KR890013726A - LTO gradient etching method by ion implantation - Google Patents

LTO gradient etching method by ion implantation Download PDF

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Publication number
KR890013726A
KR890013726A KR1019880001481A KR880001481A KR890013726A KR 890013726 A KR890013726 A KR 890013726A KR 1019880001481 A KR1019880001481 A KR 1019880001481A KR 880001481 A KR880001481 A KR 880001481A KR 890013726 A KR890013726 A KR 890013726A
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KR
South Korea
Prior art keywords
lto
ion implantation
etching method
gradient etching
gradient
Prior art date
Application number
KR1019880001481A
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Korean (ko)
Other versions
KR910002810B1 (en
Inventor
박용
김흥식
강대관
Original Assignee
김지주
금성반도체 주식회사
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Priority to KR1019880001481A priority Critical patent/KR910002810B1/en
Publication of KR890013726A publication Critical patent/KR890013726A/en
Application granted granted Critical
Publication of KR910002810B1 publication Critical patent/KR910002810B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음.No content.

Description

이온 주입에 의한 LTO 경사 에칭 방법LTO gradient etching method by ion implantation

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 에칭 방법에 의한 상태도.1 is a state diagram by the etching method according to the present invention.

제3도는 본 발명에 따른 에칭 방법에 대한 공정 순서도.3 is a process flow diagram for an etching method according to the present invention.

Claims (1)

규소(Si)기판에 캐패시터 옥사이드를 기르는 공정을 거쳐 폴리실리콘을 도우핑하는 침전 공정과 LTO 침전 공정을 행한 다음, phos, As, Ar로 이루어진 이온 소스로 이온 주입 공정을 행하고, 포토 마스킹 작업으로 애칭할 패턴을 형싱시켜 7:1BHF를 이용하여 LTO가 경사지는 습식 에칭 공정을 행하며 건조 에칭 공정으로 포토레지스터를 제거하여 게이트 옥사이드를 형성하고, 폴리 실리콘과 실리 사이드를 침전하여 게이트에칭 하는 이온 주입에 의한 LTO경사 에칭 방법.After the process of growing the capacitor oxide on the silicon (Si) substrate, the doping process for doping polysilicon and the LTO precipitation process are performed, followed by ion implantation process with an ion source consisting of phos, As, Ar, and nicknamed as photomasking. The pattern is formed by performing a wet etching process in which the LTO is inclined by using a 7: 1BHF. The photoresist is removed by a dry etching process to form a gate oxide, and the polysilicon and silicide are precipitated and gate-etched by ion implantation. LTO gradient etching method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880001481A 1988-02-15 1988-02-15 Lto slope eching by ion injecting KR910002810B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880001481A KR910002810B1 (en) 1988-02-15 1988-02-15 Lto slope eching by ion injecting

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880001481A KR910002810B1 (en) 1988-02-15 1988-02-15 Lto slope eching by ion injecting

Publications (2)

Publication Number Publication Date
KR890013726A true KR890013726A (en) 1989-09-25
KR910002810B1 KR910002810B1 (en) 1991-05-04

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ID=19272206

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880001481A KR910002810B1 (en) 1988-02-15 1988-02-15 Lto slope eching by ion injecting

Country Status (1)

Country Link
KR (1) KR910002810B1 (en)

Also Published As

Publication number Publication date
KR910002810B1 (en) 1991-05-04

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