea
Prior art keywords
insulating layer
thin film
deposited
light emitting
electrode
Prior art date
Application number
KR1019920007264A
Other languages
Korean (ko)
Inventor
정재상
Original Assignee
이헌조
주식회사 금성사
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Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Publication of KR930022919A publication Critical patent/KR930022919A/en

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Abstract

본 발명은 박막 EL 소자에 관한 것으로, 유리기판(8)/투명전극(9)/제1 절연층(10)(11)/발광층(12)/제2 절연층(13)(14)/금속전극(15)/보호막(16)을 순차적으로 증착하여 구성되는 EL 박막 소자에서 상기 제2 절연층(13)(14)을 SiON/Al2O3의 2중 구조로 제작하고 Al전극위에 Al2O3보호막을 증착하여 구성함으로써, 외부 습기가 상기 제2 절연층의 핀홀을 통해 절연층/발광층 계면으로 침투하는 것을 방지하는 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film EL element, and includes a glass substrate (8) / transparent electrode (9) / first insulating layer (10) (11) / light emitting layer (12) / second insulating layer (13) (14) / metal In the EL thin film element formed by sequentially depositing the electrode 15 / protective film 16, the second insulating layers 13 and 14 are fabricated in a double structure of SiON / Al 2 O 3 and Al 2 on the Al electrode. The deposition of the O 3 protective film prevents external moisture from penetrating into the insulating layer / light emitting layer interface through the pinhole of the second insulating layer.

Description

박막 EL소자Thin film EL element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 EL 소자 구조도, 제3도는 본 발명의 EL소자 유전층 비교표.2 is a structure diagram of the EL device of the present invention, and FIG. 3 is a comparison table of the EL device dielectric layers of the present invention.

Claims (3)

평면 유리기판(8)위에 증착된 ITO투명전극(9), 상기 투명전극위에 SiAlON과 Si3N4를 스퍼터링 방법으로 증착된 제1 절연층(10)(11)과, 상기 제1 절연층위에 E빔 증착방법으로 성막된 ZnS계통의 발광층(12)과, 상기 발광층 위의 SiON과 SiAlON을 스퍼터링 방법으로 증착된 제2 절연층(13)(14)과, 상기 제2 절연층위에 증착된 Al계통의 금속전극(15)과, 상기 금속전극위에 증착된 Al2O3보호막(16)을 포함하여 이루어진 것을 특징으로 하는 박막 EL 소자.ITO transparent electrode 9 deposited on the flat glass substrate 8, first insulating layers 10 and 11 deposited on the transparent electrode by the sputtering method of SiAlON and Si 3 N 4 , and on the first insulating layer A ZnS-based light emitting layer 12 formed by an E-beam deposition method, a second insulating layer 13 and 14 deposited by sputtering SiON and SiAlON on the light emitting layer, and Al deposited on the second insulating layer. A thin film EL device comprising a metal electrode (15) of a system and an Al 2 O 3 protective film (16) deposited on the metal electrode. 제1항에 있어서, 상기 제2 절연층(13)(14)은 SiON이 2000Å으로 증착되고, SiAlON이 1500Å으로 증착된 것을 특징으로 하는 박막 EL 소자.2. The thin film EL device according to claim 1, wherein the second insulating layer (13) is deposited with SiON at 2000 GPa and with SiAlON at 1500 GPa. 제1항에 있어서, 상기 보호막(16)은 Al2O3를 2000Å두께로 증착한 것을 특징으로 하는 박막 EL 소자.The thin film EL device according to claim 1, wherein the protective film (16) is formed by depositing Al 2 O 3 at a thickness of 2000 GPa. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920007264A 1992-04-29 Thin film EL element KR930022919A (en)

Publications (1)

Publication Number Publication Date
KR930022919A true KR930022919A (en) 1993-11-24

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