KR960009800A - Thick Film Electroluminescent Device and Manufacturing Method Thereof - Google Patents

Thick Film Electroluminescent Device and Manufacturing Method Thereof Download PDF

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Publication number
KR960009800A
KR960009800A KR1019940021211A KR19940021211A KR960009800A KR 960009800 A KR960009800 A KR 960009800A KR 1019940021211 A KR1019940021211 A KR 1019940021211A KR 19940021211 A KR19940021211 A KR 19940021211A KR 960009800 A KR960009800 A KR 960009800A
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KR
South Korea
Prior art keywords
thick film
manufacturing
electroluminescent device
film electroluminescent
electrode
Prior art date
Application number
KR1019940021211A
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Korean (ko)
Inventor
정재상
Original Assignee
이헌조
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이헌조, 엘지전자 주식회사 filed Critical 이헌조
Priority to KR1019940021211A priority Critical patent/KR960009800A/en
Publication of KR960009800A publication Critical patent/KR960009800A/en

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Abstract

본 발명은 후막 전계발광소자 및 그의 제조방법에 관한 것으로, 종래의 박막 및 후막 전계발황광(EL)소자는 모두가 많은 구동회로를 사용하여 소자를 스위칭시키므로 발광소자 모듈상에서 구동회로가 차지하는 가격비중이 매우 높아 제품 생산시 가격 경쟁력이 높아지는 문제점이 있고, 또한 패널의 불필요한 소비전력이 증대되는 문제점 이 있었다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film electroluminescent device and a method of manufacturing the same. In the conventional thin film and thick film electroluminescent (EL) devices, the driving circuit occupies a light emitting device module because all of them switch the device using many driving circuits. It is very high, there is a problem that the price competitiveness increases in the production of the product, there is also a problem that the unnecessary power consumption of the panel is increased.

본 발명은 이러한 문제점을 해결하기 위하여 기판위에 금속-절연막 -금속(Metal-Insulator-Metal:MIM)와 전계발광(EL)소자를 차례로 형성하여 MIM소자가 전계발광소자에 걸리는 불필요한 전암(stray voltage)을 차단하여 소자의 소비전력을 줄이도록 하는 후막 전계발광소자 및 그의 제조방법을 제공함을 목적으로 하는 것이다.In order to solve this problem, the present invention forms a metal-insulator-metal (MIM) and an electroluminescent (EL) device on a substrate in order to eliminate unnecessary stray voltage on the MIM device. It is an object of the present invention to provide a thick-film electroluminescent device and a method of manufacturing the same to block the power consumption of the device.

Description

후막 전계발광소자 및 그의 제조방법Thick Film Electroluminescent Device and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 본 발명 후막 전계발광소자의 단면도,4 is a cross-sectional view of the thick film electroluminescent device of the present invention;

제5도는 본 발명에 따른 후막 전계발광소자의 등가회로도.5 is an equivalent circuit diagram of a thick film electroluminescent device according to the present invention.

Claims (4)

기판상에 MIM 소자를 형성하고, 상기 MIM 소자위에 전계발광(EL)소자를 구비한 것을 특징으로 하는 후막 전계발광소자.A thick film electroluminescent device, comprising: forming a MIM element on a substrate, and including an electroluminescent (EL) element on the MIM element. 제1항에 있어서, 상기 MIM소자는 Ta전극, Ta2O5막. 후막전극이 차례로 적층되어 구성되는 것을 특징으로 하는 후막 전계발광소자.The TaIM, Ta 2 O 5 film according to claim 1, wherein the MIM element is a Ta electrode. A thick film electroluminescent device, characterized in that the thick film electrodes are sequentially stacked. 제1항에 있어서, 전계발광(EL)소자는 상기 후막전극위에 후막절연층, 발광층, 투명전극이 차례로 적층되어 구성되는 것을 특징으로 하는 후막 전계발광소자.The thick film electroluminescent device according to claim 1, wherein the electroluminescent (EL) device is formed by sequentially stacking a thick film insulating layer, a light emitting layer, and a transparent electrode on the thick film electrode. 기판위에 Ta전극을 형성하는 공정과, 상기 전극표면을 산화시켜 Ta2O5절연층을 형성하는 공정과, 상기 절연층위에 후막전극을 형성하는 공정과, 상기 후막전극위에 후막절연층을 형성하는 공정과, 상기 후막절연층 위에 발광층을 형성하는 공정과, 상기 발광층위에 투명전극을 형성하는 공정으로 이루어지는 것을 특징으로 하는 후막 전계발광소자의 제조방법.Forming a Ta electrode on a substrate, oxidizing the electrode surface to form a Ta 2 O 5 insulating layer, forming a thick film electrode on the insulating layer, and forming a thick film insulating layer on the thick film electrode. And a step of forming a light emitting layer on the thick film insulating layer, and a step of forming a transparent electrode on the light emitting layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940021211A 1994-08-26 1994-08-26 Thick Film Electroluminescent Device and Manufacturing Method Thereof KR960009800A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940021211A KR960009800A (en) 1994-08-26 1994-08-26 Thick Film Electroluminescent Device and Manufacturing Method Thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940021211A KR960009800A (en) 1994-08-26 1994-08-26 Thick Film Electroluminescent Device and Manufacturing Method Thereof

Publications (1)

Publication Number Publication Date
KR960009800A true KR960009800A (en) 1996-03-22

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KR1019940021211A KR960009800A (en) 1994-08-26 1994-08-26 Thick Film Electroluminescent Device and Manufacturing Method Thereof

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100603334B1 (en) * 2004-04-06 2006-07-20 삼성에스디아이 주식회사 A active matrix organic electro luminescence pixel
KR100683679B1 (en) * 2004-07-07 2007-02-15 삼성에스디아이 주식회사 Organic light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100603334B1 (en) * 2004-04-06 2006-07-20 삼성에스디아이 주식회사 A active matrix organic electro luminescence pixel
KR100683679B1 (en) * 2004-07-07 2007-02-15 삼성에스디아이 주식회사 Organic light emitting device

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