JPS63135795U - - Google Patents

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Publication number
JPS63135795U
JPS63135795U JP2966987U JP2966987U JPS63135795U JP S63135795 U JPS63135795 U JP S63135795U JP 2966987 U JP2966987 U JP 2966987U JP 2966987 U JP2966987 U JP 2966987U JP S63135795 U JPS63135795 U JP S63135795U
Authority
JP
Japan
Prior art keywords
light
emitting layer
thin
film
laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2966987U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2966987U priority Critical patent/JPS63135795U/ja
Publication of JPS63135795U publication Critical patent/JPS63135795U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す断面図、第2
図は電圧無印加時のエネルギーバンドを示す説明
図、第3図は同電圧印加時の説明図、第4図は従
来例を示す断面図である。 2……透明電極、3……第1の絶縁層、4……
発光層、5……第2の絶縁層、6……背面電極、
8……金属材料、12……シヨツトキー障壁。
Fig. 1 is a sectional view showing one embodiment of the present invention;
The figure is an explanatory diagram showing an energy band when no voltage is applied, FIG. 3 is an explanatory diagram when the same voltage is applied, and FIG. 4 is a cross-sectional view showing a conventional example. 2... Transparent electrode, 3... First insulating layer, 4...
light emitting layer, 5... second insulating layer, 6... back electrode,
8... Metal material, 12... Schottky barrier.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 電圧印加に応じて発光を呈する発光層に一層以
下の絶縁層を積層した積層構造体を一対の電極間
に介設して成る薄膜EL素子において、前記発光
層はその母体材料内に金属材料を添加して形成し
たことを特徴とする薄膜EL素子。
In a thin-film EL device, the light-emitting layer includes a layered structure in which one or less insulating layers are laminated on a light-emitting layer that emits light in response to an applied voltage, and is interposed between a pair of electrodes, and the light-emitting layer has a metal material in its base material. A thin film EL device characterized in that it is formed by adding additives.
JP2966987U 1987-02-26 1987-02-26 Pending JPS63135795U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2966987U JPS63135795U (en) 1987-02-26 1987-02-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2966987U JPS63135795U (en) 1987-02-26 1987-02-26

Publications (1)

Publication Number Publication Date
JPS63135795U true JPS63135795U (en) 1988-09-06

Family

ID=30833761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2966987U Pending JPS63135795U (en) 1987-02-26 1987-02-26

Country Status (1)

Country Link
JP (1) JPS63135795U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57105995A (en) * 1980-12-22 1982-07-01 Omron Tateisi Electronics Co Method of producing field effect light emitting device
JPS6129093A (en) * 1984-07-18 1986-02-08 関西日本電気株式会社 White light emitting field light emitting lamp

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57105995A (en) * 1980-12-22 1982-07-01 Omron Tateisi Electronics Co Method of producing field effect light emitting device
JPS6129093A (en) * 1984-07-18 1986-02-08 関西日本電気株式会社 White light emitting field light emitting lamp

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