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박막 EL소자의 제조방법Manufacturing method of thin film EL device
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 박막 EL소자의 구조도, 제3도는 본 발명의 공정순서도.2 is a structural diagram of a thin film EL device of the present invention, and FIG. 3 is a process flowchart of the present invention.
Claims (2)
투명기판(11)위에 순차적으로 투명전극(12), 제1절연층913), 발광층(14), 제2절연층(15), 배면전극(16)을 적충한 것에 있어서, 배면전극(16)을 양극산화법을 이용하여 패턴을 형성함과 동시에 패턴사이에 산화절연막(17)을 형성함을 특징으로 하는 박막 EL소자의 제조방법.On the transparent substrate 11, the transparent electrode 12, the first insulating layer 913, the light emitting layer 14, the second insulating layer 15, and the back electrode 16 are sequentially stacked. A method of manufacturing a thin film EL device characterized in that a pattern is formed by anodization and an oxide insulating film (17) is formed between the patterns.제1항에 있어서, 산화절연막(17)은 양극산화법에 의해 Al2O3로 됨을 특징으로 하는 박막 EL소자의 제조방법.The method of manufacturing a thin film EL device according to claim 1, wherein the oxide insulating film (17) is made Al 2 O 3 by anodization.※ 참고사항 : 최초출원내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900022602A1990-12-311990-12-31
Manufacturing method of thin film EL device
KR920014365A
(en)