JPH02148593U - - Google Patents
Info
- Publication number
- JPH02148593U JPH02148593U JP5703189U JP5703189U JPH02148593U JP H02148593 U JPH02148593 U JP H02148593U JP 5703189 U JP5703189 U JP 5703189U JP 5703189 U JP5703189 U JP 5703189U JP H02148593 U JPH02148593 U JP H02148593U
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- light
- electrode
- emitting layer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Description
第１図乃至第２図はこの考案に係る薄膜ＥＬ素
子の構造の実施例を示し、第１図は断面図、第２
図は非発光状態の透明電極と背面電極間に印加さ
れる電圧の波形図である。第３図乃至第６図は従
来の実施例を示し、第３図は従来の断面図、第４
図は発光状態の電源及び第１の電極と第２の電極
間に印加される電圧の波形図、第５図及び第６図
は非発光状態の電源及び第１の電極と第２の電極
間に印加される電圧の波形図である。
主な符号の説明、１……ガラス基板、２……透
明電極、３……第１の誘電体層、４……発光層、
５……第２の誘電体層、６，７……背面電極、８
……低圧駆動回路、Ｖａ，Ｖｂ……電源。
1 and 2 show an example of the structure of a thin film EL element according to this invention, and FIG. 1 is a cross-sectional view, and FIG.
The figure is a waveform diagram of the voltage applied between the transparent electrode and the back electrode in a non-emission state. 3 to 6 show conventional embodiments, FIG. 3 is a sectional view of the conventional example, and FIG.
The figure shows the power supply in the light-emitting state and the waveform diagram of the voltage applied between the first electrode and the second electrode. Figures 5 and 6 show the power supply in the non-light-emitting state and the waveform diagram of the voltage applied between the first electrode and the second electrode. FIG. Explanation of main symbols, 1...Glass substrate, 2...Transparent electrode, 3...First dielectric layer, 4...Light emitting layer,
5... Second dielectric layer, 6, 7... Back electrode, 8
...Low voltage drive circuit, V a , V b ... Power supply.
Claims (1)
つ、透明電極と発光層との間には第１の誘電体層
が形成され、発光層と背面電極との間には第２の
誘電体層が形成された薄膜ＥＬ素子において、 前記背面電極を二分割すると共に分割された一
方の背面電極と透明電極との間には発光層を形成
しないように構成したことを特徴とする薄膜ＥＬ
素子の構造。 ２ 第１の誘電体層と第２の誘電体層の少なくと
も一方の誘電体層は強誘電体で構成したことを特
徴とする請求項１記載の薄膜ＥＬ素子の構造。[Claims for Utility Model Registration] 1. Consisting of a transparent electrode, a back electrode, and a light-emitting layer, a first dielectric layer is formed between the transparent electrode and the light-emitting layer, and a first dielectric layer is formed between the light-emitting layer and the back electrode. In the thin film EL element in which a second dielectric layer is formed between, the back electrode is divided into two parts, and a light emitting layer is not formed between one of the divided back electrodes and the transparent electrode. Thin film EL characterized by
Structure of element. 2. The structure of a thin film EL device according to claim 1, wherein at least one of the first dielectric layer and the second dielectric layer is made of a ferroelectric material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5703189U JPH02148593U (en) | 1989-05-19 | 1989-05-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5703189U JPH02148593U (en) | 1989-05-19 | 1989-05-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02148593U true JPH02148593U (en) | 1990-12-18 |
Family
ID=31581378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5703189U Pending JPH02148593U (en) | 1989-05-19 | 1989-05-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02148593U (en) |
-
1989
- 1989-05-19 JP JP5703189U patent/JPH02148593U/ja active Pending