KR900004084B1 - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
KR900004084B1
KR900004084B1 KR8705405A KR870005405A KR900004084B1 KR 900004084 B1 KR900004084 B1 KR 900004084B1 KR 8705405 A KR8705405 A KR 8705405A KR 870005405 A KR870005405 A KR 870005405A KR 900004084 B1 KR900004084 B1 KR 900004084B1
Authority
KR
South Korea
Prior art keywords
layer
acid
resisting
manufacture
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8705405A
Other languages
English (en)
Korean (ko)
Inventor
Masakasu Kakumu
Sigeru Morida
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of KR900004084B1 publication Critical patent/KR900004084B1/ko
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/012—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS]
    • H10W10/0125—Manufacture or treatment of isolation regions comprising dielectric materials using local oxidation of silicon [LOCOS] comprising introducing electrical impurities in local oxidation regions, e.g. to alter LOCOS oxide growth characteristics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/13—Isolation regions comprising dielectric materials formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation [SILO] or side-wall mask isolation [SWAMI]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
KR8705405A 1986-05-31 1987-05-29 Manufacture of semiconductor device Expired KR900004084B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61126348A JPS62282446A (ja) 1986-05-31 1986-05-31 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR900004084B1 true KR900004084B1 (en) 1990-06-11

Family

ID=14932945

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8705405A Expired KR900004084B1 (en) 1986-05-31 1987-05-29 Manufacture of semiconductor device

Country Status (3)

Country Link
US (1) US4721687A (https=)
JP (1) JPS62282446A (https=)
KR (1) KR900004084B1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0482829A1 (en) * 1990-10-26 1992-04-29 AT&T Corp. Method for forming a composite oxide over a heavily doped region
JPH04335529A (ja) * 1991-05-10 1992-11-24 Sony Corp 半導体装置の製造方法
KR960005556B1 (ko) * 1993-04-24 1996-04-26 삼성전자주식회사 반도체장치의 소자분리방법
US5756385A (en) * 1994-03-30 1998-05-26 Sandisk Corporation Dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5661053A (en) * 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5728622A (en) * 1996-03-18 1998-03-17 Winbond Electronics Corporation Process for forming field oxide layers in semiconductor devices
US6096660A (en) * 1997-08-21 2000-08-01 Micron Technology, Inc. Method for removing undesirable second oxide while minimally affecting a desirable first oxide
US6063690A (en) * 1997-12-29 2000-05-16 Utmc Microelectronics Systems Inc. Method for making recessed field oxide for radiation hardened microelectronics
US7867871B1 (en) * 2006-07-13 2011-01-11 National Semiconductor Corporation System and method for increasing breakdown voltage of LOCOS isolated devices
CN108258051A (zh) * 2018-01-11 2018-07-06 上海华虹宏力半导体制造有限公司 Ldmos器件及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4407696A (en) * 1982-12-27 1983-10-04 Mostek Corporation Fabrication of isolation oxidation for MOS circuit
US4539744A (en) * 1984-02-03 1985-09-10 Fairchild Camera & Instrument Corporation Semiconductor planarization process and structures made thereby
US4612701A (en) * 1984-03-12 1986-09-23 Harris Corporation Method to reduce the height of the bird's head in oxide isolated processes
US4594769A (en) * 1984-06-15 1986-06-17 Signetics Corporation Method of forming insulator of selectively varying thickness on patterned conductive layer

Also Published As

Publication number Publication date
JPH0434305B2 (https=) 1992-06-05
JPS62282446A (ja) 1987-12-08
US4721687A (en) 1988-01-26

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