KR890700268A - 도전성 플러그로 집적회로상의 접점 및 비아를 충전하는 방법 - Google Patents
도전성 플러그로 집적회로상의 접점 및 비아를 충전하는 방법Info
- Publication number
- KR890700268A KR890700268A KR1019880701007A KR880701007A KR890700268A KR 890700268 A KR890700268 A KR 890700268A KR 1019880701007 A KR1019880701007 A KR 1019880701007A KR 880701007 A KR880701007 A KR 880701007A KR 890700268 A KR890700268 A KR 890700268A
- Authority
- KR
- South Korea
- Prior art keywords
- vias
- integrated circuits
- conductive plugs
- charging contacts
- charging
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94464186A | 1986-12-19 | 1986-12-19 | |
US944,641 | 1986-12-19 | ||
PCT/US1987/002767 WO1988004831A1 (en) | 1986-12-19 | 1987-10-23 | Conductive plug for contacts and vias on integrated circuits |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890700268A true KR890700268A (ko) | 1989-03-10 |
KR910006975B1 KR910006975B1 (ko) | 1991-09-14 |
Family
ID=25481791
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880701007A KR910006975B1 (ko) | 1986-12-19 | 1987-10-23 | 도전성 플러그로 집적 회로 상의 접점 및 비아를 충전하는 방법 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0298110A1 (ko) |
JP (1) | JPH01501588A (ko) |
KR (1) | KR910006975B1 (ko) |
WO (1) | WO1988004831A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4961822A (en) * | 1989-04-17 | 1990-10-09 | Liao Kuan Y | Fully recessed interconnection scheme with titanium-tungsten and selective CVD tungsten |
JP2822208B2 (ja) * | 1989-05-23 | 1998-11-11 | ソニー株式会社 | 半導体装置の製造方法 |
JPH0382126A (ja) * | 1989-08-25 | 1991-04-08 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US4987099A (en) * | 1989-12-29 | 1991-01-22 | North American Philips Corp. | Method for selectively filling contacts or vias or various depths with CVD tungsten |
US5387550A (en) * | 1992-02-07 | 1995-02-07 | Micron Technology, Inc. | Method for making a fillet for integrated circuit metal plug |
JP3014019B2 (ja) * | 1993-11-26 | 2000-02-28 | 日本電気株式会社 | 半導体装置の製造方法 |
JPH09321137A (ja) * | 1996-05-24 | 1997-12-12 | Nec Corp | 半導体装置およびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59154040A (ja) * | 1983-02-22 | 1984-09-03 | Toshiba Corp | 半導体装置の製造方法 |
FR2566181B1 (fr) * | 1984-06-14 | 1986-08-22 | Commissariat Energie Atomique | Procede d'autopositionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre |
DE3665961D1 (en) * | 1985-07-29 | 1989-11-02 | Siemens Ag | Process for selectively filling contact holes made by etching in insulating layers with electrically conductive materials for the manufacture of high-density integrated semiconductor circuits, and apparatus used for this process |
-
1987
- 1987-10-23 JP JP63501394A patent/JPH01501588A/ja active Pending
- 1987-10-23 WO PCT/US1987/002767 patent/WO1988004831A1/en not_active Application Discontinuation
- 1987-10-23 EP EP88901167A patent/EP0298110A1/en not_active Withdrawn
- 1987-10-23 KR KR1019880701007A patent/KR910006975B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO1988004831A1 (en) | 1988-06-30 |
EP0298110A1 (en) | 1989-01-11 |
JPH01501588A (ja) | 1989-06-01 |
KR910006975B1 (ko) | 1991-09-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
NORF | Unpaid initial registration fee |