KR900008666B1 - 반도체 집적회로로 구성된 회로 배열 - Google Patents

반도체 집적회로로 구성된 회로 배열 Download PDF

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Publication number
KR900008666B1
KR900008666B1 KR8202343A KR820002343A KR900008666B1 KR 900008666 B1 KR900008666 B1 KR 900008666B1 KR 8202343 A KR8202343 A KR 8202343A KR 820002343 A KR820002343 A KR 820002343A KR 900008666 B1 KR900008666 B1 KR 900008666B1
Authority
KR
South Korea
Prior art keywords
lead
circuit
connection
semiconductor integrated
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8202343A
Other languages
English (en)
Korean (ko)
Inventor
하인리히 코지크 코드
Original Assignee
디. 제이. 삭커스
엔. 브이. 필립스 글코아이람펜 파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 디. 제이. 삭커스, 엔. 브이. 필립스 글코아이람펜 파브리켄 filed Critical 디. 제이. 삭커스
Application granted granted Critical
Publication of KR900008666B1 publication Critical patent/KR900008666B1/ko
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/601—Capacitive arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Structure Of Printed Boards (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Networks Using Active Elements (AREA)
KR8202343A 1981-05-30 1982-05-27 반도체 집적회로로 구성된 회로 배열 Expired KR900008666B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3121671 1981-05-30
DE19813121671 DE3121671A1 (de) 1981-05-30 1981-05-30 "schaltungsanordnung mit einer integrierten halbleiterschaltung"

Publications (1)

Publication Number Publication Date
KR900008666B1 true KR900008666B1 (ko) 1990-11-26

Family

ID=6133641

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8202343A Expired KR900008666B1 (ko) 1981-05-30 1982-05-27 반도체 집적회로로 구성된 회로 배열

Country Status (7)

Country Link
US (1) US4482820A (https=)
EP (1) EP0066334B1 (https=)
JP (1) JPS57207358A (https=)
KR (1) KR900008666B1 (https=)
CA (1) CA1183279A (https=)
DE (2) DE3121671A1 (https=)
ES (1) ES512615A0 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030152A (ja) * 1983-07-28 1985-02-15 Toshiba Corp 集積回路
JPS6090910U (ja) * 1983-11-25 1985-06-21 ソニー株式会社 発振器
US4609834A (en) * 1984-12-24 1986-09-02 Burroughs Corporation Integrated logic circuit incorporating a module which generates a control signal that cancels switching noise
JP2519703B2 (ja) * 1987-02-04 1996-07-31 株式会社東芝 発振回路
JP2553028Y2 (ja) * 1989-07-04 1997-11-05 ソニー株式会社 発振装置
JP2980142B2 (ja) * 1992-12-10 1999-11-22 富士通株式会社 半導体容量素子およびこれを用いた回路
DE69637117T2 (de) * 1995-03-13 2008-02-07 Koninklijke Philips Electronics N.V. Elektronische anordnung mit mitteln zum kompensieren von parasitären kapazitäten
US6046647A (en) * 1998-12-08 2000-04-04 Lucent Technologies Inc. Voltage-controlled oscillator

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1107295C2 (de) * 1960-11-02 1962-01-04 Telefunken Patent Halbleiteranordnung
DE1766558A1 (de) * 1968-02-20 1971-08-05 Alps Electric Co Ltd Neutralisierungskreis
US3560866A (en) * 1968-08-20 1971-02-02 Sprague Electric Co If amplifier with compensated transistor unit
DE1930321A1 (de) * 1969-06-14 1970-12-17 Licentia Gmbh Schaltung zur Neutralisation eines als aktives Halbleiterelement ausgebildeten elektronischen Signalschalters
GB1241285A (en) * 1970-02-02 1971-08-04 Mullard Ltd Improvements relating to neutralised transistor amplifiers
CA1007308A (en) * 1972-12-29 1977-03-22 Jack A. Dorler Cross-coupled capacitor for ac performance tuning
US4023053A (en) * 1974-12-16 1977-05-10 Tokyo Shibaura Electric Co., Ltd. Variable capacity diode device

Also Published As

Publication number Publication date
DE3121671A1 (de) 1982-12-16
DE3270070D1 (en) 1986-04-30
CA1183279A (en) 1985-02-26
JPH024145B2 (https=) 1990-01-26
ES8304365A1 (es) 1983-02-16
JPS57207358A (en) 1982-12-20
US4482820A (en) 1984-11-13
ES512615A0 (es) 1983-02-16
EP0066334B1 (de) 1986-03-26
EP0066334A1 (de) 1982-12-08

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