JPS59130395U - Thin film EL panel - Google Patents
Thin film EL panelInfo
- Publication number
- JPS59130395U JPS59130395U JP2388383U JP2388383U JPS59130395U JP S59130395 U JPS59130395 U JP S59130395U JP 2388383 U JP2388383 U JP 2388383U JP 2388383 U JP2388383 U JP 2388383U JP S59130395 U JPS59130395 U JP S59130395U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin film
- insulating
- panel
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は従来の薄膜ELパネルの断面図、第2図は本考
案薄膜ELパネルの一実施例を示す断面図である。
1・・・・・・ガラス基板、2・・・・・・透明電極層
、3・・・・・・第1の絶縁層、4・・・・・・発光層
、5・・・・・・第2の絶縁層、6・・・・・・背面電
極層、9・・・・・・防湿油、10・・・・・・封止板
、11.13.15・・・・・・SiO□膜、12゜1
4・・・・・・Si3N、膜。FIG. 1 is a sectional view of a conventional thin film EL panel, and FIG. 2 is a sectional view of an embodiment of the thin film EL panel of the present invention. DESCRIPTION OF SYMBOLS 1... Glass substrate, 2... Transparent electrode layer, 3... First insulating layer, 4... Light emitting layer, 5... - Second insulating layer, 6... Back electrode layer, 9... Moisture-proof oil, 10... Sealing plate, 11.13.15... SiO□ film, 12゜1
4...Si3N, film.
Claims (1)
ネルであって透明なガラス基板上に複数本の直線状の電
極子にパターニングされた透明電極層を、更にその上に
Si3N4若しくはSiO□およびSi3N4の複合薄
膜を数100Aの膜厚に形成し、更に誘電率の高い絶縁
材料より成る第1の絶縁層と発光層と前記第1の絶縁層
と同じ材料より成る第2の絶縁層を順次形成し、該第2
の絶縁層上にSi3N、若しくはSiO2とSi3N、
の複合薄膜を形成し、該最上層のSiO□の層上に前記
透明電極の電極子と直角に交差するように複数本の直線
状の電極子にパターニングされた背面電極層を形成した
ことを特徴とする薄膜ELパネル。It is a thin-film EL panel with a double insulating film structure in which a light emitting layer is sandwiched between insulating layers, and a transparent electrode layer patterned into a plurality of linear electrode elements is placed on a transparent glass substrate, and on top of that is a layer of Si3N4 or SiO. A composite thin film of □ and Si3N4 is formed to a thickness of several hundred amperes, and a first insulating layer made of an insulating material with a high dielectric constant, a light emitting layer, and a second insulating layer made of the same material as the first insulating layer. are sequentially formed, and the second
Si3N, or SiO2 and Si3N, on the insulating layer of
A composite thin film was formed, and a back electrode layer patterned into a plurality of linear electrode elements so as to intersect the electrode elements of the transparent electrode at right angles was formed on the uppermost layer of SiO□. Characteristic thin film EL panel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2388383U JPS59130395U (en) | 1983-02-22 | 1983-02-22 | Thin film EL panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2388383U JPS59130395U (en) | 1983-02-22 | 1983-02-22 | Thin film EL panel |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59130395U true JPS59130395U (en) | 1984-09-01 |
Family
ID=30154951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2388383U Pending JPS59130395U (en) | 1983-02-22 | 1983-02-22 | Thin film EL panel |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59130395U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6345797A (en) * | 1986-08-13 | 1988-02-26 | 株式会社日立製作所 | Thin film light emitting device |
-
1983
- 1983-02-22 JP JP2388383U patent/JPS59130395U/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6345797A (en) * | 1986-08-13 | 1988-02-26 | 株式会社日立製作所 | Thin film light emitting device |
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