KR940019189A

KR940019189A - Thin film EL display device and manufacturing method thereof

Info

Publication number: KR940019189A
Application number: KR1019930000930A
Authority: KR
Inventors: 윤태용
Original assignee: 이헌조; 주식회사 금성사
Priority date: 1993-01-26
Filing date: 1993-01-26
Publication date: 1994-08-19
Also published as: KR950013668B1

Abstract

본 발명은 박막 전계 발광 표시소자의 제조 방법에 관한 것으로, 절연층 대신에 높은 유전상수와 절연파괴 전압을 갖는 TaAlO 유전층을 스퍼터링(sputterling) 방법으로 증착하여 문턱 전압을 낮추고 전압의 증가에 따른 휘도의 변화를 급격히 증가시키며 높은 절연 내압을 갖는 박막 전계 발광표시소자의 제조방법을 제공함에 그 목적이 있다. 본 발명은 상기 목적을 달성하기 위하여 투명 유리기판(1)상에 투명전극(2)을 증착한 후 식각하여 다수개의 투명전극(2)선을 형성하고, 상기 투명전극(2)선위에 제1 TaAlO 유전층(7)을 증착하며 발광측(4)을 증착하후 상기 발광층(4)에 제2 TaAlO 유전층(7)을 증착하고, 상기 제2 TaAlO 유전층(7)에 배면전극(6)을 증착하며 상기 투명전극(2)선과 교차되는 방향으로 다수개의 배면전극(6)선을 형성하는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a thin film electroluminescent display device, wherein a TaAlO dielectric layer having a high dielectric constant and dielectric breakdown voltage is deposited by sputtering instead of an insulating layer, thereby lowering a threshold voltage and increasing luminance according to an increase in voltage. It is an object of the present invention to provide a method of manufacturing a thin film electroluminescent display device having a rapid increase in change and having a high dielectric breakdown voltage. In order to achieve the above object, the present invention forms a plurality of transparent electrode (2) lines by depositing and then etching the transparent electrode (2) on the transparent glass substrate (1), and the first on the transparent electrode (2) line After depositing the TaAlO dielectric layer 7 and depositing the light emitting side 4, the second TaAlO dielectric layer 7 is deposited on the light emitting layer 4, and the back electrode 6 is deposited on the second TaAlO dielectric layer 7. A plurality of back electrode 6 lines are formed in a direction crossing the transparent electrode 2 line.

Description

Thin film EL display device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래 기술의 박막전계 발광 표시소자의 제조 방법을 나타낸 공정 순서도 제2도는 본 발명의 박막전계 발광 표시소자를 나타내는 단면도.1 is a process flowchart showing a method for manufacturing a thin film electroluminescent display device of the prior art. FIG. 2 is a cross-sectional view showing a thin film electroluminescent display device of the present invention.

Claims

After the transparent electrode 2 is deposited on the transparent glass substrate 1, the first process is performed to form a plurality of transparent electrode 2 lines by etching, thereby forming a first TaAlO dielectric layer 8 on the transparent electrode 2 line. In the second step of depositing, the second TaAlO dielectric layer 7 is deposited, the light emitting layer 4 is deposited, and the back electrode 6 is deposited on the second TaAlO dielectric layer 8 on the light emitting layer 4, and then the transparent electrode is deposited. And (2) a third step of forming a plurality of back electrode (6) lines by etching in a direction intersecting with the line (2).

The method of claim 1, wherein the first and second TaAlO dielectric layers (8) are formed to have a thickness of about 3000 μs in a reactive sputtering manner.

After the deposition on the organic substrate 1, the transparent electrode (2) formed by etching, the first TaAlO dielectric layer (7) and the light emitting layer (4) deposited on the transparent electrode 2, and deposited on the light emitting layer (4) And a back electrode (6) deposited on the second TaAlO dielectric layer (8) and then etched in a direction intersecting the transparent electrode.

※ Note: The disclosure is based on the initial application.