KR920003811A - Thin film EL display device and manufacturing method thereof - Google Patents

Thin film EL display device and manufacturing method thereof Download PDF

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Publication number
KR920003811A
KR920003811A KR1019900010414A KR900010414A KR920003811A KR 920003811 A KR920003811 A KR 920003811A KR 1019900010414 A KR1019900010414 A KR 1019900010414A KR 900010414 A KR900010414 A KR 900010414A KR 920003811 A KR920003811 A KR 920003811A
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KR
South Korea
Prior art keywords
thin film
layer
display device
insulating layer
back electrode
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Application number
KR1019900010414A
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Korean (ko)
Inventor
윤태용
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이헌조
주식회사 금성사
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Publication date
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Priority to KR1019900010414A priority Critical patent/KR920003811A/en
Publication of KR920003811A publication Critical patent/KR920003811A/en

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Abstract

내용 없음No content

Description

박막 EL표시소자 및 그 제조방법Thin film EL display device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 의한 박막 EL표시소자의 구조도1 is a structural diagram of a thin film EL display device according to the present invention

Claims (5)

투명유리판(1)의 상면에 투명전도막(2), 제1절연층(3), 발광층(4), 제2절연층(5), 배면전극(6)이 순차적으로 적층형성되는 박막 EL표시소자에 있어서, 상기 제2절연층(5)과 배면전극(6)의 사이에 광흡수층(7)과 고저항층(8)이 적층형성된 것을 특징으로 하는 박막 EL표시소자.A thin film EL display in which a transparent conductive film 2, a first insulating layer 3, a light emitting layer 4, a second insulating layer 5, and a back electrode 6 are sequentially stacked on an upper surface of the transparent glass plate 1 A thin film EL display element according to claim 1, wherein a light absorption layer (7) and a high resistance layer (8) are laminated between the second insulating layer (5) and the back electrode (6). 제1항에 있어서, 상기 광흡수층(7)/고저항층(8)/배면전극(6)은 각각 AlN/Al2O3/AL로 형성된 것임을 특징으로 하는 박막 EL표시소자.The thin film EL display device according to claim 1, wherein the light absorption layer (7) / high resistance layer (8) / back electrode (6) is formed of AlN / Al 2 O 3 / AL, respectively. 제1항에 있어서, 상기 제2절연층(5)/광흡수층(7)/고저항층(7)은 각각 SiON/SiN/SiO2로 형성된 것임을 특징으로 하는 박막 EL표시소자.2. The thin film EL display device according to claim 1, wherein the second insulating layer (5) / light absorption layer (7) / high resistance layer (7) is formed of SiON / SiN / SiO 2 , respectively. 제1항에 있어서, 상기 제2절연층(5)/광흡수층(7)은 각각 Ta2O5/TaN으로 형성되고, 고저항층(8)/배면전극(6)은 각각 Al2O3/Al로 형성된 것임을 특징으로 하는 박막 EL표시소자.The method of claim 1, wherein the second insulating layer (5) / light absorption layer (7) is formed of Ta 2 O 5 / TaN, respectively, the high resistance layer (8) / back electrode (6) are each Al 2 O 3 A thin film EL display device, characterized in that formed of / Al. 박막 EL표시소자의 제조방법에 잇어서, 투명유리기판(1)의 상면에 투명전도막(2), 제1절연층(3), 발광층(4), 제2절연층(5), 배면전극(6)을 순차적으로 형성하되, 각층의 기본 원소가 같은 경우 동일한 챔버의 내에서 동일한 기본원소 타케트를 사용하여 연속적으로 중착함을 특징으로 하는 박막 EL표시소자의 제조방법.In the method for manufacturing a thin film EL display device, a transparent conductive film 2, a first insulating layer 3, a light emitting layer 4, a second insulating layer 5, and a back electrode are formed on an upper surface of the transparent glass substrate 1. 6) is sequentially formed, but if the basic elements of each layer are the same, the method of manufacturing a thin film EL display device characterized in that it is continuously deposited using the same basic element target in the same chamber. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019900010414A 1990-07-10 1990-07-10 Thin film EL display device and manufacturing method thereof KR920003811A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900010414A KR920003811A (en) 1990-07-10 1990-07-10 Thin film EL display device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900010414A KR920003811A (en) 1990-07-10 1990-07-10 Thin film EL display device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
KR920003811A true KR920003811A (en) 1992-02-29

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KR1019900010414A KR920003811A (en) 1990-07-10 1990-07-10 Thin film EL display device and manufacturing method thereof

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100449856B1 (en) * 2000-12-01 2004-09-22 한국전자통신연구원 Thin film electroluminescent device having current control layer
US6815887B2 (en) 2001-12-26 2004-11-09 Samsung Sdi Co., Ltd. Organic electroluminescent display device
KR100809427B1 (en) * 2006-07-10 2008-03-05 삼성전기주식회사 Photoelectric conversion device and method for manufacturing thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100449856B1 (en) * 2000-12-01 2004-09-22 한국전자통신연구원 Thin film electroluminescent device having current control layer
US6815887B2 (en) 2001-12-26 2004-11-09 Samsung Sdi Co., Ltd. Organic electroluminescent display device
KR100472502B1 (en) * 2001-12-26 2005-03-08 삼성에스디아이 주식회사 Organic electro luminescence display device
KR100809427B1 (en) * 2006-07-10 2008-03-05 삼성전기주식회사 Photoelectric conversion device and method for manufacturing thereof

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