KR930003445A - Structure of Thin Film EL Device - Google Patents

Structure of Thin Film EL Device Download PDF

Info

Publication number
KR930003445A
KR930003445A KR1019910011318A KR910011318A KR930003445A KR 930003445 A KR930003445 A KR 930003445A KR 1019910011318 A KR1019910011318 A KR 1019910011318A KR 910011318 A KR910011318 A KR 910011318A KR 930003445 A KR930003445 A KR 930003445A
Authority
KR
South Korea
Prior art keywords
thin film
kpa
smf
zns
light emitting
Prior art date
Application number
KR1019910011318A
Other languages
Korean (ko)
Inventor
정경득
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019910011318A priority Critical patent/KR930003445A/en
Publication of KR930003445A publication Critical patent/KR930003445A/en

Links

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

내용 없음.No content.

Description

박막 EL 소자의 구조Structure of Thin Film EL Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 박막 EL 소자의 구성도.2 is a block diagram of a thin film EL device according to the present invention.

Claims (5)

투명 유리기판에 순차적으로 투명전극(2), 제1절연층, 발광층(4), 제2절연층(5), 배면전극(6)을 적층한 박막 EL소자에 있어서, 상기 발광층(4)을 ZnS;SmF3과 Y2O3: Eu를 교번으로 적층하여 제조하는 것을 특징으로 하는 박막 EL 소자의 구조.In the thin film EL device in which a transparent electrode 2, a first insulating layer, a light emitting layer 4, a second insulating layer 5, and a back electrode 6 are sequentially stacked on a transparent glass substrate, the light emitting layer 4 is formed. ZnS; SmF 3 and Y 2 O 3 : The structure of a thin film EL device characterized in that it is produced by alternately stacking. 제1항에 있어서, ZnS : SmF3과 Y2O3: Eu는 동일 챔버내에서 ZnS: SmF3은 저항가열법으로 증착하고, Y2O3: Eu는 전자빔 증착법으로 증착하는 것을 특징으로 하는 박막 EL 소자의 구조.The method of claim 1, wherein ZnS: SmF 3 and Y 2 O 3 : Eu in the same chamber, ZnS: SmF 3 is deposited by resistance heating method, Y 2 O 3 : Eu is deposited by electron beam deposition method Structure of thin film EL element. 제1항에 있어서, ZnS : SmF3단층막의 두께는 1000Å-2000Å으로 하는 것을 특징으로 하는 박막 EL소자의 구조.The structure of the thin film EL device according to claim 1, wherein the thickness of the ZnS: SmF 3 single layer film is 1000 kPa-2000 kPa. 제1항에 있어서, Y2O3: Eu단층막의 두께는 500Å-1000Å으로 하는 것을 특징으로 하는 박막 EL 소자의 구조.The structure of the thin film EL device according to claim 1, wherein the thickness of the Y 2 O 3 : Eu single layer film is 500 kPa-1000 kPa. 제1항에 있어서, 발광층(4)의 두께는 6000Å-15000Å로 하는 것을 특징으로 하는 박막 EL 소자의 구조.The structure of the thin film EL element according to claim 1, wherein the thickness of the light emitting layer (4) is 6000 kPa-15000 kPa. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910011318A 1991-07-04 1991-07-04 Structure of Thin Film EL Device KR930003445A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910011318A KR930003445A (en) 1991-07-04 1991-07-04 Structure of Thin Film EL Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910011318A KR930003445A (en) 1991-07-04 1991-07-04 Structure of Thin Film EL Device

Publications (1)

Publication Number Publication Date
KR930003445A true KR930003445A (en) 1993-02-24

Family

ID=67440637

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910011318A KR930003445A (en) 1991-07-04 1991-07-04 Structure of Thin Film EL Device

Country Status (1)

Country Link
KR (1) KR930003445A (en)

Similar Documents

Publication Publication Date Title
KR960028705A (en) Color electroluminescent (EL) device and its manufacturing method
KR930003445A (en) Structure of Thin Film EL Device
KR880004341A (en) Thin film EL device and its manufacturing method
KR910007386A (en) Manufacturing Method of Electroluminescent Device
KR920003811A (en) Thin film EL display device and manufacturing method thereof
KR950021817A (en) Multilayer electroluminescent device
KR920704545A (en) Thin film EL element
EP0327355B1 (en) Thin film electroluminescent device
KR920014363A (en) Manufacturing method of thin film EL device
KR950012782A (en) Thin film electroluminescent device
KR930003427A (en) Structure of Thin Film EL Device
KR910004067A (en) Thin film EL display device and manufacturing method thereof
KR910016222A (en) EL element and manufacturing method thereof
KR910007169A (en) Thin film EL device and its manufacturing method
KR930022919A (en) Thin film EL element
KR920704544A (en) Thin film EL element
KR910013998A (en) Method of forming insulating film of thin film EL display device
KR920014365A (en) Manufacturing method of thin film EL device
KR930021030A (en) Manufacturing method of thin film EL display device
KR930015968A (en) Structure and Manufacturing Method of Full Color Thin Film EL Devices
KR940020866A (en) Structure and Manufacturing Method of Full Color Thin Film EL Display Element
KR960020621A (en) Electroluminescent element
KR910014001A (en) EL display element
KR880004586A (en) EL device manufacturing method
KR910014000A (en) Manufacturing method of electroluminescent pamp

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination