JPS6248700U - - Google Patents
Info
- Publication number
- JPS6248700U JPS6248700U JP14030185U JP14030185U JPS6248700U JP S6248700 U JPS6248700 U JP S6248700U JP 14030185 U JP14030185 U JP 14030185U JP 14030185 U JP14030185 U JP 14030185U JP S6248700 U JPS6248700 U JP S6248700U
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- display device
- sio
- emitting layer
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
Description
第１図および第２図は本考案の一実施例を示す
断面図、第３図は同実施例の背面電極の反射率を
示すグラフ、第４図は従来の薄膜ＥＬ表示装置で
ある。
１２……透明電極、１４……発光層、１６ａ…
…ＳｉＯ層、１６ｂ……Ｇｅ層、１７……背面電
極。
1 and 2 are cross-sectional views showing one embodiment of the present invention, FIG. 3 is a graph showing the reflectance of the back electrode of the same embodiment, and FIG. 4 is a conventional thin film EL display device. 12...Transparent electrode, 14...Light emitting layer, 16a...
...SiO layer, 16b...Ge layer, 17...back electrode.
Claims (1)
れこの両極間に電圧を印加することによりＥＬ発
光する透明螢光体よりなる発光層とを有する薄膜
ＥＬ表示装置において、前記背面電極の発光層側
表面にＳｉＯとＧｅを積層形成したことを特徴と
する薄膜ＥＬ表示装置。 (2) ＳｉＯとＧｅは、発光層側からＳｉＯ、Ｇ
ｅの順に積層形成されている実用新案登録請求の
範囲第１項記載の薄膜ＥＬ表示装置。 (3) ＳｉＯは、膜厚を５０〜１００ｎｍとし、
Ｇｅは、膜厚を２５〜５０ｎｍとした実用新案登
録請求の範囲第１項もしくは第２項記載の薄膜Ｅ
Ｌ表示装置。[Claims for Utility Model Registration] (1) A thin film EL having a transparent electrode, a back electrode, and a light-emitting layer made of a transparent phosphor that is interposed between these electrodes and emits EL when a voltage is applied between these two electrodes. A thin film EL display device, characterized in that SiO and Ge are laminated on the surface of the back electrode on the light emitting layer side. (2) SiO and Ge are separated from the light emitting layer side.
The thin film EL display device according to claim 1, wherein the thin film EL display device is laminated in the order of e. (3) SiO has a film thickness of 50 to 100 nm,
Ge is a thin film E according to claim 1 or 2 of the utility model registration claim having a film thickness of 25 to 50 nm.
L display device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14030185U JPS6248700U (en) | 1985-09-13 | 1985-09-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14030185U JPS6248700U (en) | 1985-09-13 | 1985-09-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6248700U true JPS6248700U (en) | 1987-03-25 |
Family
ID=31047022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14030185U Pending JPS6248700U (en) | 1985-09-13 | 1985-09-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6248700U (en) |
-
1985
- 1985-09-13 JP JP14030185U patent/JPS6248700U/ja active Pending