DE69016301T2 - Polarisierungsweise der Dioden eines Elektronendetektors zur Verbesserung des Schreibens in einem Elektronenstrahllithographiegerät. - Google Patents

Polarisierungsweise der Dioden eines Elektronendetektors zur Verbesserung des Schreibens in einem Elektronenstrahllithographiegerät.

Info

Publication number
DE69016301T2
DE69016301T2 DE69016301T DE69016301T DE69016301T2 DE 69016301 T2 DE69016301 T2 DE 69016301T2 DE 69016301 T DE69016301 T DE 69016301T DE 69016301 T DE69016301 T DE 69016301T DE 69016301 T2 DE69016301 T2 DE 69016301T2
Authority
DE
Germany
Prior art keywords
polarization
diodes
mode
beam lithography
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69016301T
Other languages
English (en)
Other versions
DE69016301D1 (de
Inventor
William J Devore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
ETEC CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23545687&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69016301(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by ETEC CORP filed Critical ETEC CORP
Publication of DE69016301D1 publication Critical patent/DE69016301D1/de
Application granted granted Critical
Publication of DE69016301T2 publication Critical patent/DE69016301T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2441—Semiconductor detectors, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2449—Detector devices with moving charges in electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24578—Spatial variables, e.g. position, distance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
DE69016301T 1989-08-08 1990-07-30 Polarisierungsweise der Dioden eines Elektronendetektors zur Verbesserung des Schreibens in einem Elektronenstrahllithographiegerät. Expired - Fee Related DE69016301T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/391,202 US4987311A (en) 1989-08-08 1989-08-08 Electron-detector diode biassing scheme for improved writing by an electron beam lithography machine

Publications (2)

Publication Number Publication Date
DE69016301D1 DE69016301D1 (de) 1995-03-09
DE69016301T2 true DE69016301T2 (de) 1995-05-24

Family

ID=23545687

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69016301T Expired - Fee Related DE69016301T2 (de) 1989-08-08 1990-07-30 Polarisierungsweise der Dioden eines Elektronendetektors zur Verbesserung des Schreibens in einem Elektronenstrahllithographiegerät.

Country Status (6)

Country Link
US (1) US4987311A (de)
EP (1) EP0412393B1 (de)
JP (1) JP2900181B2 (de)
KR (1) KR0137937B1 (de)
CA (1) CA2022251C (de)
DE (1) DE69016301T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3938660A1 (de) * 1989-11-21 1991-05-23 Integrated Circuit Testing Korpuskularstrahlgeraet
JPH0775156B2 (ja) * 1992-03-06 1995-08-09 ▲巌▼ 大泊 イオン照射装置及び方法
US5789748A (en) * 1997-05-29 1998-08-04 Stanford University Low voltage electron beam system
JP2002543607A (ja) * 1999-05-03 2002-12-17 イーテック・システムズ・インコーポレイテッド 複数の荷電粒子ビームの較正及びシールド荷電粒子リソグラフィーのための微細加工テンプレート

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6014737A (ja) * 1983-07-06 1985-01-25 Jeol Ltd 反射電子検出装置
JPH0619971B2 (ja) * 1984-11-27 1994-03-16 株式会社島津製作所 走査電子顕微鏡
US4680468A (en) * 1985-08-05 1987-07-14 Canadian Patents And Development Limited-Societe Canadienne Des Brevets Et D'exploitation Limitee Particle detector

Also Published As

Publication number Publication date
JP2900181B2 (ja) 1999-06-02
KR0137937B1 (ko) 1998-04-27
CA2022251A1 (en) 1991-02-09
EP0412393B1 (de) 1995-01-25
DE69016301D1 (de) 1995-03-09
JPH0472613A (ja) 1992-03-06
EP0412393A3 (en) 1991-05-08
KR910005370A (ko) 1991-03-30
EP0412393A2 (de) 1991-02-13
CA2022251C (en) 1998-07-07
US4987311A (en) 1991-01-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: APPLIED MATERIALS, INC. (N.D.GES.D. STAATES DELAWA

8339 Ceased/non-payment of the annual fee