KR900005842B1 - 질화 알루미늄 기판 - Google Patents

질화 알루미늄 기판 Download PDF

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Publication number
KR900005842B1
KR900005842B1 KR1019870001436A KR870001436A KR900005842B1 KR 900005842 B1 KR900005842 B1 KR 900005842B1 KR 1019870001436 A KR1019870001436 A KR 1019870001436A KR 870001436 A KR870001436 A KR 870001436A KR 900005842 B1 KR900005842 B1 KR 900005842B1
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KR
South Korea
Prior art keywords
aluminum nitride
metallization layer
nitride substrate
conductive
protective layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870001436A
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English (en)
Korean (ko)
Other versions
KR870008054A (ko
Inventor
또 히데끼 사
노부유끼 미즈노야
미쓰히로 나가따
Original Assignee
가부시끼가이샤 도시바
아오이 죠이찌
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Publication of KR870008054A publication Critical patent/KR870008054A/ko
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Publication of KR900005842B1 publication Critical patent/KR900005842B1/ko
Expired legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/90—Electrical properties
    • C04B2111/94—Electrically conducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12049—Nonmetal component
    • Y10T428/12056—Entirely inorganic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
    • Y10T428/12063—Nonparticulate metal component
    • Y10T428/12069—Plural nonparticulate metal components
    • Y10T428/12076—Next to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Products (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
KR1019870001436A 1986-02-20 1987-02-20 질화 알루미늄 기판 Expired KR900005842B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61033829A JPS62197379A (ja) 1986-02-20 1986-02-20 窒化アルミニウム基板
JP33829 1986-02-20
JP61-33829 1986-02-20

Publications (2)

Publication Number Publication Date
KR870008054A KR870008054A (ko) 1987-09-24
KR900005842B1 true KR900005842B1 (ko) 1990-08-13

Family

ID=12397372

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870001436A Expired KR900005842B1 (ko) 1986-02-20 1987-02-20 질화 알루미늄 기판

Country Status (5)

Country Link
US (1) US4761345A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS62197379A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR900005842B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3705336C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2187205B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318648A (ja) * 1986-07-11 1988-01-26 Toshiba Corp 窒化アルミニウム回路基板
JPH0680873B2 (ja) * 1986-07-11 1994-10-12 株式会社東芝 回路基板
JPS64788A (en) * 1987-03-31 1989-01-05 Toshiba Corp Surface conductive ceramic substrate and manufacture of the same and metallizing compound for the same
CA1284536C (en) * 1987-07-03 1991-05-28 Akira Sasame Member for semiconductor apparatus
CA1308494C (en) * 1987-07-03 1992-10-06 Sumitomo Electric Industries, Ltd. Connection structure between components for semiconductor apparatus
JP2544398B2 (ja) * 1987-08-27 1996-10-16 富士通株式会社 Ａ１ｎセラミックスのメタライズ方法
US5264388A (en) * 1988-05-16 1993-11-23 Sumitomo Electric Industries, Inc. Sintered body of aluminum nitride
US5258218A (en) * 1988-09-13 1993-11-02 Kabushiki Kaisha Toshiba Aluminum nitride substrate and method for producing same
JP2572823B2 (ja) * 1988-09-22 1997-01-16 日本碍子株式会社 セラミック接合体
JPH02263445A (ja) * 1988-12-23 1990-10-26 Toshiba Corp 窒化アルミニウム基板およびそれを用いた半導体装置
DE69007409T2 (de) * 1989-09-27 1994-07-28 Toshiba Kawasaki Kk Leiterplatte aus Aluminiumnitrid.
JP2734170B2 (ja) * 1990-05-09 1998-03-30 株式会社村田製作所 窒化アルミニウム多層基板の配線用ペースト
US5775403A (en) * 1991-04-08 1998-07-07 Aluminum Company Of America Incorporating partially sintered preforms in metal matrix composites
US5570502A (en) * 1991-04-08 1996-11-05 Aluminum Company Of America Fabricating metal matrix composites containing electrical insulators
US5616421A (en) * 1991-04-08 1997-04-01 Aluminum Company Of America Metal matrix composites containing electrical insulators
US5217589A (en) * 1991-10-03 1993-06-08 Motorola, Inc. Method of adherent metal coating for aluminum nitride surfaces
US5270263A (en) * 1991-12-20 1993-12-14 Micron Technology, Inc. Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering
US5311399A (en) * 1992-06-24 1994-05-10 The Carborundum Company High power ceramic microelectronic package
US5336928A (en) * 1992-09-18 1994-08-09 General Electric Company Hermetically sealed packaged electronic system
US5626943A (en) * 1994-06-02 1997-05-06 The Carborundum Company Ultra-smooth ceramic substrates and magnetic data storage media prepared therefrom
US6090701A (en) * 1994-06-21 2000-07-18 Kabushiki Kaisha Toshiba Method for production of semiconductor device
JP3575068B2 (ja) * 1994-08-02 2004-10-06 住友電気工業株式会社 平滑なめっき層を有するセラミックスメタライズ基板およびその製造方法
JP2002160974A (ja) * 2000-11-22 2002-06-04 Ibiden Co Ltd 窒化アルミニウム焼結体、窒化アルミニウム焼結体の製造方法、セラミック基板およびセラミック基板の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57181356A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Sintered aluminum nitride body with high heat conductivity
JPS58101442A (ja) * 1981-12-11 1983-06-16 Hitachi Ltd 電気的装置用基板
US4570328A (en) * 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
JPS6077186A (ja) * 1983-09-30 1985-05-01 株式会社東芝 金属化表面を有するセラミツクス焼結体
EP0153737B1 (en) * 1984-02-27 1993-07-28 Kabushiki Kaisha Toshiba Circuit substrate having high thermal conductivity
NL8400675A (nl) * 1984-03-02 1984-10-01 Philips Nv Master geschikt voor de vervaardiging van galvanische afdrukken.
US4656101A (en) * 1984-11-07 1987-04-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device with a protective film
JPS61291480A (ja) * 1985-06-17 1986-12-22 日本特殊陶業株式会社 窒化アルミニウム製基材の表面処理組成物

Also Published As

Publication number Publication date
KR870008054A (ko) 1987-09-24
GB8703742D0 (en) 1987-03-25
US4761345A (en) 1988-08-02
DE3705336A1 (de) 1987-08-27
GB2187205A (en) 1987-09-03
JPH0516398B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-03-04
GB2187205B (en) 1990-01-24
DE3705336C2 (de) 1994-10-20
JPS62197379A (ja) 1987-09-01

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