KR930022919A - Thin film EL element - Google Patents
Thin film EL element Download PDFInfo
- Publication number
- KR930022919A KR930022919A KR1019920007264A KR920007264A KR930022919A KR 930022919 A KR930022919 A KR 930022919A KR 1019920007264 A KR1019920007264 A KR 1019920007264A KR 920007264 A KR920007264 A KR 920007264A KR 930022919 A KR930022919 A KR 930022919A
- Authority
- KR
- South Korea
- Prior art keywords
- insulating layer
- thin film
- deposited
- light emitting
- electrode
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract 6
- 239000010408 film Substances 0.000 claims abstract 4
- 230000001681 protective Effects 0.000 claims abstract 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract 3
- 229910020160 SiON Inorganic materials 0.000 claims abstract 3
- 238000000151 deposition Methods 0.000 claims abstract 3
- 239000002184 metal Substances 0.000 claims abstract 3
- 239000000758 substrate Substances 0.000 claims abstract 2
- 229910003564 SiAlON Inorganic materials 0.000 claims 3
- 238000004544 sputter deposition Methods 0.000 claims 2
- 239000005357 flat glass Substances 0.000 claims 1
- 229910052950 sphalerite Inorganic materials 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000000149 penetrating Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 1
Abstract
본 발명은 박막 EL 소자에 관한 것으로, 유리기판(8)/투명전극(9)/제1 절연층(10)(11)/발광층(12)/제2 절연층(13)(14)/금속전극(15)/보호막(16)을 순차적으로 증착하여 구성되는 EL 박막 소자에서 상기 제2 절연층(13)(14)을 SiON/Al2O3의 2중 구조로 제작하고 Al전극위에 Al2O3보호막을 증착하여 구성함으로써, 외부 습기가 상기 제2 절연층의 핀홀을 통해 절연층/발광층 계면으로 침투하는 것을 방지하는 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film EL element, and includes a glass substrate (8) / transparent electrode (9) / first insulating layer (10) (11) / light emitting layer (12) / second insulating layer (13) (14) / metal In the EL thin film element formed by sequentially depositing the electrode 15 / protective film 16, the second insulating layers 13 and 14 are fabricated in a double structure of SiON / Al 2 O 3 and Al 2 on the Al electrode. The deposition of the O 3 protective film prevents external moisture from penetrating into the insulating layer / light emitting layer interface through the pinhole of the second insulating layer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 EL 소자 구조도, 제3도는 본 발명의 EL소자 유전층 비교표.2 is a structure diagram of the EL device of the present invention, and FIG. 3 is a comparison table of the EL device dielectric layers of the present invention.
Claims (3)
Publications (1)
Publication Number | Publication Date |
---|---|
KR930022919A true KR930022919A (en) | 1993-11-24 |
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