KR910007119A - 리드프레임 및 그 제조방법 - Google Patents
리드프레임 및 그 제조방법 Download PDFInfo
- Publication number
- KR910007119A KR910007119A KR1019900015528A KR900015528A KR910007119A KR 910007119 A KR910007119 A KR 910007119A KR 1019900015528 A KR1019900015528 A KR 1019900015528A KR 900015528 A KR900015528 A KR 900015528A KR 910007119 A KR910007119 A KR 910007119A
- Authority
- KR
- South Korea
- Prior art keywords
- lead frame
- adhesive
- metal
- resin
- joining
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49506—Lead-frames or other flat leads characterised by the die pad an insulative substrate being used as a diepad, e.g. ceramic, plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48644—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 리드 프레임의 1실시예를 나타낸 평면도.
제2도는 제1도에서 Ⅱ-Ⅱ선을 따라 자른 단면도.
제3도는 본 발명의 1실시예에 있어서 리드 프레임의 제조를 설명하는 도면.
Claims (14)
- 복수의 리드가 형성되어 있는 리드 프레임 단체에 금속 또는 수지로 된 단층 또는 다층이 기반을 접합함으로써 형성되어 있는 리드 프레임에 있어서, 상기 리드 프레임 단체와 상기 기반은 그들 사이의 복수 소정부분으로 분할해서 개설된 접착제 필름 또는 접착제를 갖고 있는 수지 필름으로 접합되어 있는 것을 특징으로 하는 리드 프레임.
- 복수의 리드가 형성되고 있는 리드 프레임 단체에 금속 또는 수지로 된 단층 또는 다층의 기반을 접합함으로써 형성되어 있는 리드 프레임의 제조방법에 있어서, 접착제 필름 또는 양면에 접착제를 갖고 있는 수지필름을 상기 리드 프렘임 단체의 복수 소정부분으로 분할해서 접착하고, 그 후 상기 기반을 상기 접착제 필름 또는 상기 수지 필름의 상기 접착제로 접합하는 것을 특징으로 하는 리드 프레임의 제조 방법.
- 복수의 리드가 형성되어 있는 리드 프레임 단체에 금속 또는 수지로 된 단층 또는 다층의 기반을 접합함으로서 형성되어 있는 리드 프레임의 제조방법에 있어서, 접착제 필름 또는 양면에 접착제를 갖고 있는 수지 필름을 상기 기반의 복수 소정부분으로 분할해서 접착하고, 그 후 상기 리드 프레임 단체를 상기 접착제 필름 또는 상기 수지 필름의 상기 접착제로 접합하는 것을 특징으로 하는 리드 프레임의 제조 방법.
- 복수의 리드가 형성되어 있는 리드 프레임 단체에 금속 또는 수지로 된 단층 또는 다층의 기반을 접합함으로서 형성되어 있는 리드 프레임의 제조방법에 있어서, 상기 리드 프레임 단체와 상기 기반을 그들 사이의 복수 소정부분으로 분할해서 개설된 접착제 필름 또는 양면에 접착제를 갖고 있는 수지필름으로 접합하고, 상기 접착제필름 또는 상기 양면에 접착제를 갖고 있는 수지 필름을 상기 리드 프레임 단체와 상기 기반에 동시에 접착하는 것을 특징으로 하는 리드 프레임의 제조 방법.
- 복수의 리드가 형성되어 있는 리드 프레임 단체에 금속 또는 수지로 된 단층 또는 다층의 기반단체를 접합함으로서 형성되어 있는 리드 프레임에 있어서, 상기 리드 프레임 단체 및 상기 기반 단체를 함께 동일 복수개의 연속상으로 형성되어 있음과 동시에 이들 리드 프레임 단체 및 기반 단체가 연속상으로 서로 접합되어 있는 것을 특징으로 하는 리드 프레임.
- 복수의 리드가 형성되어 있는 리드 프레임 단체에 금속 또는 수지로 된 단층 또는 다층의 기반단체를 접합함으로서 형성되어 있는 리드 프레임의 제조방법에 있어서, 상기 리드 프레임 단체 및 상기 기반 단체를 함께 동일 복수개의 연속상으로 형성함과 동시에 이들 리드 프레임 단체 및 기반 단체를 접착제 필름, 양면 접착제를 갖고 있는 수지 필름, 용접 및 코킹중 어느 하나에 의해 연속상으로 서로 접합하는 것을 특징으로 하는 리드 프레임의 제조 방법.
- 제 6 항에 있어서, 상기 리드 프레임 단체와 상기 기반과의 위치 맞춤을 연속상의 리드 프레임 단체 및 연속상의 기반 단체의 공통부분에 형성한 치구구멍으로 행하는 것을 특징으로 하는 리드 프레임의 제조 방법.
- 제 6 항 또는 제 7 항에 있어서, 탑재된 칩의 부착 공정전, 또는 그 칩의 부착 공정중 혹은 수지 모울드 후에 상기 연속상의 리드 프레임 단체와 상기 연속상의 기반 단체를 상기 리드의 사이에서 각각으로 절단하는 것을 특징으로 하는 리드 프레임의 제조 방법.
- 복수의 리드가 형성되어 있는 리드 프레임 단체에 복수의 금속기반을 접합함으로써 형성되어 있는 리드 프레임에 있어서, 상기 복수의 금속기반은 상이한 재질로 형성되어 있는 것을 특징으로 하는 리드 프레임.
- 복수의 리드가 형성되어 있는 리드 프레임 단체에 복수의 금속기반을 접합함으로써 형성되어 있는 리드 프레임에 있어서, 상기 복수의 금속기반은 상이한 판두께로 설정되어 있는 것을 특징으로 하는 리드 프레임.
- 복수의 리드가 형성되어 있는 리드 프레임 단체에 복수의 금속기반을 접합함으로써 형성되어 있는 리드 프레임에 있어서, 상기 복수의 금속기반은 상이한 표면처리가 시행되어 있는 것을 특징으로 하는 리드 프레임.
- 제 9 항에 있어서, 상기 복수의 금속기반은 상이한 판두께로 설정되어 있는 것을 특징으로하는 리드 프레임.
- 제9항, 제10항 및 제12항중 어느 한 항에 있어서, 상기 복수의 금속기반은 상이한 표면처리가 시행되어 있는 것을 특징으로 하는 리드 프레임.
- 제1항 내지 제13항중 어느 한 항에 있어서, 상기 복수의 금속기반 끼리 및 상기 리드 프레임 단체와 상기 금속 기반과는 절연성의 접착제 필름 또는 양면에 접착제를 갖고 있는 수지 필름으로 접합되어 있는 것을 특징으로 하는 리드 프레임.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1253245A JP2790675B2 (ja) | 1989-09-28 | 1989-09-28 | リードフレーム |
JP1-253245 | 1989-09-28 | ||
JP1253244A JP2911920B2 (ja) | 1989-09-28 | 1989-09-28 | リードフレーム及びその製造方法 |
JP1-253244 | 1989-09-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910007119A true KR910007119A (ko) | 1991-04-30 |
KR100192871B1 KR100192871B1 (ko) | 1999-06-15 |
Family
ID=27478288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900015528A KR100192871B1 (ko) | 1989-09-28 | 1990-09-28 | 리드프레임 및 그 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US5448105A (ko) |
KR (1) | KR100192871B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100753749B1 (ko) * | 1992-03-27 | 2007-08-31 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체 집적 회로 장치 및 그 제조 방법 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1996037915A1 (en) * | 1995-05-26 | 1996-11-28 | Sheldahl, Inc. | Adherent film with low thermal impedance and high electrical impedance used in an electronic assembly with a heat sink |
DE19543920C2 (de) * | 1995-11-24 | 2000-11-16 | Eupec Gmbh & Co Kg | Leistungshalbleiter-Modul |
JP3612155B2 (ja) * | 1996-11-20 | 2005-01-19 | 株式会社日立製作所 | 半導体装置および半導体装置用のリードフレーム |
US6195258B1 (en) * | 1999-08-26 | 2001-02-27 | Advanced Semiconductor Engineering, Inc. | Thermal board used for bonding wires in semiconductor manufacturing process |
JP4737942B2 (ja) * | 2004-03-24 | 2011-08-03 | Tdk株式会社 | 太陽電池の製造方法 |
KR20200133072A (ko) * | 2019-05-16 | 2020-11-26 | 삼성전자주식회사 | 이미지 센서 패키지 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3626259A (en) * | 1970-07-15 | 1971-12-07 | Trw Inc | High-frequency semiconductor package |
US4677526A (en) * | 1984-03-01 | 1987-06-30 | Augat Inc. | Plastic pin grid array chip carrier |
US4858073A (en) * | 1986-12-10 | 1989-08-15 | Akzo America Inc. | Metal substrated printed circuit |
US5012322A (en) * | 1987-05-18 | 1991-04-30 | Allegro Microsystems, Inc. | Semiconductor die and mounting assembly |
US4942454A (en) * | 1987-08-05 | 1990-07-17 | Mitsubishi Denki Kabushiki Kaisha | Resin sealed semiconductor device |
US5155299A (en) * | 1988-10-05 | 1992-10-13 | Olin Corporation | Aluminum alloy semiconductor packages |
US4931854A (en) * | 1989-02-06 | 1990-06-05 | Kyocera America, Inc. | Low capacitance integrated circuit package |
-
1990
- 1990-09-28 KR KR1019900015528A patent/KR100192871B1/ko not_active IP Right Cessation
-
1995
- 1995-01-17 US US08/372,901 patent/US5448105A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100753749B1 (ko) * | 1992-03-27 | 2007-08-31 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체 집적 회로 장치 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100192871B1 (ko) | 1999-06-15 |
US5448105A (en) | 1995-09-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5100492A (en) | Process for manufacturing printed-circuit boards having rigid and flexible areas | |
JPS63147693A (ja) | Icカ−ドの製造方法 | |
JP2010508169A (ja) | 少なくとも1つの電子モジュールを備えるカードを製造する方法、本方法中に製作されるアセンブリ、及び中間生成物 | |
KR910007119A (ko) | 리드프레임 및 그 제조방법 | |
KR890018026A (ko) | Ic유니트 및 그 접합방법 | |
KR910011105A (ko) | 전자부품 탑재용 기판 및 그 제조 방법 | |
KR960039241A (ko) | 반도체 디바이스 제조방법 | |
JPH0817855A (ja) | 半導体装置の製造方法およびこれに用いられる積層体 | |
JPS6320894A (ja) | 電気回路を有するサンドイツチ板の製造方法 | |
KR890016890A (ko) | 저융점 글라스를 사용하여 구성부품들을 접합하는 방법 | |
JPH03159189A (ja) | フレキシブルプリント基板 | |
JPH0625621A (ja) | 接着シート及びそれを用いて製造した電子部品 | |
JPH056714Y2 (ko) | ||
JPH04119643A (ja) | テープキャリアパッケージの位置決め穴の形成方法 | |
JPS58148987A (ja) | 腕時計の基体部材 | |
JPH0469822B2 (ko) | ||
JPH0262095A (ja) | 多層プリント配線板の製造方法 | |
EP0881677A4 (en) | SEMICONDUCTOR ARRANGEMENT AND MULTILAYERED LADDER FRAME THEREFOR | |
JPS5831429Y2 (ja) | 時計用基板 | |
KR970023900A (ko) | 반도체 장치를 구비한 반도체 다이 구조체 및 리드 프레임내 결합 방법 | |
JPS62137833A (ja) | 電子機器の製造方法 | |
JPH01181553A (ja) | サイドブレーズ型セラミック基板 | |
JPS59122225U (ja) | アルミニウム箔製蓋材 | |
JPS60114719U (ja) | 複層耐熱サンドイツチパネル | |
JP2000182018A (ja) | 耐熱性icカードの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20091116 Year of fee payment: 12 |
|
EXPY | Expiration of term |