KR910005480A - Manufacturing method of high voltage and low voltage CMOS transistor - Google Patents

Manufacturing method of high voltage and low voltage CMOS transistor Download PDF

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Publication number
KR910005480A
KR910005480A KR1019890012034A KR890012034A KR910005480A KR 910005480 A KR910005480 A KR 910005480A KR 1019890012034 A KR1019890012034 A KR 1019890012034A KR 890012034 A KR890012034 A KR 890012034A KR 910005480 A KR910005480 A KR 910005480A
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South Korea
Prior art keywords
oxide film
gate oxide
manufacturing
high voltage
low voltage
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KR1019890012034A
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Korean (ko)
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KR920001879B1 (en
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손해윤
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김광호
삼성전자 주식회사
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Priority to KR1019890012034A priority Critical patent/KR920001879B1/en
Publication of KR910005480A publication Critical patent/KR910005480A/en
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Publication of KR920001879B1 publication Critical patent/KR920001879B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음.No content.

Description

고압, 저압병용 시모스 트랜지스터의 제조방법Manufacturing method of high voltage and low voltage CMOS transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 발명의 실시예에 따른 고압, 저압병용 시모스 트랜지스터의 제조공정도.1 is a manufacturing process diagram of a high-pressure, low-voltage combined CMOS transistor according to an embodiment of the present invention.

Claims (1)

기판상에 필드 산화막을 형성한 후 1차게이트산화막을 형성시킨 후 2ck게이트산화막을 1차게이트산화막상에 성장시켜 고압소자의 게이트산화막이 2회에 걸쳐 형성되는 고압, 저압병용 시모스 트랜지스터의 제조방법에 있어서, 상기 필드 산화막(12)형성 후 게이트산화막(13)과 질화실리콘막(14)을 순차적으로 형성하고, 습식 및 건식 에칭을 하여 고압소자의 게이트산화막이 형성될 부위을 제외한 게이트산화막(13) 및 질화실리콘막(14)을 제거하고, 확산공정을 통하여 상기 게이트산화막(13)과 질화실리콘막(14)이 제거된 부위에 저압소자용 게이트산화막(16)을 형성하는 것을 특징으로 하는 고압, 저압병용 시모스 트랜지스터의 제조방법.After forming a field oxide film on a substrate, a primary gate oxide film is formed, and then a 2ck gate oxide film is grown on the primary gate oxide film, whereby a gate oxide film of a high voltage device is formed twice. In the method, after the field oxide film 12 is formed, the gate oxide film 13 and the silicon nitride film 14 are sequentially formed and wet and dry etched to remove the gate oxide film 13 except for the portion where the gate oxide film of the high voltage device is to be formed. And removing the silicon nitride film 14 and forming a low voltage device gate oxide film 16 at a portion where the gate oxide film 13 and the silicon nitride film 14 are removed through a diffusion process. A method of manufacturing a low voltage CMOS transistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890012034A 1989-08-23 1989-08-23 The method of manufacturing of cmos for high-low voltage KR920001879B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890012034A KR920001879B1 (en) 1989-08-23 1989-08-23 The method of manufacturing of cmos for high-low voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890012034A KR920001879B1 (en) 1989-08-23 1989-08-23 The method of manufacturing of cmos for high-low voltage

Publications (2)

Publication Number Publication Date
KR910005480A true KR910005480A (en) 1991-03-30
KR920001879B1 KR920001879B1 (en) 1992-03-06

Family

ID=19289185

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890012034A KR920001879B1 (en) 1989-08-23 1989-08-23 The method of manufacturing of cmos for high-low voltage

Country Status (1)

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KR (1) KR920001879B1 (en)

Also Published As

Publication number Publication date
KR920001879B1 (en) 1992-03-06

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