KR950005108A

KR950005108A - Manufacturing method of electroluminescent device

Info

Publication number: KR950005108A
Application number: KR1019930013216A
Authority: KR
Inventors: 정경득
Original assignee: 이헌조; 주식회사 금성사
Priority date: 1993-07-14
Filing date: 1993-07-14
Publication date: 1995-02-18

Abstract

본 발명은 다색 EL소자의 제조에 관한 것으로 투명기판(11)위에 투명전극 (12), 제1절연층(13), 유전체막(14)을 차례로 형성하는 공정과, 상기 유전체막(14)상에 제1포토레지스트 패턴(15)을 형성하는 공정, 상기 포토레지스트 패턴(15)을 마스크로 하여 상기 유전체막(14)을 식각하는 공정, 결과물상에 제1발광층(16), 산화막(17), 금속층(18)을 연속적으로 형성하는 공정, 상기 제1포토레지스트 패턴 (15)을 제거하는 공정, 결과물상에 제2포토레지스트 패턴(19)을 형성하는 공정, 상기 제2포토레지스트 패턴(19)을 마스크로 상기 유전체막을 제거하는 공정, 결과물상에 제2발광층(20)과 산화막(21)을 차례로 형성하는 공정, 상기 제2포토레지스트 패턴을 제거하는 공정, 상기 금속층을 제거하는 공정, 결과물상에 제2절연층(22)을 형성하는 공정 및, 상기 제2절연층(22)상에 배면전극(23)을 형성하는 공정으로 이루어진 것을 특징으로 하는 전계발광소자의 제조방법에 의해 다색 EL소자를 제작함으로써 소자의 안정성 향상을 도모한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of a multicolor EL device, in which a transparent electrode 12, a first insulating layer 13, and a dielectric film 14 are sequentially formed on a transparent substrate 11. Forming a first photoresist pattern 15 on the substrate; etching the dielectric film 14 using the photoresist pattern 15 as a mask; and a first light emitting layer 16 and an oxide film 17 on the resultant. , Continuously forming the metal layer 18, removing the first photoresist pattern 15, forming a second photoresist pattern 19 on the resultant, and the second photoresist pattern 19. ) Removing the dielectric film with a mask, forming a second light emitting layer 20 and an oxide film 21 on the resultant, removing the second photoresist pattern, removing the metal layer, and the resultant. Forming a second insulating layer 22 on the second insulating layer 22; By making the multi-color EL device by the manufacturing method of the electroluminescent device it is characterized by being a step of forming the electrodes 23 and improve stability of the device.

Description

Manufacturing method of electroluminescent device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 종래의 EL소자 구조도, 제3도는 본 발명의 EL소자의 제조공정도, 제4도는 본 발명의 EL소자 구조도.2 is a structure diagram of a conventional EL element, FIG. 3 is a manufacturing process diagram of the EL element of the present invention, and FIG. 4 is an EL element structure diagram of the present invention.

Claims

Forming a transparent electrode 12, a first insulating layer 13, and a dielectric film 14 sequentially on the transparent substrate 11, and forming a first photoresist pattern 15 on the dielectric film 14. A step of starting the dielectric film 14 using the photoresist pattern 15 as a mask, and a step of continuously forming the first light emitting layer 16, the oxide film 17, and the metal layer 18 on the resultant. Removing the first photoresist pattern 15, forming a second photoresist pattern 19 on the resultant, removing the dielectric film using the second photoresist pattern 19 as a mask, Forming a second light emitting layer 20 and an oxide film 21 on the resultant in turn, removing the second photoresist pattern, removing the metal layer, and forming a second insulating layer 22 on the resultant. And forming a back electrode 23 on the second insulating layer 22. Method of manufacturing an electroluminescent device characterized in that.

The method of manufacturing an electroluminescent device according to claim 1, wherein the dielectric film (14) is formed of a nitride film.

※ Note: The disclosure is based on the initial application.