KR910005370A - 전자 비임 리도그래피 기계에의한 서입(writing)을 개선시키는 전자 검출기 다이오드 바이어싱 스킴(biassing scheme) - Google Patents

전자 비임 리도그래피 기계에의한 서입(writing)을 개선시키는 전자 검출기 다이오드 바이어싱 스킴(biassing scheme) Download PDF

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Publication number
KR910005370A
KR910005370A KR1019900012000A KR900012000A KR910005370A KR 910005370 A KR910005370 A KR 910005370A KR 1019900012000 A KR1019900012000 A KR 1019900012000A KR 900012000 A KR900012000 A KR 900012000A KR 910005370 A KR910005370 A KR 910005370A
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South Korea
Prior art keywords
electron
machine
substrate
electron beam
secondary electrons
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KR1019900012000A
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English (en)
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KR0137937B1 (ko
Inventor
제이. 데보어 윌리엄
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원본미기재
에텍, 아이엔씨
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Application filed by 원본미기재, 에텍, 아이엔씨 filed Critical 원본미기재
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2441—Semiconductor detectors, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2449—Detector devices with moving charges in electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24578—Spatial variables, e.g. position, distance

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)

Abstract

내용 없음

Description

전자 비임 리도그래피 기계에 의한 서입(writing)을 개선시키는 전자 검출기 다이오드 바이어싱 스킴(biassing scheme)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 전자 검출기의 개략적 예시도로서, 침적되는 경우 패턴 왜곡을 야기시키는 2차 전자가 기판상에 침적되지않음을 보여주는 도면.
제5도는 선행 기술 전자 검출기에 의해 야기된 패턴 왜곡과 본 발명의 결과인 서입 개선을 보여주는 시험 패턴들의 비교도.

Claims (5)

  1. 비임 컬럼을 구비하고 제어된 전자 비임으로 비임 컬럼 아래에 배치된 기판상에 패턴을 서입할 수 있는 전자비임 리도그래피 기계에 있어서, 비임 위치 검지 장치가 상기 전자 비임에의한 상기 기판상의 전자 충돌에 의해 발생된 후방 산란 전자에 응답하여 비임 위치를 검지하는 전자 검출기 수단 및 상기 충돌에 응답하여 상기 검출기로부터 방출된 2차 전자를 감소 및 배제시켜 상기 비임을 편향시키고 패턴 왜곡을 야기시키는 상기 기판상의 전하형성을 감소 또는 배제시키는 수단을 포함하는것을 개량으로하는 전자 비임 리도그래피 기계.
  2. 제1항에 있어서, 상기 2차 전자들을 감소 또는 배제시키는 수단이 상기 전자 검출기 수단상에서 상기 2차 전자들을 흡인하는 바이어싱 수단을 포함하는 기계.
  3. 제2항에 있어서, 상기 바이어싱 수단이 상기 검출기 수단상에 상기 기판에 대하여 양(+)인 전압을 인가하는 것을 포함하는 기계.
  4. 제1항에 있어서, 상기 전자 검출기 수단이 다이오드 수단을 포함하며, 상기 2차 전자를 감소 또는 배제시키는 수단이 상기 다이오드 수단상에서 상기 2차 전자들을 흡인하는 수단을 포함하는 기계.
  5. 제4항에 있어서, 상기 바이어싱 수단이 상기 다이오드 수단상에 상기 기판에대해 양(+)인 전압을 인가하는 것을 포함하는 기계.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900012000A 1989-08-08 1990-08-06 전자 비임 리도그래피 기계에 의한 서입을 개선시키는 전자 검출기다이오드 바이어싱 스킴 KR0137937B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/391,202 US4987311A (en) 1989-08-08 1989-08-08 Electron-detector diode biassing scheme for improved writing by an electron beam lithography machine
US07391202 1989-08-08
US07391.202 1989-08-08

Publications (2)

Publication Number Publication Date
KR910005370A true KR910005370A (ko) 1991-03-30
KR0137937B1 KR0137937B1 (ko) 1998-04-27

Family

ID=23545687

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900012000A KR0137937B1 (ko) 1989-08-08 1990-08-06 전자 비임 리도그래피 기계에 의한 서입을 개선시키는 전자 검출기다이오드 바이어싱 스킴

Country Status (6)

Country Link
US (1) US4987311A (ko)
EP (1) EP0412393B1 (ko)
JP (1) JP2900181B2 (ko)
KR (1) KR0137937B1 (ko)
CA (1) CA2022251C (ko)
DE (1) DE69016301T2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3938660A1 (de) * 1989-11-21 1991-05-23 Integrated Circuit Testing Korpuskularstrahlgeraet
JPH0775156B2 (ja) * 1992-03-06 1995-08-09 ▲巌▼ 大泊 イオン照射装置及び方法
US5789748A (en) * 1997-05-29 1998-08-04 Stanford University Low voltage electron beam system
CA2336557A1 (en) * 1999-05-03 2000-11-09 Kim Y. Lee Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6014737A (ja) * 1983-07-06 1985-01-25 Jeol Ltd 反射電子検出装置
JPH0619971B2 (ja) * 1984-11-27 1994-03-16 株式会社島津製作所 走査電子顕微鏡
US4680468A (en) * 1985-08-05 1987-07-14 Canadian Patents And Development Limited-Societe Canadienne Des Brevets Et D'exploitation Limitee Particle detector

Also Published As

Publication number Publication date
KR0137937B1 (ko) 1998-04-27
JPH0472613A (ja) 1992-03-06
EP0412393B1 (en) 1995-01-25
EP0412393A2 (en) 1991-02-13
EP0412393A3 (en) 1991-05-08
CA2022251A1 (en) 1991-02-09
CA2022251C (en) 1998-07-07
JP2900181B2 (ja) 1999-06-02
DE69016301T2 (de) 1995-05-24
DE69016301D1 (de) 1995-03-09
US4987311A (en) 1991-01-22

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