JPS63135795U - - Google Patents
Info
- Publication number
- JPS63135795U JPS63135795U JP2966987U JP2966987U JPS63135795U JP S63135795 U JPS63135795 U JP S63135795U JP 2966987 U JP2966987 U JP 2966987U JP 2966987 U JP2966987 U JP 2966987U JP S63135795 U JPS63135795 U JP S63135795U
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting layer
- thin
- film
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007769 metal material Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims 2
- 239000000654 additive Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
第１図は本考案の一実施例を示す断面図、第２
図は電圧無印加時のエネルギーバンドを示す説明
図、第３図は同電圧印加時の説明図、第４図は従
来例を示す断面図である。
２……透明電極、３……第１の絶縁層、４……
発光層、５……第２の絶縁層、６……背面電極、
８……金属材料、１２……シヨツトキー障壁。
Fig. 1 is a sectional view showing one embodiment of the present invention;
The figure is an explanatory diagram showing an energy band when no voltage is applied, FIG. 3 is an explanatory diagram when the same voltage is applied, and FIG. 4 is a cross-sectional view showing a conventional example. 2... Transparent electrode, 3... First insulating layer, 4...
light emitting layer, 5... second insulating layer, 6... back electrode,
8... Metal material, 12... Schottky barrier.
Claims (1)
下の絶縁層を積層した積層構造体を一対の電極間
に介設して成る薄膜ＥＬ素子において、前記発光
層はその母体材料内に金属材料を添加して形成し
たことを特徴とする薄膜ＥＬ素子。 In a thin-film EL device, the light-emitting layer includes a layered structure in which one or less insulating layers are laminated on a light-emitting layer that emits light in response to an applied voltage, and is interposed between a pair of electrodes, and the light-emitting layer has a metal material in its base material. A thin film EL device characterized in that it is formed by adding additives.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2966987U JPS63135795U (en) | 1987-02-26 | 1987-02-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2966987U JPS63135795U (en) | 1987-02-26 | 1987-02-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63135795U true JPS63135795U (en) | 1988-09-06 |
Family
ID=30833761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2966987U Pending JPS63135795U (en) | 1987-02-26 | 1987-02-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63135795U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57105995A (en) * | 1980-12-22 | 1982-07-01 | Omron Tateisi Electronics Co | Method of producing field effect light emitting device |
| JPS6129093A (en) * | 1984-07-18 | 1986-02-08 | 関西日本電気株式会社 | White light emitting field light emitting lamp |
-
1987
- 1987-02-26 JP JP2966987U patent/JPS63135795U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57105995A (en) * | 1980-12-22 | 1982-07-01 | Omron Tateisi Electronics Co | Method of producing field effect light emitting device |
| JPS6129093A (en) * | 1984-07-18 | 1986-02-08 | 関西日本電気株式会社 | White light emitting field light emitting lamp |