KR900005550A - 급속열처리 가능한 Si계 박막증착용 특수 광화학반응로 - Google Patents
급속열처리 가능한 Si계 박막증착용 특수 광화학반응로 Download PDFInfo
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- KR900005550A KR900005550A KR1019880011867A KR880011867A KR900005550A KR 900005550 A KR900005550 A KR 900005550A KR 1019880011867 A KR1019880011867 A KR 1019880011867A KR 880011867 A KR880011867 A KR 880011867A KR 900005550 A KR900005550 A KR 900005550A
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- thin film
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- gas
- deposition
- film deposition
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
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- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 광화학 반응로의 구조를 도시한 측면 및 평면 단면도.
제3도는 개스 분리창의 평면도.
Claims (5)
- 고집적 IC의 공정중 각종 박막을 증착시키는 광화학 증착장치에 있어서, 자외선 광원은 선형 저압 수은등을 사용하고, 입사창은 특수 석영 유리로 사용하였으며, 반사경은 알루미늄 거울로 사용하며, 분사 각도에 따라 노즐(nozzle)을 교환할 수 있고, 높이 조절이 가능한 횡방향 분사식 반응개스 분사기 구조를 갖는 것을 특징으로하는 급속열처리 가능한 Si계 박막 증착용 특수 광화학 반응로.
- 제1항에 있어서, 분사각도 조절은 반응개스의 분사구를 증착면보다 약간 높게하여 흘려줌으로써 증착량의 차이가 개선되거나, 개스압과 개스유속, 개스조성비 및 증착면 온도등의 공정조건과 분사구의 크기, 높이 및 분사각에 따라 조절되도록 한 것을 특징으로하는 급속열처리 가능한 Si계 박막 증착용 특수 광화학반응로.
- 제1항에 있어서, 입사창(112)의 박막증착은 입사창(112)밑에 개스 분리창(110)을 설치하고, 또 다른 분사기(111)로 부터 중성개스를 불어 넣어 반응개스가 위로 확산되지 않도록 한것을 특징으로하는 금속열처리 가능한 Si계 박막증착용 특수 광화학 반응로.
- 제3항에 있어서, 개스 분리창(110)은 균일하게 개스를 분사하도록 구멍을 뚫었고, 재질은 특수 석영 유리로 한 것을 특징으로하는 급속열처리 가능한 Si계 박막증착용 특수 광화학 반응로.
- 웨이퍼 가열장치는 저온 반응로에 적합하도록 IR등(115)에 의한 IR가열장치로 제작하고, 웨이퍼 지지기(101) 및 IR투과창(102)은 석영유리로 하여 상기 IR등(115)으로부터 복사되는 IR광이 잘 투과하고, 열전달이 잘 일어나지 않도록 하며, IR등(115)의 복사광을 효율적으로 이용하기 위해 IR등(115)아래에 IR반사경(116)을 설치하여 IR광이 웨이퍼에 많이 전달되도록 한 것을 특징으로하는 급속 열처리 가능한 Si계 박막증착용 특수 광화학 반응로.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019880011867A KR930001193B1 (ko) | 1988-09-14 | 1988-09-14 | 급속열처리 가능한 Si계 박막증착용 특수 광화학 반응로 |
Applications Claiming Priority (1)
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KR1019880011867A KR930001193B1 (ko) | 1988-09-14 | 1988-09-14 | 급속열처리 가능한 Si계 박막증착용 특수 광화학 반응로 |
Publications (2)
Publication Number | Publication Date |
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KR900005550A true KR900005550A (ko) | 1990-04-14 |
KR930001193B1 KR930001193B1 (ko) | 1993-02-20 |
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KR1019880011867A KR930001193B1 (ko) | 1988-09-14 | 1988-09-14 | 급속열처리 가능한 Si계 박막증착용 특수 광화학 반응로 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100543711B1 (ko) * | 2004-06-19 | 2006-01-20 | 삼성전자주식회사 | 열처리장치 |
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1988
- 1988-09-14 KR KR1019880011867A patent/KR930001193B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100543711B1 (ko) * | 2004-06-19 | 2006-01-20 | 삼성전자주식회사 | 열처리장치 |
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KR930001193B1 (ko) | 1993-02-20 |
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