JPH01177899U - - Google Patents

Description

[Brief explanation of the drawing]

FIG. 1 is a sectional side view showing a first embodiment of the structure of a thin film EL element according to this invention, and FIG. 2 is a sectional side view showing a second embodiment. FIGS. 3A and 3B are waveform diagrams showing applied voltage waveforms and accompanying light emission waveforms. 4 and 5 are cross-sectional side views showing a conventional example. Explanation of symbols of main parts, 1: Glass substrate, 2:
Transparent electrode, 3: dielectric film, 4a: first insulator layer (ferroelectric film), 4b: second insulator layer (ferroelectric film), 5: light emitting layer, 6: metal electrode.

Claims (1)

[Claims for Utility Model Registration] 1. A structure in which a light-emitting layer that emits light in response to the application of voltage is sandwiched between a pair of electrodes, at least one of which is a transparent electrode, between insulating layers, or above or below the light-emitting layer. When a ferroelectric film is used as the insulator layer in a thin film EL device with a laminated structure provided with an insulator layer, a dielectric film with a dielectric constant smaller than that of the ferroelectric film is placed directly above the transparent electrode or A structure of a thin film EL element characterized by being provided directly below the other electrode. 2. When the dielectric constant of the ferroelectric film forming the insulating layer is 100 or more, the dielectric constant of the dielectric film provided directly above the transparent electrode or directly below the other electrode is 10 or less, 2. The structure of a thin film EL device according to claim 1, wherein the thickness of the ferroelectric film is 1/10 or less of the thickness of the ferroelectric film.