KR900017170A - 반도체 기억장치 - Google Patents
반도체 기억장치 Download PDFInfo
- Publication number
- KR900017170A KR900017170A KR1019890004798A KR890004798A KR900017170A KR 900017170 A KR900017170 A KR 900017170A KR 1019890004798 A KR1019890004798 A KR 1019890004798A KR 890004798 A KR890004798 A KR 890004798A KR 900017170 A KR900017170 A KR 900017170A
- Authority
- KR
- South Korea
- Prior art keywords
- signal
- electric
- electrical
- selection
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 230000001360 synchronised effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9412288 | 1988-04-15 | ||
| JP63-94122 | 1988-04-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR900017170A true KR900017170A (ko) | 1990-11-15 |
Family
ID=14101620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890004798A Abandoned KR900017170A (ko) | 1988-04-15 | 1989-04-12 | 반도체 기억장치 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR900017170A (enrdf_load_stackoverflow) |
| FR (1) | FR2630246A1 (enrdf_load_stackoverflow) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4337525A (en) * | 1979-04-17 | 1982-06-29 | Nippon Electric Co., Ltd. | Asynchronous circuit responsive to changes in logic level |
| JP2518810B2 (ja) * | 1983-11-29 | 1996-07-31 | 富士通株式会社 | 半導体集積回路装置 |
| JPS61267991A (ja) * | 1985-05-22 | 1986-11-27 | Mitsubishi Electric Corp | 半導体記憶装置 |
-
1989
- 1989-04-06 FR FR8904519A patent/FR2630246A1/fr active Granted
- 1989-04-12 KR KR1019890004798A patent/KR900017170A/ko not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| FR2630246B1 (enrdf_load_stackoverflow) | 1994-08-19 |
| FR2630246A1 (fr) | 1989-10-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR940007884A (ko) | 반도체 장치 | |
| KR850000125A (ko) | Mos 기억장치 | |
| TW329529B (en) | The pre-charging circuit for semiconductor memory device | |
| KR970017627A (ko) | 멀티 뱅크 구조의 반도체 메모리 장치 | |
| KR910003662A (ko) | 다이나믹 랜덤 액세스 메모리와 그 데이터기록방법 | |
| KR910001771A (ko) | 반도체 메모리 장치 | |
| KR970017616A (ko) | 고속액세스를 위한 데이타 출력패스를 구비하는 반도체 메모리장치 | |
| KR870006622A (ko) | 반도체 기억장치 | |
| KR950010084A (ko) | 반도체 메모리 장치 | |
| KR900017170A (ko) | 반도체 기억장치 | |
| KR970012694A (ko) | 고속 판독 반도체 메모리 | |
| KR920022300A (ko) | 개선된 라이트 동작을 가지는 반도체 메모리 장치 | |
| KR950020127A (ko) | 반도체 기억 회로 제어 방법 | |
| KR930022384A (ko) | 반도체 기억 장치 | |
| KR930001230A (ko) | 반도체 기억장치 및 반도체 집적회로 장치 | |
| KR960039000A (ko) | 기입 사이클 시간을 감소시키기 위해 펄스 발생기를 갖는 반도체 스태틱 메모리 장치 | |
| KR940010099A (ko) | 비트라인 센싱회로 | |
| KR960038975A (ko) | 확장 데이타 출력모드를 가진 반도체 메모리장치 | |
| KR970012722A (ko) | 반도체 메모리장치의 데이타 출력회로 및 방법 | |
| KR970012709A (ko) | 블록 기록 시스템을 이용하는 반도체 메모리 | |
| KR0144255B1 (ko) | 디램의 컬럼 스타트 제어회로 | |
| KR970017622A (ko) | 멀티 뱅크 구조를 갖는 반도체 메모리 장치 | |
| KR970017637A (ko) | 반도체 메모리장치의 센스앰프 제어회로 | |
| KR940026964A (ko) | 반도체 메모리 장치 | |
| KR970017639A (ko) | 비트라인 센싱제어회로 및 그 제어방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19890412 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 19940124 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 19890412 Comment text: Patent Application |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 19971128 |
|
| NORF | Unpaid initial registration fee | ||
| PC1904 | Unpaid initial registration fee |