DE69209865D1 - Vorrichtung zur Messung eines Ionenstrahlpotentials - Google Patents

Vorrichtung zur Messung eines Ionenstrahlpotentials

Info

Publication number
DE69209865D1
DE69209865D1 DE69209865T DE69209865T DE69209865D1 DE 69209865 D1 DE69209865 D1 DE 69209865D1 DE 69209865 T DE69209865 T DE 69209865T DE 69209865 T DE69209865 T DE 69209865T DE 69209865 D1 DE69209865 D1 DE 69209865D1
Authority
DE
Germany
Prior art keywords
measuring
ion beam
beam potential
potential
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69209865T
Other languages
English (en)
Other versions
DE69209865T2 (de
Inventor
Piero Sferlazzo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Application granted granted Critical
Publication of DE69209865D1 publication Critical patent/DE69209865D1/de
Publication of DE69209865T2 publication Critical patent/DE69209865T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24455—Transmitted particle detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2449—Detector devices with moving charges in electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24571—Measurements of non-electric or non-magnetic variables
    • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature

Landscapes

  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69209865T 1991-01-29 1992-01-16 Vorrichtung zur Messung eines Ionenstrahlpotentials Expired - Fee Related DE69209865T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/647,509 US5113074A (en) 1991-01-29 1991-01-29 Ion beam potential detection probe

Publications (2)

Publication Number Publication Date
DE69209865D1 true DE69209865D1 (de) 1996-05-23
DE69209865T2 DE69209865T2 (de) 1996-11-28

Family

ID=24597258

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69209865T Expired - Fee Related DE69209865T2 (de) 1991-01-29 1992-01-16 Vorrichtung zur Messung eines Ionenstrahlpotentials

Country Status (5)

Country Link
US (1) US5113074A (de)
EP (1) EP0499357B1 (de)
JP (1) JP3125233B2 (de)
KR (1) KR0133320B1 (de)
DE (1) DE69209865T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5384465A (en) * 1993-09-17 1995-01-24 Applied Materials, Inc. Spectrum analyzer in an ion implanter
US5449920A (en) * 1994-04-20 1995-09-12 Northeastern University Large area ion implantation process and apparatus
GB2314202B (en) * 1996-06-14 2000-08-09 Applied Materials Inc Ion implantation apparatus and a method of monitoring high energy neutral contamination in an ion implantation process
US6271529B1 (en) 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization
US6722022B2 (en) * 2002-05-07 2004-04-20 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus for calibrating the position of a wafer platform in an ion implanter
JPWO2004081966A1 (ja) * 2003-03-14 2006-06-15 松下電器産業株式会社 ビーム電流測定装置およびこれを用いたビーム電流測定方法
US6828572B2 (en) * 2003-04-01 2004-12-07 Axcelis Technologies, Inc. Ion beam incident angle detector for ion implant systems
US7157718B2 (en) * 2004-04-30 2007-01-02 The Regents Of The University Of Michigan Microfabricated radiation detector assemblies methods of making and using same and interface circuit for use therewith
US7170067B2 (en) * 2005-02-16 2007-01-30 Varian Semiconductor Equipment Associates, Inc. Ion beam measurement apparatus and method
KR100782370B1 (ko) * 2006-08-04 2007-12-07 삼성전자주식회사 지연 전기장을 이용한 이온 에너지 분포 분석기에 근거한이온 분석 시스템
WO2008021501A2 (en) * 2006-08-18 2008-02-21 Piero Sferlazzo Apparatus and method for ultra-shallow implantation in a semiconductor device
US9275833B2 (en) 2012-02-03 2016-03-01 Seagate Technology Llc Methods of forming layers
WO2013116594A1 (en) * 2012-02-03 2013-08-08 Seagate Technology Llc Methods of forming layers
US9280989B2 (en) 2013-06-21 2016-03-08 Seagate Technology Llc Magnetic devices including near field transducer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4118630A (en) * 1977-05-05 1978-10-03 International Business Machines Corporation Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface
US4135097A (en) * 1977-05-05 1979-01-16 International Business Machines Corporation Ion implantation apparatus for controlling the surface potential of a target surface
US4249077A (en) * 1978-08-04 1981-02-03 Crawford Charles K Ion charge neutralization for electron beam devices
DE3025550A1 (de) * 1979-07-26 1981-02-12 Balzers Hochvakuum Einrichtung zur messung des auf eine messflaeche im vakuum einfallenden ionenstromes
US4361762A (en) * 1980-07-30 1982-11-30 Rca Corporation Apparatus and method for neutralizing the beam in an ion implanter
US4463255A (en) * 1980-09-24 1984-07-31 Varian Associates, Inc. Apparatus for enhanced neutralization of positively charged ion beam
US4595837A (en) * 1983-09-16 1986-06-17 Rca Corporation Method for preventing arcing in a device during ion-implantation
US4687987A (en) * 1984-09-28 1987-08-18 The United States Of America As Represented By The United States Department Of Energy Beam current sensor
JPS62103951A (ja) * 1985-10-29 1987-05-14 Toshiba Corp イオン注入装置
JPH0191431A (ja) * 1987-04-16 1989-04-11 Sumitomo Eaton Noba Kk イオン打ち込み装置におけるウエハ帯電量検知装置
JPH0740476B2 (ja) * 1987-05-15 1995-05-01 富士通株式会社 荷電ビ−ム電流測定機構
JPH0256842A (ja) * 1988-08-23 1990-02-26 Nec Corp イオン注入装置
US4994674A (en) * 1989-05-09 1991-02-19 Sumitomo Eaton Nova Corporation Ion implantation apparatus capable of avoiding electrification of a substrate

Also Published As

Publication number Publication date
EP0499357A2 (de) 1992-08-19
EP0499357B1 (de) 1996-04-17
KR0133320B1 (ko) 1998-04-16
KR920015490A (ko) 1992-08-27
DE69209865T2 (de) 1996-11-28
EP0499357A3 (en) 1992-08-26
US5113074A (en) 1992-05-12
JPH0582071A (ja) 1993-04-02
JP3125233B2 (ja) 2001-01-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AXCELIS TECHNOLOGIES, INC., BEVERLY, MASS., US

8339 Ceased/non-payment of the annual fee